臺灣博碩士論文加值系統

本研究之目的為開發微機電式聚對二甲苯薄膜駐極體電容式麥克風，利用微機電系統(MEMS)技術，並以聚對二甲苯作為麥克風之振膜與駐極體材料，使用電暈放電方式注入電荷，並以快速原型技術製作麥克風外殼，其駐極體電容式麥克風為自偏壓，不須額外電源，便可產生訊號，降低了系統的體積與複雜性，並且麥克風之駐極體具有10-4至10-3 C/m2穩定的電荷密度，使麥克風具有較高靈敏度與較寬的頻率響應。
本研究之駐極體電容式麥克風可分為兩個結構，頂部為5 mm �e 5 mm �e 2 μm聚對二甲苯薄膜之振膜，底部為厚度5 μm的穿孔聚對二甲苯駐極體背板，以矽晶圓為基板，利用微機電加工技術，製作成低成本且高可靠度的麥克風。
駐極體電荷植入的部分，利用電暈放電技術，將電荷植入聚對二甲苯中，並使用田口實驗方法對電暈放電機台之各個影響參數進行分析，使植入駐極體表面之電荷密度達到最佳，其量測方式為表面靜電量測儀。
實驗結果表示本研究之駐極體電容式麥克風具有非常低的寄生電容、自偏壓、結構簡單、可大規模生產、高穩定度等優點。量測結果麥克風頻率範圍為100 Hz到25k Hz，開路靈敏度範圍在94 dB SPL下為0.56 mV/Pa到1.78 mV/Pa，頻率響應，總諧波失真率(THD)在94 dB SPL 1k Hz下為13.30%。

The goal of this research is to develop Parylene Based Thin Film MEMS Electret Microphones that are fabricated using Micro Electro Mechanical Systems (MEMS) technology, and using parylene as the material of microphone membrane and electret. The corona discharge is used for charge implantation, and the microphones case was made based on rapid prototype technology. The Electret Microphones is self-biasing no power required, which downsized the volume and complexity. The electrets obtained the stable charge densities about the order of 10-4 to 10-3 C/m2 so that the microphone has a high sensitivity and a wide frequency response.
Each microphone is manufactured as a two piece structure, comprising a microphone membrane unit having a 5 mm x 5 mm x 2 μm thin diaphragm and a 5 μm perforated electret backplate unit. The substrate is silicon manufactured by MEMS, so the microphone is inexpensive but high-quality.
The corona discharge is used for charge implantation on parylene, and analysis the parameters from each equipment of corona discharge by Taguchi Method, to maximize the performance of surface charge density from implanted electret.The electrostatic voltmeter is used to measure the charge density of the electrets.
The result shows the electret microphones have very low stray capacitance, self-biasing, mass producible, arrayable, high stability, structurally simple and extremely stable over time in the ordinary environment. The open-circuit sensitivities obtained range from 0.56 – 1.78 mV/Pa over the frequency range 100 Hz - 25 kHz at 110 dB SPL, 1k Hz. The total harmonic distortion of microphone is less than 13.30% at 110 dB SPL, 1k Hz.

摘要........................I
Abstract....................II
誌謝........................III
目錄........................IV
表目錄......................VIII
圖目錄......................IX
符號說明 ....................XII
第一章 緒論.................1
1.1前言.....................1
1.1.1駐極體電容式麥克風.....1
1.1.2微機電麥克風...........2
1.2研究背景與目的...........4
1.3 文獻回顧................7
1.3.1傳統電容式麥克風.......7
1.3.2 MEMS電容式麥克風......11
1.4小結.....................23
第二章 研究方法.............24
2.1駐極體...................24
2.1.1電暈放電...............25
2.2 駐極體電容式麥克風.....27
2.2.1工作原理...............27
2.2.1.1外部偏壓.............29
2.2.1.2自偏壓...............29
2.2.2駐極體麥克風特性.......29
2.3開路靈敏度...............32
2.3.1 機械靈敏度............33
2.3.2電靈敏度...............36
2.3.3負載靈敏度和電響應.....37
2.3.4麥克風和前置放大器總靈敏度....39
2.4 頻率響應................40
2.5動態範圍.................41
2.6 穩定性..................42
2.6.1溫度...................42
2.6.2濕度...................43
2.6.3大氣氣壓...............44
2.6.4振動...................44
2.6.5電磁場.................45
2.7由駐極體電荷的靜電感應引起的振膜變形....46
2.7.1剛性背板...............46
2.8導電銀膠.................47
2.9田口實驗計畫法...........48
2.10快速原型技術............50
2.10.1熔融擠製成型..........50
第三章 實驗流程.............52
3.1駐極體電荷植入製程.......52
3.1.1電暈放電機台的設置.....52
3.1.2田口實驗計畫法最佳化...54
3.2 微機電式聚對二甲苯薄膜駐極體電容式麥克風製程.....58
3.2.1駐極體麥克風之振膜.....58
3.2.2駐極體麥克風之背板.....63
3.2.3駐極體麥克風封裝.......68
3.2.4 製程技術..............71
3.1.4.1矽晶圓基材前處理.....71
3.2.4.2感應耦合電漿蝕刻原理.71
3.2.4.3光阻塗佈製程.........73
3.2.4.4 Parylene沉積製程 ....73
3.2.4.5金屬薄膜製程.........76
3.2.4.6快速原型技術.........76
3.3量測配置.................78
3.3.1表面電荷密度量測.......78
3.3.2麥克風性能量測.........80
第四章 結果與討論...........82
4.1駐極體電荷植入製程結果...82
4.1.1電暈放電設備設置結果...82
4.1.2田口實驗計畫法最佳化結果....85
4.1.2.1實驗驗證..................88
4.2駐極體電容式麥克風製程結果....90
4.2.1駐極體電容式麥克風性能量測..90
4.2.2駐極體電容式麥克風實際外觀與成品..93
4.2.3駐極體電容式麥克風性能問題..94
4.2.4麥克風比較..................95
第五章 結果與未來研究方向........97
5.1結論..........................97
5.2未來研究方向..................98
參考文獻 .........................99

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