臺灣博碩士論文加值系統

在光通訊中，利用量子史塔克效應所製成的電致吸收光電調變器是十分重要的元件。另一方面，鍺與矽同是四族元素，擁有良好的批配，因此利用矽鍺做成的元件可以與以矽為基材的電子元件結合，能進一步地提升電子元件之間的傳輸效能。

在本篇論文裡，我們分析討論了波函數的分佈和對光子的吸收受非對稱量子井結構的影響及結果。並從中發現，當導帶和價帶的波函數侷限在不同位置時會有藍位移的現象產生。為此，我們提出了一個設計準則，使得元件擁有大幅度的藍位移。最後，我們依循該準則並利用模擬來驗証。

Optical electroabsorption modulators using quantum confinement Stark effect are important devices in optical commincation. Ge is group IV element that is compatible with Si process. It is possible to integrate Ge/SiGe quantum well devices with integrated circuite.

In this thesis, we study the eigen state of carrier and analyze the electroabsorption in an asymmetric quantum well. We find out that if the barrier height of carriers in conduction band and valance band are different, there exists blue shift when electric field is applied. We further suggest a design rule for engineering the blue shift, and with this rule, we demonstrate an example of elctroabsorption modulators with Ge/SiGe asymmetric quantum well.

1 Preface
1.1 Motivation

2 Introduction
2.1 Exciton
2.2 Quantum Confined Stark Effect
2.3 Optical Absorption Spectrum
2.4 Wave Equation in Quantum Well

3 Theoretical Model
3.1 Wave Function
3.1.1 Energy Band Diagram
3.1.2 Transfer Matrix
3.1.3 Variational Method
3.2 Absorption Spectrum with Exciton Effects in Quantum Well

4 Case Study of Asymmetric Quantum Well Absorption
4.1 Confinement and Eigen Energy of Wave Function
4.1.1 Square Quantum Well(SQW)
4.1.2 Asymmetric Quantum Well (ASQW)
4.2 OpticalAbsorption
4.2.1 SquareQuantumWell(SQW)
4.2.2 Asymmetric Quantum Well (ASQW)
4.3 EAM with Si/Ge/SiGe/Si
4.3.1 Design Rule for Blue Shift Modulator
4.3.2 Simulation Results of EAM with Si/Ge/SiGe/Si ASQW

5 Summary
5.1 Conclusion
5.2 FutureWork

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