臺灣博碩士論文加值系統

　　基於不同的條件可以產生不同的結晶結構，所以藉由控制反應中的溫度、pH值、反應電位、沈積面積、反應時間等因素探討對於氧化亞銅鍍層結構的影響。結果顯示溫度與pH值的升高與變大均會造成結晶顆粒大小變大，結晶性更好。並以三個不同的反應電位來進行鍍層結構的探討，可發現當反應電位太大時，整個鍍層結構受到電流太大的影響而形成瘤狀結構。另外在沈積面積與反應時間方面，隨著不同的面積大小與時間長短，表面的鍍層結構也會隨之產生變化。
　　氧化亞銅自組裝性質近來有許多文獻進行討論，本研究是藉由電化學沈積法在固定電壓下控制反應的時間而得到緞帶狀之氧化亞銅結晶結構。且可從SEM及TEM圖上可以看出，在表面的成長方向開始改變時，可產生了許多緞帶狀結構的沈積，當反應繼續進行時，其結構會自行擴大形成交叉型的結晶結構。而從TEM及SAED圖譜可以瞭解此緞帶狀結構主要以(110)方向做橫向擴大，以(001)方向做縱向拉長，且整個緞帶狀結構是由許多小緞帶彼此相互平行堆疊而成。
　　基於氧化亞銅本身為具有2.0 eV能隙的p型半導體，極具太陽能轉換的潛力，可是因氧化亞銅的價帶位置太靠近於水的氧化電位，使得氧化亞銅在照光激發時，無法產生足夠的過電壓讓電洞將水分子氧化。因而本研究將經電沈積法所得到之氧化亞銅加入n型半導體氧化鎢組成一個Z-scheme的水分解系統，進行可見光分解水實驗，並接續以光電極方式進行光電化學分析；結果顯示可以懸浮方式在照光下分解水產生氫氣，且較高活性之氧化亞銅也具有較好之光電化學性質。

　Cuprous oxide films are electrodeposited potentiostatically at different solution temperature, pH, reaction potential, deposited area, and reaction time onto polycrystalline ITO substrate from an alkaline copper(II) lactate solution. The results show that the crystal grain size will become larger and the crystallinity will get better with increasing the reaction temperature and pH. Three different reaction potentials can be used to discuss the effects of crystal structure, and the results show that the lump structure can be obtained due to the large current from large reaction potential. In addition, with changing the deposited area and reaction time can also affect the crystal structure of deposition surface.
　In these few years, there are some studies discussing the self-assembly property of cuprous oxide, and in this work we use electrochemical deposition method under constant potential to produce the ribbon structure of cuprous oxide by controlling the reaction time. It can be observed from SEM and TEM images that the ribbon structure appears as the orientation of the layers start changing and it will enlarge itself to a crosshatch structure with the reaction proceeds. From TEM and SAED patterns we can realize that almost all of the nanoribbons are parallel with each other and grow along (110) orientation horizontally and (001) orientation vertically.
　Cuprous oxide, a p-type semiconductor with a bandgap of ca. 2.0 eV, has attracted interest because of its potential applications in solar energy conversion. However, there is almost no overpotential available for water oxidation on illuminated cuprous oxide because the valence band edge of cuprous oxide is close to the oxidation potential of water. Therefore, we suggest that cuprous oxide prepared from electrodeposition could serve as a p-type semiconductor and in combination with an n-type semiconductor tungsten oxide to proceed with a so-called Z-scheme water splitting mechanism. The p/n particle suspension reaction can also be simulated by a p/n photoelectrolysis cell to discuss the photoelectrochemical properties of cuprous oxide. H2 can be produced in the particle suspension system, and the ED25 film exhibited a larger photocurrent, in consistent with the results of particle suspension system.

中文摘要…………………………………………………………………………I
Abstract…………………………………………………………………………II
致謝………………………………………………………………………………IV
目錄………………………………………………………………………………V
表目錄……………………………………………………………………………VIII
圖目錄……………………………………………………………………………IX
第一章 緒論……………………………………………………………………1
1-1. 氧化亞銅(Cu2O)簡介……………………………………………………1
1-2. 氧化亞銅(Cu2O)自組裝性質……………………………………………2
1-3. 氧化亞銅(Cu2O)光觸媒性質……………………………………………2
1-4. 研究動機…………………………………………………………………3
1-5. 本論文架構………………………………………………………………4
第二章 理論說明與文獻回顧…………………………………………………7
2-1. 電化學沉積法(Electrodeposition)……………………………………8
2-2. 鍍層的成核、成長………………………………………………………8
2-2-1. 表面的原子結構………………………………………………………8
2-2-2. 反應過電位對成核的影響……………………………………………9
2-2-3. 成核、成長的方式……………………………………………………10
2-2-4. 結晶結構理論…………………………………………………………11
2-2-5. 表面結晶性分析………………………………………………………11
2-3. 電化學沈積氧化亞銅(Cu2O)……………………………………………12
2-4. 自組裝結構之文獻論述…………………………………………………13
2-5. 光觸媒……………………………………………………………………14
2-5-1. 光觸媒催化反應………………………………………………………14
2-5-2. 常見的半導體光觸媒…………………………………………………14
2-5-3. 半導體電荷傳送與能帶彎曲…………………………………………15
2-5-4. 光電流的產生…………………………………………………………15
2-5-5. 平帶電位………………………………………………………………15
2-5-6. 光電解電池……………………………………………………………16
第三章 實驗方法與設備………………………………………………………33
3-1. 實驗用藥品與器材及實驗設備…………………………………………33
3-2. 氧化亞銅(Cu2O)製備……………………………………………………33
3-3. 氧化鎢(WO3)電極的製作方式…………………………………………34
3-4. 光電化學分析……………………………………………………………34
3-5. 光電化學裝置……………………………………………………………35
3-6. 材料分析…………………………………………………………………35
3-6-1. XRD繞射分析…………………………………………………………36
3-6-2. SEM結構分析…………………………………………………………36
3-6-3. TEM微結構分析………………………………………………………37
3-6-4. HR-TEM微結構分析……………………………………………………37
3-6-5. 紫外線─可見光吸收光譜儀…………………………………………37
3-6-6. 氣相層析儀GC (gas chromatography)……………………………38
第四章 結果與討論……………………………………………………………46
4-1. 氧化亞銅(Cu2O)鍍層結構之探討………………………………………46
4-1-1. 溫度對氧化亞銅(Cu2O)鍍層結構之影響……………………………46
4-1-2. pH對氧化亞銅(Cu2O)鍍層結構之影響………………………………46
4-1-3. 反應過電位對氧化亞銅(Cu2O)鍍層成長之影響……………………47
4-1-4. 沈積面積對氧化亞銅(Cu2O)鍍層成長之影響………………………47
4-1-5. 庫倫量(反應時間)對氧化亞銅(Cu2O)鍍層成長之影響……………48
4-2. 氧化亞銅(Cu2O)自組裝性質探討………………………………………48
4-3. 氧化亞銅(Cu2O)光觸媒性質探討………………………………………51
4-3-1. 電鍍結果與分析………………………………………………………51
4-3-2. 氧化亞銅(Cu2O)觸媒結構與性質分析………………………………52
4-3-3. 光觸媒反應測試………………………………………………………54
第五章 結論……………………………………………………………………77
參考文獻………………………………………………………………………79
自述……………………………………………………………………………83

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