[1]張品全,”太陽電池”,349期,科學發展。
[2]尤如瑾,”世界太陽光電產業現況與展望”,263期,機械工業。[3]林螢光,”光電子學-原理、元件與應用”,全華出版社。
[4]D.A. Neamen, “Semiconductor physics &devices”, 2nd edition, McGraw-Hill.
[5]熊谷秀,”再生能源”,383期,科學發展。
[6]B. Streetman, “Solid state electronic devices”, 5th edition, PRENTICE HALL.
[7]J. Szlufcik, S. Sivoththaman, J. F. Nlis, R. P. Mertens, R. V. Overstraeten, “Low Cost Industrial Technologies of Crystalline silicon Solar Cell,” Proceedings of the IEEE, vol. 85, pp.711-730, 1997.
[8]莊嘉琛,”太陽能工程-太陽電池篇”,全華出版社。
[9]J. Y. Lin, H. L. Hwang and C. Y. Sun, “Photovoltaic Improvement of single-crystalline Si Space Solar Cell,” National EDMS, pp. 167, 1995.
[10]M. A. Green, J. Zhao, “24% efficiency silicon solar cells,” Appl.Phys, vol.57, pp.602-604, 1990.
[11]P. Campbell, S. R. Wwnham, and M. A. Green, “Light trapping and reflection control with tilted pyramids and grooves”, in Conf. Rec. 20th IEEE Photovolt, Special. Conf. (Las Vegas.), pp.713 , Sept, 1998.
[12]C. T. Sah, “Reduction of Solar Cell Efficiency Across the Back surface Field Junction,” Solid State Electronics, vol. 31, pp. 451-457, 1984.
[13]余合興,半導體材料與元件,第三版,中央圖書社,1996。
[14]林坤立,單晶矽太陽電池製程及其頻譜響應之研究,國立雲林科技大學,碩士論文,2004。[15]黃崇傑,”薄膜太陽電池研究發展狀況”,工業材料,182期,91年2月。[16]H. Morikawa, Y. Nishimoto, H. Naomoto, Y. Kawama, A. Takami, S. Arimoto, T. Ishihara and K. Namba, “16.0% Efficiency of large area (10 cm×10 cm) thin film polycrystalline silicon solar cell,” Solar Energy Materials and Solar Cells, Volume 53, Issues 1-2, pp. 23-28, May, 1998.
[17]M. K. van Veen, P. A. T. T. van Veenendaal, C. H. M. van der Werf, J. K. Rath and R. E. I. Schropp, “ a-Si:H/poly-Si tandem cells deposited by hot-wire CVD,” Journal of Non-Crystalline Solids, Vol. 299-302, Part 2, pp. 1194-1197, April, 2002.
[18]M. Komoda, K. Kamesaki, A. Masuda and H. Matsumura, “Formation of silicon films for solar cells by the Cat-CVD method ,” Thin Solid Films, Vol. 395, Issues 1-2, pp. 198-201, 3 September, 2001.
[19]Y. Nakano, S. Goya, T. Watanabe, N. Yamashita and Y. Yonekura ,“High-deposition-rate of microcrystalline silicon solar cell by using VHF PECVD,” Thin Solid Films, Vol. 506-507, pp. 33-37, 26 May, 2006.
[20]J. Yoo, J. Lee, S. Kim, K. Yoon, I. J. Park, S. K. Dhungel, B. Karunagaran, D. Mangalaraj and J. Yi, “High transmittance and low resistive ZnO:Al films for thin film solar cells,” Thin Solid Films, Vol. 480-481, pp. 213-217,1 June, 2005.
[21]O. Nast, S. Brehme, S. Pritchard, A. G. Aberle and S. R. Wenham, “Aluminium-induced crystallisation of silicon on glass for thin-film solar cells,” Solar Energy Materials and Solar Cells, Vol. 65, Issues 1-4, pp. 385-392, January, 2001.
[22]D. Dimova-Malinovska, O. Angelov, M. Sendova-Vassileva, M. Kamenova and J. -C. Pivin, “Polycrystalline silicon thin films on glass substrate,” Thin Solid Films, Vol. 451-452, pp. 303-307,March, 2004.
[23]D. Y. Kim, M. Gowtham, M. S. Shim and J. Yi, “Polycrystalline silicon thin film made by metal-induced crystallization,” Materials Science in Semiconductor Processing, Vol. 7, Issues 4-6, pp. 433-437, 2004.
[24]C. Min, Z. Weijia, W. Tianmin, J. Fei, L. Guohua and D. Kun ,“Nanocrystalline silicon films with high conductivity and the application for PIN solar cells,” Vacuum, Vol. 81, Issue 1, pp. 126-128, September, 2006.
[25]W. Fuhs, S. Gall, B. Rau, M. Schmidt and J. Schneider, “ A novel route to a polycrystalline silicon thin-film solar cell,” Solar Energy, Vol. 77, Issue 6, pp. 961-968, December, 2004.
[26]http://www.corning.com
[27]蔡東璋,陳夢涵,”統計製程管制應用於平面顯示器之鋁金屬濕蝕刻能力探討”,第10屆全國品質管理研討會,A2-7,64~73頁。
[28]黃惠忠,”奈米材料分析”,化學工業出版社。
[29]紀東煒,氮化鎵/氮化鋁鎵多層量子碟之研究,國立中山大學物理研究所,碩士論文,2004。[30]Richard L. McCreery., “Raman spectroscopy for chemical analysis”, John Wiley & Sons.
[31]王建祺,吳文輝,馮大明,”電子能譜學” ,國防工業出版社。
[32]John F. Watts, “An Introduction to Surface Analysis by XPS and AES”, WILEY.
[33]http://www.lasurface.com/accueil/index.php