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研究生:王朝俊
研究生(外文):Chao-Chun Wang
論文名稱:窄能隙矽基材料(Si1-xGex)製程技術、材料分析及太陽電池應用
論文名稱(外文):Narrow band gap Si-based material (Si1-xGex) processes, analyses and solarcell applications
指導教授:陳家富陳家富引用關係連水養連水養引用關係
指導教授(外文):Chia-Fu ChenShui-Yang Lien
學位類別:碩士
校院名稱:明道大學
系所名稱:材料科學與工程學系碩士班
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:2009
畢業學年度:97
語文別:中文
論文頁數:61
中文關鍵詞:太陽電池;高頻率電漿化學輔助沉積系統;非晶矽薄膜;非晶矽鍺薄膜
外文關鍵詞:solar cellPECVDa-Si:H filmsa-SiGe:H fil
相關次數:
  • 被引用被引用:1
  • 點閱點閱:253
  • 評分評分:
  • 下載下載:12
  • 收藏至我的研究室書目清單書目收藏:0
摘要
本論文利用高頻率電漿化學輔助沉積系統 (27.13 MHz) 來製備非晶矽 (a-Si:H) 及非晶矽鍺薄膜 (a-SiGe:H) ,並藉以不同製程壓力沉積非晶矽薄膜,以XPS、FTIR、UV-visible、Raman、XRD和 SEM等量測分析探討其薄膜性質,經由這些特性分析找出適合應用於太陽電池之製程最佳參數。在研究中,我們發現當沉積壓力越大時,薄膜沉積速率會隨著上升,結晶率也隨之增加,而薄膜表面出現晶粒團聚現象,隨著矽膜結晶率提升,使得氫含量變少而微結構 R 值參數也隨之變大,並進一步針對提高非晶矽薄膜太陽電池的轉換效率,我們改善薄膜太陽電池結構本質層 ( i 層) 做研究,希望藉由摻雜不同濃度的鍺烷含量,使本質層的能隙值變窄,進而增加太陽光在長波段的吸收,提高元件的轉換效率,研究結果顯示當鍺烷含量越多時,薄膜沉積速率會隨著上升,鍺結晶率也隨之提升,而使薄膜表面出現晶粒團聚現象,也因材料特性關係,使得能隙也變小,最後我們探討在不同 i 層厚度下對太陽電池效率的影響,非晶矽鍺太陽電池在 i 層厚度 375 nm 時,可得到開路電壓 Voc = 0.74 V 、短路電流密度Jsc = 9.9 mA/cm2 、填充因子FF = 0.60、轉換效率η = 4.42 %。
Abstract
In this research, the hydrogenated amorphous silicon films (a-Si:H) and hydrogenated silicon germanium (a-SiGe:H) films were deposited using by High-frequency plasma enhanced chemical vapor deposition (HF-PECVD). For intrinsic Si layer research, pressure effect on the properties of Si films were investigated. The properties of intrinsic Si films such as deposition rate, crystalline fraction, absorption coefficient, band gap, dark conductivity, photo conductivity, hydrogen content and microstructure factor as function as deposition pressure. We investigated the pressure effects of growth mechanisms and properties on silicon films. High-quality both intrinsic and doped a-Si layers have been deposited in this paper.
We report a narrow bandgap a-SiGe:H films with high photosensitivity using the mixture of SiH4 and GeH4 with H2 dilution. The effects of GeH4 / (SiH4 + GeH4 + H2) ratio on the properties of a-SiGe:H films are characterized by Raman spectrometer, X-ray photoelectron spectrometer, X-ray diffractometer spectrometer, Fourier transform infrared absorption spectroscopy, UV–Visible spectroscopy and scanning electron microscopy. We found that band gap decreases with increasing Ge content. We report the influence of Ge content on the properties of a-SiGe:H films and performance of p-i-n solar cells. The a-SiGe thin film solar cells with a Voc of 0.74 V, a Jsc of 9.9 mA/cm2 ,a fill factor of 0.60 and a maximum efficiency of 4.42 % were obtained.
總目錄
致謝··························································································································Ⅰ
中文摘要··················································································································Ⅱ
英文摘要··················································································································Ⅲ
總目錄······················································································································Ⅳ
圖目錄······················································································································Ⅵ
表目錄······················································································································Ⅶ
第一章 緒論·············································································································1
1.1 導論···············································································································1
1.1.1 非晶矽薄膜·······························································································2
1.2 研究動機········································································································4
第二章 文獻回顧·····································································································7
2-1 太陽電池原理·······························································································7
2-2 太陽電池種類·······························································································8
2-2-1 矽太陽能電池··························································································8
2-2-1-1 單晶矽太陽能電池···········································································9
2-2-1-2 多晶矽太陽能電池···········································································10
2-2-1-3 非晶矽太陽能電池···········································································10
2-2-1-4 化合物半導體太陽能電池·······························································11
2-2-2 其他太陽能電池······················································································12
2-2-2-1 無機太陽能電池···············································································12
2-2-2-2 有機太陽能電池···············································································13
2-2-2-3 濕式太陽能電池···············································································13
2-3 太陽電池等效電路························································································14
2-4 太陽電池轉換效率························································································16
2-5 國外與本論文研究相關之文獻····································································18
第三章 實驗方法·····································································································21
3-1 實驗方法與流程····························································································23
3-2 沉積系統與薄膜製備····················································································24
3-2-1 薄膜製備過程··························································································26
3-3分析儀器········································································································27
3-3-1 光學特性量測··························································································27
3-3-1-1紫外光/可見光吸收光譜儀 (UV-Visible) ·······································27
3-3-2 材料結構量測··························································································28
3-3-2-1場發射掃描式電子顯微鏡 (FE-SEM)··············································28
3-3-2-2 X光繞射分析儀 (XRD)···································································29
3-3-2-3 拉曼光譜儀 (Raman)·······································································31
3-3-2-4 傅立葉轉換紅外光譜儀 (FTIR)······················································33
3-3-2-5 X光光電子能譜儀 (XPS)······························································36
3-3-3 電性量測··································································································36
3-3-3-1 光暗電導 (σd、σph)··········································································36
第四章 特性量測與元件分析·················································································39
4-1 製程壓力對非晶矽薄膜的影響····································································39
4-1-1 材料結構分析··························································································39
4-1-2 光學特性分析··························································································44
4-1-3 電性量測分析··························································································45
4-2 不同製程參數對矽鍺薄膜的影響································································46
4-2-1 材料結構分析··························································································46
4-2-2 光學特性分析··························································································54
4-2-3 元件特性分析··························································································55
第五章 結論·············································································································57
第六章 未來展望·····································································································59
參考文獻··················································································································60
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