臺灣博碩士論文加值系統

本論文採用二階段性的實驗成長氧化鋅奈米柱薄膜。先在基板預先鍍上晶種層，再利用化學溶液成長氧化鋅奈米柱薄膜，並將以此法所製作的氧化鋅奈米柱薄膜製作成電晶體。完成元件製作之後，透過SEM、XRD、PL等測量可知此法所得到不同表面形貌的氧化鋅奈米柱薄膜結構的物理特性，再透過 I-V 曲線的量測得知這些薄膜是否具有電晶體特性。在成長溶液濃度0.075 M、成長溫度75°C、成長時間為90分鐘的條件下，我們製作出了具有場效應的氧化鋅奈米柱薄膜電晶體，奈米柱薄膜厚度約為500 nm，on / off current ratio 為 2.06，載子遷移率達 0.002 cm2/Vs。此實驗控制在低溫成長，且原理簡單，製作過程並不複雜，無須高單價儀器輔助即可完成具有場效應的氧化鋅奈米柱薄膜電晶體。

In this thesis, ZnO nanorods were fabricated by two-step process. In the first instance, the substrate was pre-coated seed layer by sol-gel spin-coating method before growing nanorods . Secondly, ZnO nanorods thin film were synthesized by Chemical bath deposition (CBD). ZnO nanorods thin films were measured by SEM, XRD and photo- luminescence spectra to get there physical characteristic. We fabricated the field effective transistor by using these ZnO nanorods thin films and measured I-V curve of these transistors. We obtained the ZnO nanorods thin film with field effect by 0.075 M of solution concentration, 75 ℃ of growth temperature and 90 minutes of growth time. The characteristic of devices were that Ion/Ioff ratio was 1.78 and channel mobility was 1.247 cm2/Vs has been determined. As we demonstrate here, the technique is easily controlled, low temperature, and low cost, and can be used to produce ZnO nanorods thin films with field effect.

致謝.....................................................III
摘要.......................................................V
Abstract..................................................VI
目錄.....................................................VII
圖表目錄...................................................X
一、緒論...................................................1
1-1 研究動機...........................................1
二、理論與文獻回顧.........................................5
2-1 氧化鋅成膜機制.........................................5
2-2 電漿濺鍍法 (Plasma Sputtering).........................6
2-2-1 直流濺鍍 (DC sputtering).............................6
2-2-2 射頻濺鍍 (RF sputtering).............................7
2-3 蒸鍍法.................................................9
2-3-1 電阻式蒸鍍...........................................9
2-3-1 電子束蒸鍍..........................................10
2-4 氧化鋅奈米柱反應機制..................................13
2-4-1 化學溶液成長法反應機制..............................13
2-4-2氣體-液體-固體(Vapor-Liquid-Solid Process；VLS)......18
2-4-2 VS機制..............................................20
2-5 化學溶液成長法........................................22
2-6其他方法成長氧化鋅奈米柱...............................25
2-6-1 金屬有機化學氣相沉積法(MOCVD).......................25
2-6-2 以奈米級孔洞之模具成長..............................27
2-7 氧化鋅之發光機制......................................29
2-8 金屬氧化物半導體場效電晶體 (MOSFET) 的操作原理........33
2-8-1 MOS 電容............................................33
2-8-2 MOSFET 的結構.......................................35
2-8-2 MOSFET 的操作模式...................................36
2-9 Top contact vs. Bottom contact........................42
2-10 氧化鋅奈米柱電晶體...................................45
三、實驗部分..............................................54
3-1 儀器設備..............................................54
3-1-1 製程設備............................................54
3-1-2 量測設備............................................55
3-2 藥品..................................................58
3-3 實驗流程..............................................59
3-3-1 電極................................................60
3-3-2 半導體層............................................63
四、實驗結果..............................................67
4-1 SEM...................................................68
4-2 XRD...................................................71
4-3 PL....................................................74
4-4 I-V curve.............................................77
4-5 討論..................................................81
五、結論與未來展望........................................83
Reference.................................................84

[1] KyongTae Kang, Il-Doo Kim, Mi-Hwa Lim, et al., Thin Solid Films 516 (2008) 1218
[2] Hua-Chi Cheng, Chia-Fu Chen, Cheng-Chung Lee, Thin Solid Films 498 (2006) 142
[3] Jae Young Park, Hwangyou Oh, Ju-Jin Kim, et al., J. Cryst. Growth. 287 (2006) 145
[4] Baoquan Sun and Henning Sirringhaus, Nano Lett. 5 (2005) 2408
[5] David C. Paine, Burag Yaglioglu, Zach Beiley, et al., Thin Solid Films 516 (2008) 5894
[6] Ved Prakash Verma, Do-Hyun Kim, Hoonha Jeon, et al., Thin Solid Films 516 (2008) 8736
[7] Xin-An Zhang, Jing-Wen Zhang, Wei-Feng Zhang, et al., Thin Solid Films 516 (2008) 3305
[8] M. H. Huang, S. Mao, H. Feick, et al., Science 292 (2001) 1897.
[9] Y. B. Li, Y. Bando, T. Sato, et al., Applied Physics Letters 81 (2002) 144
[10] B. D. Yao, Y. F. Chan, and N. Wang, Applied Physics Letters 81 (2002) 757
[11] V. Gupta, P. Bhattacharya, Y. I. Yuzuk, et al., Journal of Crystal Growth 287 (2006) 39
[12] K. S. Kim, H. W. Kim, Physica B 328 (2003) 368
[13] C. L. Wu, L. Chang , H. G. Chen, et al., Thin Solid Films 498 (2006) 137
[14] Chu-Chi Ting, Chang-Hung Li, Chih-You Kuo, et al., Thin Solid Films 518 (2010) 4156
[15] P. (Pierre) Villars, Crystallographic data for intermetallic phases, (1997)
[16] N. Yamazoe, Sensors and Actuators B 5 (1991) 7
[17] G. Agarwal and Robert F. Speyer, Journal of The Electrochemical Society 145 (1998) 2920
[18] J. T. Hu, T. W. Odom, and C. M. Lieber, Accounts of Chemical Research 32 (1999) 435
[19] L. Dong, J. Jiao, D. W. Tuggle, et al., Applied Physics Letters 82 (2003) 1096
[20] M. Law, L. E. Greene, J. C. Johnson, et al., Nature Materials 4 (2005) 455
[21] H. M. Kim, Y. H. Cho, H. Lee, et al., Nano Letters 4 (2004) 1059-1062
[22] S. Huang, X. Cai, and J. Liu, Journal of the American Chemical Society 125 (2003) 5636
[23] R. C. Wang, C. P. Liu, J. L. Huang, et al., Applied Physics Letters 87 (2005) 013110
[24] K. Haga, M. Kamidaira, Y. Kashiwaba, et al., Journal of Crystal Growth 214 (2000) 77
[25] H. Ko, W. P. Tai, K. C. Kim, et al., Journal of Crystal Growth 277 (2005) 352
[26] D. J. Kang, J. S. Kim, S. W. Jeong, et al., Thin Solid Films 475 (2005) 160
[27] A. Tsukazaki, A. Ohtomo, T. Onuma, et al., Nature Materials 4 (2005) 42
[28] H. Gomez, A. Maldonado, M. de la L. Olvera, et al., Solar Energy Materials and Solar Cells 87 (2005) 107
[29] J. Lu, Z. Ye, J. Huang, et al., Applied Surface Science 207 (2003) 295
[30] T. Minami, S. Ida, T. Miyata, et al., Thin Solid Films 445 (2003) 268
[31] C. Shaoqiang, Z. Jian, F. Xiao, et al., Applied Surface Science 241 (2005) 384
[32] W. R. Grove, The Philosophical Magazine, 16 (1840) 478-482
[33] G.K.Wehner, Advances in Electronics and Electron Physics, 7 (1955) 239
[34] W. Z. Zhong, G. Z. Liu, and E. W. Shi, Science in China Series B 37 (1994) 1288
[35] W. J. Li, E. W. Shi, M. Y. Tian, et al., Journal of Materials Research 14 (1999) 1532
[36] R. S. Wagner and W. C. Ellis, Physics Letters B 4 (1964) 89
[37] P. Yang and C. M. Lieber, Journal of Materials Research 12 (1997) 2981
[38] L. Vayssieres, K. Keis, A. Hagfeldt, et al., Chemistry of materials 13 (2001) 4395
[39] R. B. Peterson, C. L. Fields, and B. A. Gregg, Langmuir 20 (2004) 5114
[40] L. E. Greene, M. Law, J. Goldberger, et al., Angewandte Chemie-International Edition 42 (2003) 3031
[41] Z. Li, X. Huang, J. Liu, et al., Materials Letters 62 (2008) 1503
[42] W. I. Park, D. H. Kim, S. W. Jung, et al., Applied Physics Letters 80 (2002) 4232
[43] W. Lee, M. C. Jeong, and J. M. Myoung, Acta Materialia 52 (2004) 3949
[44] Chik H, Liang J, Cloutier SG, et al., Applied Physics Letters 84 (2004) 3376
[45] W. I. Park, Y. H. Jun, S. W. Jung, et al., Applied Physics Letters 82 (2003) 964
[46] Y. Chen, D.M. Bagnall, H.J. Koh, et al., Journal Applied Physics 84 (1998) 3912
[47] J. M. Wang, and L. Gao, Journal Materials Chemistry 13 (2003) 2551
[48] K. Vanheusden, C. H. Seager, W. L. Warren, et al., Applied Physcis Letters 68 (1996) 403
[49] Donald A. Neamen, Semiconductor Physics & Devices, 3rd ed. McGraw Hill, (2003)
[50] Zhenan Bao and Jason Locklin, Organic Field Effect Transistors (2007)
[51] Seung H. Ko, Inkyu Park, Heng Pan, et al., Appl. Phys. Lett. 92 (2008) 154102
[52] 國立中正大學光機電所，李長紘 ”低溫溶液法製成高緻密氧化鋅奈米柱薄膜之物理特性研究” 碩士論文
[53] A.B. Djurisic, A.M.C.Ng,X.Y.Chen, Prog. Quantum Electron. 34 (2010) 191