臺灣博碩士論文加值系統

我們成功地使用磁控濺鍍系統製作了兩系列的摻銅氧化鋅薄膜，分別使用藍寶石基版與玻璃基版，並且控制銅摻雜濃度介於0~16 %之間。摻銅氧化鋅薄膜樣品皆為c軸取向的纖鋅結構，且我們沒有在剛生成的薄膜中檢測到銅及銅氧化物的訊號。在我們樣品中，銅並沒有扮演著產生鐵磁性或增強鐵磁性的角色，摻銅氧化鋅薄膜的磁性來源應為氧化鋅本質的缺陷。而在退火樣品中，我們觀察到了低溫超順磁性，這是由於薄膜內部Cu-O的平面奈米結構所造成的，從SEM量測中也能很明顯的看到薄膜表面出現大量的顆粒。

We deposited two-series Zn1-xCuxO films, which are made on sapphire and glass substrates by using the RF-sputtering. And we controlled the Cu-doped concentrate between 0 % and 16 %. Zn1-xCuxO films are c-axis-oriented wurtzite structure, and we didn’t discover any Cu-metal or Cu-oxide signal. In our samples, Cu atoms do not play the produce-ferromagnetism or enhance-ferromagnetism role. The magnetic sources of Zn1-xCuxO films should be the defects of ZnO. And in the annealing samples, we observed the low-temperature superparamagnetism, which is caused by Cu-O planar nano-structure. Scanning Electron Microscopy (SEM) also shows lots of particles in film’s surface.

第一章、氧化鋅稀磁性半導體薄膜簡介
1.1. 前言
1.2. 稀磁性半導體發展背景與磁性來源機制
1.3. 氧化鋅稀磁性半導體薄膜研究之文獻回顧
1.3.1 Undoped ZnO部分
1.3.2 Cu-doped ZnO部分
1.4. 研究動機與目的
第二章、薄膜樣品製作與分析
2.1. 薄膜樣品製備方法與原理
2.1.1. 薄膜沉積原理
2.1.2. 磁控濺鍍原理
2.1.3. 超高真空磁控濺鍍系統
2.1.4. 退火熱處理
2.2. 薄膜樣品檢測與分析
2.2.1. X光繞射儀(XRD)
2.2.2. 場發射掃描式電子顯微鏡(FE-SEM)
2.2.3. 紫外光-可見光分光光譜儀(UV-Visible Spectroscopy)
2.2.4. 拉曼光譜儀(Raman Spectroscopy)
2.2.5. X光光電子能譜儀(XPS)
2.2.6. 超導量子干涉儀(SQUID)
2.2.7. 霍爾電性量測系統(Hall effect system)
2.2.8. 磁圓偏振量測儀(MCD)
第三章、結果與討論
3.1. 改變銅摻雜濃度對於Zn1-xCuxO薄膜的影響
3.1.1. 研究說明
3.1.2. 高濃度銅摻雜之Zn1-xCuxO薄膜成長於藍寶石基板
3.1.2.a未退火處理Zn1-xCuxO薄膜之結果
3.1.2.b通氧環境下不同溫度退火Zn1-xCuxO薄膜之結果
3.1.3. 低濃度銅摻雜之Zn1-xCuxO薄膜成長於藍寶石基板
3.1.3.a未退火處理Zn1-xCuxO薄膜之結果
3.1.3.b通氧環境下不同溫度退火Zn1-xCuxO薄膜之結果
3.1.4. 低濃度銅摻雜之Zn1-xCuxO薄膜成長於玻璃基板
3.2改變製程溫度對於Zn1-xCuxO薄膜的影響
3.2.1. 研究說明
3.2.2. Zn1-xCuxO薄膜在不同製程溫度下成長於藍寶石基板
3.2.2.a未退火處理Zn1-xCuxO薄膜之結果
3.2.2.b 通氧環境下不同溫度退火Zn1-xCuxO薄膜之結果
3.2.3 Zn1-xCuxO薄膜在不同製程溫度下成長於玻璃基板
3.3不同製程氣氛對Zn1-xCuxO薄膜的影響
3.3.1. 研究說明
3.3.2. Zn1-xCuxO薄膜在不同製程氣氛下於室溫成長之結果
3.3.3. Zn1-xCuxO薄膜在不同製程氣氛下於250℃成長之結果
第四章、結論

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