臺灣博碩士論文加值系統

本研究將分別進行三個實驗，第一個實驗探討將不同比例的氧化鋅奈米粒子摻入聚3-己烷噻吩[poly(3-hexylthiophene)]溶液中，透過凝膠滲透層析儀與拉曼光譜驗證氧化鋅奈米粒子摻入聚3-己烷噻吩中的影響，接著利用變溫霍爾觀測系統，觀察其載子遷移率與溫度的關係，從實驗結果發現導電率隨著氧化鋅奈米粒子的增加而增加，導電率的增加主要來自於載子遷移率的提升。透過極化子理論分析顯示氧化鋅奈米粒子摻入聚3-己烷噻吩會使分子之間的間距增加，進而提升載子遷移率。在第二個實驗，則是將不同比例的氧化鋅奈米粒子摻入聚3-己烷噻吩與n型矽基板製作混成二極體元件，藉由元件之光響應實驗探討載子的傳輸機制，由聚3-己烷噻吩二極體與有機薄膜電晶體的電荷釋放與捕捉說明光電流產生模式。而第三個實驗，則是將不同比例的氧化鋅奈米粒子摻入聚3-己烷噻吩並塗佈於矽奈米線製作另一型混成二極體元件，主要是由於矽奈米線具有較優越的光注入特性，並探討氧化鋅奈米粒子摻入聚3-己烷噻吩塗佈於矽奈米線元件之光電特性。

In this study, three topics of issue are discussed. In the first experiment, the effects of the incorporation of ZnO nanoparticles into poly(3-hexylthiophene) (P3HT) was investigated. Hall measurements were performed for demonstrating the carrier conduction mechanism. From the experimental results, conductivity proportional to ZnO doping was observed. The improvement of conductivity is considered to mainly come from a mobility enhancement. Hall-effect analysis by using the polaron theory revealed that ZnO doping might lead to an increased spacing between molecules, thus enhancing the carrier mobility. In the second experiment, the ZnO-doped P3HT/n-type Si diode was fabricated. The effect of ZnO doping on the optical and electrical properties of ZnO-doped P3HT/n-type Si diodes was examined. Charge detrapping/trapping phenomena are studied through time domain measurement for P3HT-based diodes and thin-film transistors. ZnO influences the photoresponse by providing additional holes that serve to reduce the photocurrent time constant. In the third experiment, the ZnO-doped P3HT/Si nanowire arrays/n-type Si diode was fabricated. This is because of SiNWs having a more significant contribution to light injection. The effect of ZnO doping on the optical and electrical properties of ZnO-doped P3HT/Si nanowire arrays/n-type Si diodes was examined.

目錄 II
圖目錄 VI
表目錄 IX
摘要 X
Abstract XI
誌謝 XII
第一章 緒論 1
1.1 前言 1
1.2 太陽能電池的演進與發展 3
1.3 太陽能電池的種類 5
1.4 有機太陽能電池工作機制 8
1.5 太陽能電池各參數簡介 12
1.6 空氣質量 14
1.7 論文架構 16
第二章 實驗儀器與儀器原理 18
2.1 直流濺鍍機 18
2.2 拉曼光譜儀 20
2.2.1 拉曼光譜原理 20
2.2.2 拉曼儀器架構 21
2.3 霍爾量測系統 24
2.4 薄膜旋轉塗佈成膜 27
2.5 橢圓儀量測原理與應用 28
2.5.1 橢圓儀量測原理 29
2.5.2 橢圓偏光儀之儀器架構簡介 31
2.6 原子力顯微鏡 34
2.7 凝膠滲透層析儀 36
2.8 電流-電壓量測法 37
2.9 模擬太陽光源系統 38
第三章 實驗步驟 39
3.1 實驗儀器 39
3.2 實驗材料 40
3.2.1 有機材料 40
3.2.2 ZnO奈米粒子 41
3.2.3 矽基板 41
3.3 P3HT溶液製備 42
3.4 ZnO奈米粒子溶液製備 43
第四章 ZnO奈米粒子摻入P3HT提升載子遷移率 44
4.1 前言 44
4.2 實驗流程 47
4.3 結果與討論 49
4.4 結論 56
第五章 ZnO奈米粒子摻入P3HT/n-Si提升光電流 57
5.1 前言 57
5.2 實驗流程 59
5.3 結果與討論 62
5.4 結論 71
第六章 ZnO奈米粒子摻入P3HT/SiNWs/n-Si光電特性 72
6.1 前言 72
6.2 實驗流程 73
6.3 結果與討論 75
6.4 結論 79
第七章 總結論 80
參考文獻 82
圖目錄
圖1 1.太陽能電池的分類。 6
圖1 2.有機太陽能電池工作機制。 11
圖1 3.太陽能電池各項參數示意圖，a為未照光電流-電壓曲線，b為照光下的電流-電壓曲線。 13
圖1 4.太陽位置與空氣質量的定義。 16
圖2 1.直流濺鍍示意圖。 19
圖2 2.拉曼散射的機制。 21
圖2 3.(a)光子計數器及利用(b)光學多頻道分析儀的拉曼光譜儀。 23
圖2 4.利用霍爾效應量測載子濃度的基本裝置。 26
圖2 5.偏振光束在界面或薄膜上反射或穿透時出現的偏振轉換。 30
圖2 6.橢圓偏光儀示意圖。 32
圖2 7.電流-電壓量測機台型號是Keithley Model-4200-SCS/F。 37
圖2 8.模擬太陽光源。 38
圖3 1.P3HT的化學結構。 40
圖4 1.ZnO奈米粒子摻入P3HT的薄膜結構示意圖。 48
圖4 2.凝膠滲透層析儀量測P3HT分子量。 50
圖4 3.ZnO奈米粒子摻入P3HT量測拉曼頻譜[(a) P3HT、(b) P3HT:ZnO(I)和(c) P3HT:ZnO(II)]。 52
圖4 4.電阻率對溫度關係[(a) P3HT、(b) P3HT:ZnO(I)和(c) P3HT:ZnO(II)]。 54
圖4 5.載子濃度對溫度關係[(a) P3HT、(b) P3HT:ZnO(I)和(c) P3HT:ZnO (II)]。 55
圖4 6.載子遷移率對溫度關係[(a) P3HT、(b) P3HT:ZnO(I)和(c) P3HT:ZnO (II)]。 55
圖5 1.元件結構示意圖。 61
圖5 2.以OTFT結構製作之元件示意圖。 61
圖5 3.光響應：電流-時間關係，重複切換光源開關[(a) P3HT、(b) P3HT:ZnO(I)和(c) P3HT:ZnO(II)]。 63
圖5 4.(a) P3HT、(b) P3HT:ZnO(I)和(c) P3HT:ZnO(II)施加VINGS= 40 V；(d) P3HT，(e) P3HT:ZnO(I)和(f) P3HT:ZnO(II)施加VINGS= -40 V光響應：汲極電流-時間關係。 66
圖5 5.照光下的J-V曲線[(a) P3HT、(b) P3HT:ZnO(I)和(c) P3HT:ZnO(II)]。 68
圖5 6.AFM圖[(a) P3HT、(b) P3HT:ZnO(I)和(c) P3HT:ZnO(II)]。 70
圖6 1.元件結構示意圖。 74
圖6 2.(a)以SEM觀測蝕刻時間為15分鐘矽奈米線的剖面結構圖，(b)以SEM觀測蝕刻時間為15分鐘矽奈米線的表面形貌圖。 75
圖6 3.矽基板經過蝕刻成矽奈米線前後之反射率，[(a)矽基板和(b)矽奈米線試片]。 76
圖6 4.照光下的J-V曲線，[(a) P3HT、(b) P3HT:ZnO(I)和(c) P3HT:ZnO(II)]。 78
表目錄
表1 1.再生能源比較。 2
表4 1.P3HT超音波振盪前後分子量。 51
表4 2.穿隧遷移率公式擬合參數結果。 56
表5 1.以P3HT製作OTFT元件結構汲極電流-時間特性曲線擬合參數。 67
表5 2.P3HT/n-Si、P3HT:ZnO(I)/n-Si和P3HT:ZnO(II)/n-Si在照光下的元件特性參數。 68
表6 1.P3HT/SiNWs/n-Si、P3HT:ZnO(I)/SiNWs/n-Si和P3HT:ZnO(II)/ SiNWs/n-Si在照光下的元件特性參數。 78

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