臺灣博碩士論文加值系統

對於一個晶圓代工廠而言，良率與產能最為公司所重視，因而量測在晶圓製造過程中，扮演一個非常重要的角色。在量測上，一片晶圓所要量測的項目，少則數十項，多則上百項，而量測項目會依晶圓代工之客戶須求，與產品差異而有所不同的調整。目前半導體廠最為常用的元件不外乎就是電晶體，其臨界電壓（threshold voltage）是電晶體量測之重心所在，藉由量測臨界電壓，於電性上分析，可概略的探討出電晶體的心臟「閘極氧化層（Gate Oxide）」，是否達到設計之氧化層厚度與品質要求。
以動態存取記憶體(DRAM)為例，當電性顯示出電晶體之臨界電壓較小時，電晶體的開與關較難受閘極電壓控制，因而影響到資料存取；反之，當電晶體之臨界電壓較大時，所需的閘極電壓就要稍大些，電力之消耗為其致命點，其影響在可攜式的產品較為嚴重，而現下產業趨向於可攜式產品的開發，善用能源以避免資源耗竭，顯然成為時下熱門研究發展的方向。此論文發表著重在臨界電壓量測技術的改進，尤以量測產能之提升最為關心，且兼備所測得之臨界電壓值的可靠度。

In a foundry fab., the yield and the total throughput of wafer productions are more concerned. It is no doubt that measurement has played an extraordinarily important role when manufacturing wafers. Usually, there will be more than tens and less than hundreds of items in whole testing. All of the tested items are listed for the different customers’ requests and the variations product applications. In the semiconductor industry, the N-type or P-type MOS field-effect transistor is the most popular application device. The threshold voltage measurement is always concerned. By testing the threshold voltage and analyzing in electrical metrology, one can figure out what the thickness or the quality of the gate oxide is during oxide growth.
Using the DRAM (Dynamic Random Access Memory) product as an example, people can observe when the threshold voltage is less than the default threshold voltage; it will be difficult to have an excellent control with this transistor. Thus, this value disturbs the access of the data. On the contrary, when the threshold voltage is greater than the default threshold voltage, the electrical power consumption is increased and makes the serious influence of the portable products. Up to now, most of companies have obviously emphasized and invested the research and development of the portable products. It’s a trend to focus on the green power to avoid the resource exhausting. In this thesis, we propose a new concept to promote the threshold voltage measurement metrology. It’s especially helpful in the wafer mass production. After test and evaluation, this metrology shows reliable performance.

中文摘要 i
英文摘要 ii
誌謝 iii
目錄 iv
表目錄 v
圖目錄 vi
第一章 緒論 1
第二章 元件物理概論 3
2.1 研究動機與目的 3
2.2 潛通道與表面通道 3
2.3 MOSFET物理元件特性 5
2.3.1 MOSFET介紹 6
2.3.2 pn接面 9
2.3.3 MOSFET能帶圖 ……………………………………… 18
2.3.4 反轉層………………………………………21
第三章 臨界電壓與次臨界電壓………………………………………29
3.1 臨界電壓 29
3.1.1 臨界電壓之計算 29
3.1.2 垂直與橫向不均勻濃度摻雜 32
3.1.3 短通道效應 34
3.1.4 窄通道效應 35
3.2 次臨界電壓 36
3.2.1 次臨界電壓對元件的重要性 39
3.2.2 數學參數模組分析 40
3.2.3 魚鰭式場效電晶體 40
第四章 實驗與結果 42
4.1 整體實驗架構說明 42
4.1.1 六吋半導體手動探針量測平台(Cascade) 42
4.1.2 Agilent 4156C 44
4.1.3 Agilent 4284A 45
4.2 臨界電壓量測 47
4.2.1 Gm臨界電壓量測技術 47
4.2.2 次臨界電壓擺動模型 48
4.3 次臨界電壓擺動之量測實驗架設 49
4.3.1. 元件I-V特性圖 51
4.3.2. 次臨界電壓擺動之量測 55
4.3.3. Gm量測臨界電壓 58
4.4 次臨界電壓擺動之臨界電壓量測可靠度 61
4.5 臨界電壓量測技術比較 64
4.5.1 直接量測 64
4.5.2 二分法量測 65
4.5.2 跳躍回饋量測 65
第五章 結論 67
參考文獻 69

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