臺灣博碩士論文加值系統

　　本論文主要是利用基板轉移技術，配合雷射剝離技術（Laser lift-off；LLO）、乾/溼蝕刻技術（ICP-RIE、H3PO4）、雙面粗化（n-GaN、p-GaN）、高反射鏡面與高熱傳導基板，將其應用於藍光發光二極體，以無電極遮光的n-GaN layer朝上作為出光面，並且探討其元件光電特性及製程可行性。其中p-GaN是磊晶時利用低溫成長方式所產生的六角孔洞作為粗化結構，n-GaN則是在將磊晶膜轉換至結合高反射鏡面之高熱傳基板，雷射剝離將藍寶石基板移除之後，以氫氧化鈉溶液蝕刻成六角錐狀，並探討一般功率型發光二極體(45×45 mil2)在無電極遮光製程後對於光電效率之影響，以及對光取出效率的增益。
　　電特性方面，元件於基板的轉移過程並未造成電壓變化，隨操作電&;#63946;加大至 350 mA時，Original-SR-LED（單面粗化-SR、藍寶石基板）、p-side up-DR-LED（p-GaN面朝上、雙面粗化-DR、高熱傳導矽基板）、n-side up-DR-LED（n-GaN面朝上、雙面粗化-DR、高熱傳導矽基板）及n-side up-DR-VBLED（n-GaN面朝上、雙面粗化-DR、垂直導通高熱傳導矽基板）之順向偏壓分別為4.06 V、4.11 V、4.38 V與4.97 V; 在逆向偏壓方面，當在-5 V時，&;#63822;電&;#63946;分別為0.025 μA、0.025 μA 、0.023 μA與0.478 μA，前三結構特性幾乎&;#63847;變，維持 -5 V時&;#63822;電&;#63946;小於 2 μA的標準，此電特性結果顯示此製程研究之可&;#64008;性。光特性方面（光強度），未封膠的情況下，以電&;#63946; 700 mA注入，p-side up-DR-LED、n-side up-DR-LED與n-side up-DR-VBLED相較於Original-SR-LED分別提升119.83 %、158.74 %與26.64 %，研究結果以n-side up-DR-LED所提升效率為最佳，主要以雙面粗化結構為光強度主要提升原因。

Textured n-GaN side up LED with interdigitated imbedded electrodes (IIE) eliminating the electrode-shading loss with high reflection mirror on silicon substrate and double-side roughening both p-GaN and undoped-GaN layers have been investigated. The devices are subsequently fabricated with wafer-bond, laser lift-off and chemical dry/wet etching techniques. The roughness on p-GaN surface was fabricated via low temperature growth, and that on n-GaN surface was made by wet-etching. This n-GaN side up structure was useful to avoid light-absorbing and enhance the light efficiency. We compared the performance of 4-types LEDs: Original-LED/Sapphire with single rough surface(SR-LED), p-side up-LED with double rough surface(DR-LED), n-side up-DR-LED, n-side up-DR-VB(vertical electrodes by wafer bonding)LED. The forward voltage(at 350 mA) of 4-types LEDs is 4.06 V, 4.11 V, 4.38 V, 4.97 V respectively. The luminance intensity of the final 3-types LEDs(at 700 mA) is 119.83 %, 158.74 % and 26.64 % higher than that of the original LED, respectively. The performance of p-side up-DR-LED which is 119.83 % higher than that of original structure, yet worse than n-side up-DR-LED. It was worthy to mention that the area of electrode shading is only 13% of the light emitting area. Therefore, the obtained above results suggest that the optimum thin film LED structure is the n-GaN with double surface roughness and the high reflection mirror.

封面內頁
簽名頁
授權書
誌謝------------------------------------------------I
摘要------------------------------------------------II
Abstract--------------------------------------------III
第一章　緒論----------------------------------------1
1-1 前言---------------------------------------1
1-2 發光二極體之歷史回顧及發展-----------------1
1-3 研究背景與動機-----------------------------5
1-4 研究方向與架構-----------------------------20
第二章　發光二極體理論模型簡介----------------------22
2-1 光電特性----------------------------------------22
2-2 金屬與半導體接面之影響--------------------------24
2-2-1金屬/半導體接觸之原理--------------------------24
2-2-2 歐姆接觸之原理--------------------------------25
2-3 發光二極體之發光機制----------------------------27
2-4 熱效應對發光二極體之影響------------------------29
第三章　無電極遮蔽之發光二極體製作------------------38
3-1 前言--------------------------------------------38
3-2 元件製作----------------------------------------38
3-2-1 氮化鎵試片之磊晶結構--------------------------38
3-2-2 試片之清洗------------------------------------39
3-2-3 平台(Mesa)蝕刻--------------------------------39
3-2-4 透明導電層與電極之製作------------------------39
3-2-5 藍寶石基板之剝離------------------------------41
3-2-6 undoped-GaN 表面粗化-------------------------45
3-2-7 具鏡面之高熱傳導基板製作與晶片貼合技術--------45
3-2-8 以蝕刻技術製作n-GaN side up發光二極體之水平電極-47
3-3 元件切割、打線與封裝----------------------------47
3-4 量測元件特性------------------------------------47
3-4-1 光電特性量測----------------------------------47
3-4-2 原子力顯微鏡原理簡介--------------------------48
3-4-3 紅外熱像分析儀簡介----------------------------48
3-4-4 暫態熱阻量測系統簡介--------------------------49
第四章　實驗結果與討論------------------------------50
4-1 前言--------------------------------------------50
4-2 反射鏡面探討------------------------------------50
4-2-1 一般金屬鏡面----------------------------------50
4-2-2 全方位鏡面(Omni-Directional Reflector; ODR)---50
4-3 雷射剝離氮化鎵試片之分析------------------------50
4-3-1 雷射剝離氮化鎵試片之表面形貌分析--------------50
4-3-2 原子力顯微鏡對雷射剝離氮化鎵試片之分析--------52
4-4 n型氮化鎵磊晶層表面粗化之探討--------------53
4-5 低折射係數黏著層之選用特性----------------------55
4-6 元件特性分析------------------------------------56
4-7-1 元件形貌探討----------------------------------56
4-7-2元件之電極遮蔽率-------------------------------61
4-7-3 電流-電壓特性---------------------------------62
4-7-4 發光強度分析----------------------------------64
4-7-5表面溫度之量測---------------------------------66
第五章　結論與未來展望------------------------------67
5-1 結論--------------------------------------------67
5-2 未來展望----------------------------------------68
參考文獻--------------------------------------------69

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