臺灣博碩士論文加值系統

近幾年來奈米碳管場效電晶體（CNT-FET）在光發射研究上有重大突破，但是其相關的光學反應機制以及場效電晶體的相對電子交互做用仍舊不明。在這份論文中，我們設計雙閘極及三閘極結構之奈米碳管電晶體，藉由測試它的電子和光學反應，來分析之間的關連性。
首先，各式場效電晶體先由一般三端點量測方式進行篩選針對元件的電流對電壓特性和開關電流比不同來分類成金屬性、半導體性、和雙導通性及單極性。藉著再加入位於源極、汲極或中間的額外第二閘極和第三閘極進行測試，隨這不同的電壓和曲線圖來分類多閘極元件。
最後再進行，奈米碳管電晶體的光學反應測試，結果發現亮暗電流比會隨著單閘極和多閘極不同位置及不同電壓而變化。結果發現當上閘極電及位在元件源/汲極中間時，其亮暗電流比最高，這顯示奈米碳管聯連接源/汲極之處是對光最敏感的部份。另外發現在特定偏壓下，元件之光電流低於其未照光之暗電流，藉由對照光元件之源/汲極電流與閘極電壓的切換特性曲線圖後，觀察到元件之遲滯現象在照光下呈現內縮現象，如此造成在正閘極偏壓出現光電流下降。

In recent years, carbon nanotube field effect transistors (CNT-FETs) had great advance in emission light. But the mechanism of optical responses and its correlation with the FET’s electrical behavior are still unclear. In this thesis, we design the dual-gate and triple-gate structure in our CNT FETs and then measure their electrical and optical responses.
First, the FET is screened by traditional tri-point measurement. Based on their Id-Vds characteristics and on/off current ratio, those devices are classified as metal, semiconductor and ambipolar and unipolar type ones. Then the extra second or third narrow-gates which are located near source, drain or midpoint are biased with different voltage and the electrical curves of multiple-gate devices are collected.
Under different gate bias configuration, optical responses of the CNT FETs with single and multiple gate configurations are measured with/without a halogen light illumination. The optical performances of CNTFETs are sorted by their maximum photo-to-dark ratio. As the top-gate electrode of the device is located on the middle region of CNT, the CNTFETs have the higher optical responses then the others. It means that the source-CNT or drain-CNT interfaces are more sensible part than the CNT itself. Next, some devices show that the drain current decreases under illumination and the photo-to dark ratio is less than 1. To verify this problem, the Id-Vg curves are colleted and it is found that as the gate voltage sweeping from -10V to 10V and 10V to -10V, the “hysteresis loop” of curve is shrunk under illumination. In the “on” state of the CNTFETs（Vg > 0 and Vg is sweeping from -10V to +10V）, the drain current decreases under illumination. It means that the extra potential barriers are arisen under illumination and these barrier will retard the drain current flow.

中文摘要............................................................i
英文摘要...........................................................ii
誌謝..............................................................iv
目錄...............................................................v
表目錄............................................................vii
圖目錄...........................................................viii
第一章 導論.........................................................1
1.1 為何研究........................................................1
1.2 研究方向........................................................2
1.3 預期論點........................................................2
1.4 奈米碳管的介紹...................................................3
1.4.1 起源..........................................................3
1.4.2 發現..........................................................4
1.4.3 種類..........................................................5
1.4.4 碳管成長方法...................................................7
1.4.5 成長方法比較..................................................10
第二章 元件結構製程與測量方法........................................11
2.1 本實驗室所使用的奈米碳管來源......................................11
2.2 奈米碳管溶液的調配...............................................11
2.3 雙閘極奈米碳管電晶體製作流程......................................12
2.4 測量方法與環境..................................................15
2.5 製程儀器簡介....................................................16
第三章 雙閘極、三閘極遮罩對有無光照射的電性開關比反應....................19
3.1 序論...........................................................19
3.2 奈米碳管電晶體元件之電性開關比反應歸納.............................19
3.3 不同種類型電流特性對有無照光下的電性開關比變化......................21
第四章 單閘極、雙閘極、三閘極遮罩因有無光照射的電性對時間之影響...........27
4.1 序論...........................................................27
4.2 一般三端點結構O型元件對光的電性反應................................29
4.3 雙閘極－上閘極偏向源極結構S型元件因有無光照射對時間之影響.............32
4.4 雙閘極－上閘極偏向中間結構M型元件因有無光照射對時間之影響.............35
4.5 雙閘極－上閘極偏向汲極結構D型元件因有無光照射對時間之影響.............38
4.6 三閘極－雙上閘極偏向兩端結構S-D型元件因有無光照射對時間之影響.........41
4.7 五種結構對元件結構對亮暗電流比之效應...............................45
第五章 不同閘極遮罩因有無光對遲滯現象的影響.............................47
5.1 序論...........................................................47
5.2 五種結構對因有無照光結構對遲滯現象的影響............................48
第六章 三閘極奈米碳管電晶體之上閘極偏壓效應歸納..........................53
第七章 結論.........................................................66
參考文獻............................................................67
個人簡歷............................................................70

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