臺灣博碩士論文加值系統

本篇論文是對0.35μm製程的p通道橫向擴散金氧半場效電晶體元件(LDMOS transistor)進行熱載子可靠度量測研究。針對各參數的退化，分析出其主要退化的機制。
首先介紹所謂高壓元件的一些結構與一般MOS的差異與應用，以及什麼是LDMOS電晶體。而因應元件微縮，其氧化層厚度和元件尺寸的減少，但其供應電壓卻不會減小，造成漏電流和電場增大。因此其可靠度議題值得深入探討。
經由熱載子實驗量測以求得元件的可靠度分析結果。量測後發現元件的參數在不同的閘極電壓下會有不同的退化機制，然後利用TCAD模擬軟體 (Technology computer-aided design simulation)和charge pumping方法可以找出其退化原因與位置不同所造成不同的結果。
最後經由找出標準尺寸元件的lifetime並且和不同尺寸元件進行熱載子實驗後比較退化有哪些不同。比較lifetime後可以得知改變哪些參數會對於元件可靠度有所改善。

In this thesis, the experiment mainly studies on the hot-carrier reliability of a 0.35 μm p-type lateral double diffusion metal oxide semiconductor field-effect-transistor. Base on the degradation of every parameter, we can analyze the mechanism causing the device degradation.
First, the differences between HV device structure and normal LV MOS structure are introduced. The development of LDMOS device is also introduced. As process scaling down, the reliability becomes an important issue to discuss.
After hot carrier stress experiment on standard dimension device, some parameters under different gate bias result in different degradation trends. TCAD simulation and charge pumping method are used to confirm the damage location induced different degradation.
At last we study on lifetime issue to compare the device reliability. First we need a degradation index in lifetime model. And then we process hot carrier stress experiment on different dimension devices (S, L, and C). Then the extracted lifetime results are compared to find out which dimension variation will improve the device reliability.

Abstract (Chinese) IV
Abstract (English) VI
Acknowledgements VIII
Contents IX
Figure Captions XI
List of Tables XIV
Chapter 1 Introduction
1.1 Introduction to high voltage MOSFET 1
1.2 Introduction to hot carrier reliability 2
1.3 About the thesis 3
Chapter 2 Measurement & Device Characteristics
2.1 Introduction 10
2.2 Measurement methodology 10
2.2.1 Measurement setup 10
2.2.2 Id-Vd measurement 10
2.2.3 Id-Vg measurement 11
2.2.4 VT extraction 12
2.3 Device description 12
2.4 Measurement results 12
2.5 Summary 13
Chapter 3 Analysis of Hot Carrier Degradation Phenomenon
3.1 Kirk effect 25
3.2 Hot carrier experiment setup 25
3.3 Experimental results 26
3.3.1 Hot carrier experiment results 26
3.3.2 Introduction for HEIP effect in PMOS transistors 27
3.3.3 |VT| shift and Ron degradation analysis 27
3.4 Charge pumping method & TCAD simulation analysis 28
3.4.1 Introduction to charge pumping method 28
3.4.2 Experiment 29
3.4.3 Charge pumping experiment result 30
3.4.3 TCAD simulation result 31
3.5 Result discussions 31
3.6 Summery 33
Chapter 4 Effects of Device Dimension on Lifetime
4.1 Introduction 51
4.2 NMOS vs. PMOS 51
4.3 Degradation index and lifetime 52
4.4 Hot carrier stress under different dimension 53
4.5 Summery 54
Chapter 5 Conclusion and Future Work
5.1 Conclusion 60
5.2 Future work 61
References 62

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