臺灣博碩士論文加值系統

目前透明導電薄膜均需要在 400~700 ℃ 進行 1~2 小時之退火，以獲得均質結晶組織及優異光電性質。考量透明導電薄膜在軟性高分子基板之應用，傳統高溫退火製程受到侷限。因此，本研究以奈米金屬薄膜為導電層，並透過通電試驗進而探討 ZnO/In/ZnO 與 ZnO/Ag/ZnO 奈米透明導電薄膜結構之低溫通電特性。
實驗結果顯示，未通電 ZnO/In/ZnO 結構，中間 In 層是連續薄膜，ZnO 與 In 界面處有微擴散現象；未通電 ZnO/Ag/ZnO 結構，中間 Ag層呈現顆粒狀膜，Ag 層部分基地具有雙晶結構。無論是 ZnO/In/ZnO 或ZnO/Ag/ZnO 系統，通電後不僅可誘發表面溫度達 140℃~170℃，並可使得 ZnO 薄膜之結晶度與電性質獲得改善。通電過程在焦耳熱和電遷移作用下，可驅動導電層原子往低濃度基地擴散，除了增加界面擴散層厚度外，ZnO 薄膜基地亦具有摻雜與部份再結晶，此低溫通電結晶化效應能有效提升 ZnO 薄膜電性。另外，通電試片之拉曼光譜均能被強化，但因大部份光子動能都被吸附用以促進再結晶行為，使得光子強度有下降和偏移特性。再者，奈米金屬導電層容易抑制 ZnO 之傅立葉轉換紅外線光譜訊號，導致傅立葉轉換紅外線光譜儀無法辨識薄膜結構於通電前後之差異性。透明導電薄膜之通電機制可於短時間內誘發薄膜結構發生相變態，進而改善光電特性，可提供低溫薄膜製程之應用參考。

Transparent conductive oxide (TCO) film needs annealing in 400~700 ℃ for 1~2 hours to obtain homogeneous crystalline texture and excellent photoelectric properties presently. Considering the application of TCO films in flexible polymer substrate, conventional high temperature annealing process is trapped. Therefore, in this thesis, the nano metallic film is used for a conductive layer, and the low-temperature electrical current characters of ZnO/In/ZnO as well as the ZnO/Ag/ZnO nano TCO structures are researched by electrical current testing.
The experimental results show that the middle indium layer is a continuous film, and the interface of ZnO as well as indium has micro diffusion phenomena in the as-sputtered ZnO/In/ZnO structure; as for the as-sputtered ZnO/Ag/ZnO structure, the middle silver layer is a granular film, and part of silver sites are twins structure. The induced temperature by electrical current testing in the both ZnO sandwich structures can reach 140℃~170℃ and the crystallization as well as the electric property can be improved. In the electrical current process, the conductive layer atoms will diffuse to lower concentration sites by Joule heating and electromigration effects which increase the thickness of interfacial diffusion layer, and the ZnO sites possess doping and partial recrystallization phenomena. Therefore, the low-temperature electrical current crystallization effect can promote the electric property of ZnO film effectively. Besides, the Raman spectrum of the electrical current sample can be enhanced but most of photon energy is absorbed to promote recrystallization behavior and this behavior also lets photon intensity decrease and shift. Moreover, nano metallic layer will suppress the FTIR spectra of ZnO easily, so it is difficult to differentiate the film texture differences about the as-sputtered and the electrical current testing samples by FTIR spectra. In a word, the electrical current mechanism for TCO can induce film texture phase transformations and improve the photoelectric characteristics to provide the application of low-temperature film process.

中文摘要................................................................................................I
Abstract................................................................................................II
致謝.....................................................................................................IV
總目錄...................................................................................................V
表目錄................................................................................................VIII
圖目錄..................................................................................................IX
第一章 緒論..........................................................................................1
1-1 前言.........................................................................................1
1-2 實驗目的..................................................................................2
第二章 理論基礎與文獻回顧................................................................3
2-1 透明導電氧化物(TCO)的製備..................................................3
2-2 氧化鋅薄膜的結構與特性.........................................................3
2-2-1 晶體結構........................................................................3
2-2-2 導電性質........................................................................4
2-2-3 光學性質........................................................................5
2-3 金屬薄膜的特性.......................................................................5
2-4 濺鍍理論..................................................................................6
2-4-1 濺鍍現象........................................................................6
2-4-2 直流濺鍍........................................................................6
2-4-3 磁控濺鍍........................................................................7
2-5 薄膜成長機制...........................................................................8
2-6 熱處理.....................................................................................9
2-7 通電熱處理............................................................................10
2-8 氧化鋅與中間金屬層接觸前後界面能帶機制..........................10
第三章 實驗方法與設備......................................................................18
3-1 實驗流程概述.........................................................................18
3-2 實驗材料準備.........................................................................18
3-2-1 濺鍍靶材與基板............................................................18
3-2-2 基板清洗......................................................................18
3-3 濺鍍製程參數.........................................................................19
3-4 薄膜厚度量測.........................................................................19
3-5 通電儀器與條件.....................................................................19
3-6 薄膜微結構分析.....................................................................20
3-6-1 掃描式電子顯微鏡(SEM)分析.......................................20
3-6-2 低掠角X光繞射儀(GIXRD)量測....................................20
3-6-3 穿透式電子顯微鏡(TEM)分析.......................................21
3-7 界面分析-化學分析電子儀(ESCA)鑑定..................................22
3-8 光電性質分析.........................................................................22
3-8-1 紫外-可見光分光光譜儀(UV-VIS Spectrophotometer)試驗...............................................................................................22
3-8-2 四點探針分析...............................................................22
3-8-3 拉曼光譜儀(Raman Spectrometer)檢測.......................23
第四章 實驗結果................................................................................32
4-1 ZnO/In/ZnO 鍍膜顯微組織特徵..............................................32
4-2 ZnO/In/ZnO 鍍膜通電誘發結構與電性之演變........................34
4-3 ZnO/Ag/ZnO 鍍膜顯微結構...................................................36
4-4通電鍍膜 ZnO/Ag 光電特性..................................................37
4-5通電鍍膜 ZnO/Ag 之結晶機制...............................................38
第五章 結果與討論.............................................................................73
5-1通電鍍膜光特性......................................................................73
5-2通電鍍膜之拉曼特性...............................................................73
5-3通電鍍膜之傅立葉轉換紅外線光譜特性..................................74
5-4薄膜 Zn/M/Zn 電致相變態行為..............................................74
第六章 結論........................................................................................80
參考文獻.............................................................................................81

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