臺灣博碩士論文加值系統

本研究於電阻膏中添加氧化鋁顆粒，以網版印刷的方式，將不同氧化鋁含量之電阻膏塗佈於有經氧化與沒有經氧化預處理的氮化鋁基板上，探討在不同氧化鋁添加量的場合，電阻層於燒成後之氣孔分布、界面微結構、及對界面拉伸破壞強度的影響。
隨氧化鋁添加量的增加，在850℃燒成後之電阻層的強度隨之遞減。由於氮化鋁基板易被電阻膏中所含的玻璃相氧化而產生反應氣體，未能及時逸出至表面的氣體，會以氣孔方式，殘留在基板與電阻層的界面。對含相同氧化鋁添加量的電阻膏而言，其燒成後之界面微結構隨基板表面氧化層的有無而改變。當電阻膏塗佈於As-received氮化鋁基板時，隨氧化鋁添加量增加，氣孔殘留界面的情形顯著改善，但其拉伸破壞強度卻隨氧化鋁添加量的上升而急遽下降。
預氧化處理的氮化鋁基板雖可避免氮化鋁晶粒被塗料之玻璃相氧化而產生的殘留氣孔，厚膜-基板界面的拉伸破壞強度卻與電阻膏的氧化鋁添加量無明顯關係。因氧化鋁與氮化鋁的熱膨脹係數差異，過厚的氧化層容易在氧化層與基板的界面，在燒成後的降溫過程中，因熱應力產生裂痕，導致其拉伸破壞強度反較將電阻膏直接塗佈於As-received氮化鋁基板為低。

The interfacial pore distribution, microstructure, and adhesive properties of an aluminum nitride (AlN) substrate screen-printed with resistor pastes have been investigated over a wide temperature range (600 ~ 850 oC). Some of the resistors have been doped with varying concentrations (5 ~ 20%) of submicronmeter Al2O3 particles. Some of the AlN substrates have also been thermally pre-oxidized at elevated temperatures before the printing process.
Sintering temperature for fully densification of the resistor film has been found to increase with the Al2O3 addition. The resistor strength after 850 oC firing reduces as the Al2O3 fraction increases. Blisters were found to occur at the film-substrate interface as the AlN grains reacting with the glass species in the paste at elevated temperatures (~ 700 oC). The interfacial pores reduce their size and population as the Al2O3 fraction increase; nonetheless, the film adhesion reduces.
The pre-oxidized AlN substrates reduce the blister formation when coated and fired with the resistors. The adhesive strength is found irrelevant to the Al2O3 addition. The AlN substrates with a “thick” oxide layer lead to a reduced interfacial strength, mainly resulting from the cracks existing at the interface during the cooling stage of the firing process, because of the mismatch in thermal expansion between the grown Al2O3 scale and the underlying AlN polycrystals. The overall strength of the thick-film coated substrate is reduced, when compared with the strength when the as-received AlN substrate is directly coated with the resistor paste and fired over the same temperature investigated.

中文摘要......................................................Ⅰ
英文摘要......................................................Ⅱ
致謝..........................................................Ⅲ
目錄..........................................................Ⅳ
圖表目錄......................................................Ⅵ
第一章 緒論..................................................1
1-1 前言......................................................1
1-2 研究動機及目的....................................1
第二章 前人相關研究..........................................3
2-1 改變厚膜塗料中玻璃相的成分................................5
2-2 將氮化鋁基板施以表面氧化處理......................7
2-3 基板與厚膜間的接著機構............................8
第三章 實驗步驟及方法........................................12
3-1 基板氧化.........................................12
3-2 塗料改質及燒成...................................12
3-2-1 塗料改質..................................12
3-2-2 塗料塗佈及燒成............................14
3-3 接著強度測試.............................................14
第四章 結果與討論............................................16
4-1 電阻膏緻密化與溫度的關係.........................16
4-2 塗料改質對界面微結構的影響.......................16
4-3 氧化結果.........................................22
4-3-1 氮化鋁基板之氧化增量行為..................22
4-3-2 氧化層之顯微結構..........................28
4-4 破壞強度分析.....................................37
4-4-1 拉伸破壞之結果............................37
4-4-2 破壞面之顯微結構分析......................37
4-4-2.1 表面未氧化之氮化鋁基板............37
4-4-2.2 表面氧化之氮化鋁基板..............38
第五章 結論..................................................50
參考文獻......................................................51
附錄..........................................................54

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