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研究生:林俊旗
研究生(外文):Chun-Chi Lin
論文名稱:以射頻磁控濺鍍法製備鋁氟共摻雜氧化鋅薄膜及其特性之研究
論文名稱(外文):Fabrication and characterization of Al, F co-doped zinc oxide thin films by radio-frequency magnetron sputtering
指導教授:汪芳興
口試委員:薛富盛施能夫
口試日期:2014-07-09
學位類別:碩士
校院名稱:國立中興大學
系所名稱:電機工程學系所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2014
畢業學年度:102
語文別:中文
論文頁數:125
中文關鍵詞:薄膜氧化鋅
外文關鍵詞:Thin filmsZnOFluorine
相關次數:
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以射頻磁控濺鍍法製備氧化鋅為主的透明導電薄膜已被廣泛的應用於各種光電元件,本研究自行壓製兩種不同Al2O3摻雜量(0 wt%與1 wt%)的氧化鋅靶材,分別命名為ZnO與A1ZO,並且在濺鍍過程中分別通入兩種不同的氣體四氟化碳(CF4)和氟氣(F2) 與ZnO和A1ZO做摻雜。
本實驗可分為兩大部分,分別是摻雜CF4的薄膜與摻雜F2的薄膜,所有系列的薄膜皆是以氬氣(Argon)作為背景氣體,改變CF4/Ar及F2/Ar的流量比,固定其他參數包括背景壓力、工作壓力、電漿功率、薄膜厚度及工作距離,分別為5×10-6 Torr、5×10-3 Torr、100 W、330 nm及8 cm,在兩種不同的沉積溫度(RT、200℃)下以射頻磁控濺鍍系統沉積氧化鋅共摻雜鋁氟薄膜(AFZO)於Corning EagleXG玻璃基板上,並透過各種分析量測來探討其光電特性與結構特性。
在所有系列的薄膜中,於200℃下沉積的薄膜具有最佳的電阻率,並且在可見光範圍的穿透率皆達88%以上,光學能隙都超過3.37 eV,其中ZnO系列在摻雜0.2%的CF4時具有最佳的電阻率為7.24×10-3 Ω-cm;而A1ZO系列則是在未摻雜時具有最佳的電阻率為4.69×10-4 Ω-cm。
在所有的薄膜沉積完成後,會使用真空爐管對室溫下沉積的試片進行後退火處理,退火條件皆固定,溫度為400℃,背景壓力為10 mTorr,退火時間60分鐘。經過退火處理的薄膜,由於結晶性的改善,使得電性變佳。光學穿透率部分不論在可見光區或是近紅外光區都有小幅的提升,顯示薄膜在退火處理後有效的提升其光電與結構特性。
致謝 iii
摘要 v
Abstract vi
目錄 viii
圖目錄 xi
表目錄 xiv
第一章 緒論 1
1.1前言 1
1.2研究動機與目的 1
第二章 基礎理論與文獻回顧 3
2.1氧化鋅晶體結構與特性 3
2.2 共摻雜鋁氟之氧化鋅(AFZO)薄膜 5
2.2.1 電學性質 5
2.2.2 光學性質 6
2.3電漿基礎原理 7
2.4射頻磁控濺鍍 8
2.4.1 濺鍍原理 8
2.4.2 直流與射頻濺鍍 9
2.4.3 磁控濺鍍 10
第三章 實驗步驟與方法 11
3.1實驗製程與流程分析 11
3.2靶材製作流程 12
3.2.1 粉末配製 12
3.2.2 靶材製程 13
3.3基板切割與清洗流程 14
3.4薄膜沉積 15
3.4.1 薄膜沉積設備 15
3.4.2 共摻雜鋁氟之氧化鋅(AFZO)薄膜製程參數 15
3.4.3 真空後退火處理參數 17
3.5薄膜量測分析 18
3.5.1 薄膜結構分析 18
3.5.2 薄膜電性量測 20
3.5.3 薄膜光學量測 21
3.5.4 元素成分分析 22
3.5.5 二次離子質譜儀分析 22
第四章 結果與討論 23
4.1製程中摻雜CF4對薄膜的影響 23
4.1.1 CF4/Ar流量比對於薄膜特性之影響 23
4.1.1.1 薄膜沉積速率 23
4.1.1.2 薄膜XRD分析 24
4.1.1.3 薄膜SEM分析 27
4.1.1.4 薄膜AFM分析 31
4.1.1.5 薄膜電性分析 32
4.1.1.6 薄膜穩定度分析 36
4.1.1.7 薄膜光學分析 38
4.1.1.8 薄膜XPS分析 42
4.1.2 後退火處理對於AFZO薄膜之影響 47
4.1.2.1 後退火處理之薄膜XRD分析 47
4.1.2.2 後退火處理之薄膜SEM分析 49
4.1.2.3 後退火處理之薄膜AFM分析 52
4.1.2.4 後退火處理之薄膜電性分析 53
4.1.2.5 後退火處理之薄膜光學分析 56
4.1.2.6 後退火處理薄膜之二次離子質譜儀分析 60
4.1.2.7 後退火處理薄膜之XPS分析 67
4.2製程中摻雜F2對薄膜的影響 71
4.2.1氟氣流量比對於薄膜特性之影響 71
4.2.1.1 薄膜沉積速率 71
4.2.1.2 薄膜XRD分析 72
4.2.1.3 薄膜SEM分析 75
4.2.1.4 薄膜AFM分析 78
4.2.1.5 薄膜電性分析 80
4.2.1.6 薄膜穩定度分析 82
4.2.1.7 薄膜光學分析 83
4.2.1.8 薄膜XPS分析 87
4.2.2 後退火處理對於AFZO薄膜之影響 96
4.2.2.1 後退火處理之薄膜XRD分析 96
4.2.2.2 後退火處理之薄膜SEM分析 98
4.2.2.3 後退火處理之薄膜AFM量測 101
4.2.2.4 後退火處理之薄膜電性分析 102
4.2.2.5 後退火處理之薄膜光學分析 105
4.2.2.6 後退火處理前後薄膜二次離子質譜儀分析 109
4.2.2.7 後退火處理前後薄膜XPS分析 112
4.3四氟化碳摻雜與氟氣摻雜薄膜之比較 117
第五章 結論 118
參考文獻 120
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