臺灣博碩士論文加值系統

非線性光學單晶是在光電元件中之重要零組件，而其生長更是光電產業之關鍵技術。而光折變晶體更在其光資訊處理、計算、影像儲存等應用的快速發展及需求，近年來頗受重視，然而，晶體的品質常是技術發展上的瓶頸。傳統Cz法生長時，在不仰賴秤重系統的情形下，晶體的直徑控制不易，且由於偏析效應，造成晶體軸向濃度分佈不均。因此本實驗室擬建立一非傳統的晶體生長技術，結合區熔法的連續性及Cz法便易性的優點，稱為區熔式提拉法(Zone-Leveling Czochralski Method，簡稱ZLCz法)，並以區熔提拉法來生長矽酸鉍晶體。
在研究的過程中，我們將探討直徑控制的機制，並得到直徑控制穩定性的條件，以達到均勻直徑的晶體為目的，最重要的是引入內坩堝的概念及裝置，解決連續固體進料生長晶體時所會遇到的氣泡包覆之問題。

Nonlinear optical (NLO) crystals are important components in optoelectronic devices, and their growth is also a critical technology in the industry. Particularly, with the fast development of the optical information processing, computing, and storage, the need of photorefractive materials increases dramatically. Extensive research has been focused in this field. However, the quality of the crystals is often a bottleneck in its applications. By traditional Czochralski method, it is difficult to get good diameter control during growth. And with segregation effect, it can not grow single crystal with compositional uniformity. Therefore, we attempt to develop a non-traditional crystal growth technique, the so-called Zone-Leveling Czochralski (ZLCz) method. The ZLCz growth technique is a combination of the zone-melting (or leveling) and the Czochralski methods having the advantages of both methods. With the developed set up we have grown the important photorefractive single crystals, such as Bismuth Silicate (BSO).
In this research project, we discuss the mechanism of diameter control and established the stable crystal growth condition. Nevertheless, bubble inclusion problem is always found in the process. By using an inner crucible, we are able to solve this problem.

中文摘要………………………………………………………………….I
Abstract………………………………………………………………….II
目 錄…………………………………………………………………..III
圖目錄…………………………………………………………………..Ⅵ
表目錄…………………………………………………………………..Ⅸ
第一章 緒論…………………………….……………………………….1
1.1 簡介……………………………………………………………..1
1.1-1矽酸鉍晶體性質及其應用………………………………...1
1.1-2晶體生長製程……………………………………………...4
1.2 文獻回顧………………………………………………………..5
1.3 研究動機………………………………………………………..8
第二章 實驗系統、設備及流程……………………….………………10
2.1實驗設備………………………………………………………..10
2.1-1爐體……………………………………………………….10
2.1-2熱源……………………………………………………….15
2.1-3電源控制箱.………………………………………………15
2.1-4升降及旋轉裝置………………………………………….17
2.1-5白金坩堝………………………………………………….17
2.1-6內坩堝…………………………………………………….18
2.1-7晶桿……………………………………………………….18
2.1-8晶體生長室……………………………………………….18
2.1-9保溫裝置………………………………………………….21
2.1-10記錄設備………………………………………………..21
2.1-11量測設備…………………………………………………23
2.2實驗流程…………………………………………………………23
2.2-1材料製備………………………………………………….24
2.2-2材料裝填………………………………………………….24
2.2-3裝置內坩堝……………………………………………….25
2.2-4晶體生長實驗步驟……………………………………….25
第三章 結果與討論……………………………………………………31
3.1晶體直徑控制…………………………………………………..31
3.1-1能量平衡探討…………………………………………….31
3.1-2質量平衡探討…………………………………………….48
3.2晶體品質………………….….…………………………………51
3.2-1氣泡問題…………….……………………………………51
3.2-2晶體不同位置之品質分析……………………………….54
3.2-3晶體之長速及轉速……………………………………….62
3.2-4 BSO單晶材料分析及應用……………………………….62
第四章 結論……………………………………………………………72
參考文獻……………………………………………………………….75

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