臺灣博碩士論文加值系統

本篇論文主旨為提出一具有系統性的統計分析方式來針對90nm和65nm之金氧半場效電晶體裝置進行探討。主要研究目標為闡明分析出主要因素間之關聯及找出探討範圍內最佳且合乎臨界電壓要求的因素組合及其電性特性。研究主要進行方式為探索性因素分析，並使用新思科技之電腦輔助設計軟體設立電晶體結構。
研究結果包括：(1)提出一系統性的統計分析方式來探討金氧半場效電晶體變數間的關係。(2)研究流程中發現，當半導體尺寸縮小，臨界電壓也隨之變小。這會造成更難找到適當範圍的參數，因此研究中使用不同模型進行對照。(3)本研究對資料建立出因素分析分數，提供日後新變數一參照標準，在新舊資料間提供關聯性和概念。

In this thesis, a statistical optimization modeling is proposed to investigate the effect of the critical factors in the process of the 90nm and 65nm MOSFET devices. The electrical properties and correlation of the principal factors, are simulated based on exploratory factor analysis (EFA). From those results, optimization parameters are extracted to meet the requirements. TCAD SILVACO simulator was used to simulate electrical properties in the process of the 90nm and 65nm n-channel MOSFET structure.
Research results are concluded as follows. (1)A systematic method describing the statistical optimization of the electrical parameters for MOSFET device is demonstrated. (2) It is very hard to find the suitable parameters when the threshold voltage goes smaller as the device size decreases. Different models are required to verify the validness of the extracted data. (3) EFA history score has been established for future reference.

Abstract (in Chinese).....................................................................ii
Abstract (in English) ....................................................................iii
Acknowledgment..........................................................................iv
Table of Contents...........................................................................v
List of Figures..............................................................................vii
List of Tablesi................................................................................x
Chapter 1 INTRODUCTION..........................................................1
1-1 Introduction.............................................................................1
1-2 Motivation...............................................................................3
1-3 Outline of thesis.......................................................................4
Chapter 2 RESEARCH APPROACHES AND TOOLS....................5
2-1 Design of Research Procedures................................................5
2-2 Metal-Oxide-Semiconductor Field-Effect Transistor Physics...........................................................................................7
2-3 Factor Analysis Technique.....................................................10
2-4 Monte Carlo method...............................................................13
2-5 Silvaco TCAD software..........................................................14
Chapter 3 OPTIMIZATION IN FABRICATING 90nm MOSFET DEVICE........................................................................................16
3-1 MOSFET Processing...............................................................16
3-2 Compare of Different Structure Models..................................19
3-3 Optimization Analysis.............................................................21
3-3-1 Characteristic Discussion.....................................................21
3-2-2 Factor Analysis Scores.........................................................31
3-3-3 Extraction Electronic Parameters.........................................35
3-4 Summary and Results.............................................................38
Chapter 4 OPTIMIZATION IN FABRICATING 65nm MOSFET DEVICE.......................................................................................40
4-1 Comparison of Different Structure Models.............................40
4-2 Optimization Analysis............................................................44
4-2-1 Characteristic Discussion....................................................44
4-2-2 Factor Analysis Scores........................................................50
4-2-3 Extraction Electronic Parameters.........................................52
4-3 Summary and Results.............................................................53
Chapter 5 CONCLUSION AND PROSPECT................................55
5-1 Conclusion.............................................................................55
5-2 Prospect..................................................................................56
REFERENCES..............................................................................57
APPENDIX I The 65nm MOSFET factor scores of the optimized parameters using the Monte Carlo model..................................................................................60

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