臺灣博碩士論文加值系統

由於無線通訊和光電的領域快速的發展，使得表面聲波元件中的共振器，雙功器，感應器有很大的市場需求。而如LiNbO3、LiTaO3和石英的結晶體常用於表面聲波元件之基材上，然而這些材料之表面聲波速率較低。最近ZnO/Diamond結構引起許多注意和大量的投資，因為鑽石能產生很高的表面聲波速率(大約10000m/s)。但CVD鑽石之優異性質也使其極難以一般加工方式成型並得到所需形狀與良好表面。本研究是以熱機械式來磨、拋以CVD法成長在碳化鎢基材上之鑽石膜，探討熱機械式參數如線速度、正向負荷、研磨溫度、加工時間、含碳量等與表面形貌及顯微結構之關係。以掃描式電子顯微鏡觀察鑽石加工表面形貌變化；以EDS能量散佈分析儀分析表面成分。研究結果發現熱機式拋光能有效的移除鑽石膜(以450 oC and 5.7m/s在30分鐘研磨下，鑽石膜被移除4.8m而Ra<50nm)，熱機式拋光鑽石之材料移除率隨溫度、正向負荷、線速度、加工時間增加而增大，然而拋光盤含碳量高時會使材料移除率降低。

Owing to the rapid development in the mobile telecommunication and optoelectronic area, SAW(Surface Acoustic Wave) devices such as SAW-Resonator, SAW-Duplexer and SAW-Sensors are in great demand. Crystals such as LiNbO3, LiTaO3 , and Quartz are frequently used as the substrate material for SAW devices. However, the surface acoustic wave velocity obtainable on these materials is relatively low. ZnO/Diamond structure has attracted a lot of attentions and heavy investment recently just because diamond has the capability of producing very high surface acoustic wave (around 10000m/s). But, it is these extraordinary chemical/mechanical properties which make diamond an ideal material for many applications make it a material extremely difficult to be machined to the specified shape and surface roughness. In this study, the CVD method was employed to produce diamond films on tungsten carbide. Hot polishing experiments were then conducted on the obtained diamond films. The material removal mechanisms, microstructure of the machined surface and related machining conditions such as sliding speed, normal load, temperature, polishing time and carbon concentration were also investigated. Scanning electron microscope (SEM)、energy dispersive spectrometer (EDS) were used to observe and analyze the surfaces topography. The results showed that thermo- mechanical polishing was able to remove the diamond film very effectively (4.8μm deep of diamond film was removed in 30 minutes when polishing at 450oC and 5.7m/s with finished Ra<50nm ). The material removal rate was found to increase with temperature, normal pressure, sliding speed and polishing time. However, the removal rate gets lower while the carbon concentration of the polishing pad gets higher.

1. 序論
1-1 前言
1-2 研究背景
1-3 研究動機與目的
2. 文獻回顧與理論基礎
2-1 拋光機構
2-1-1 微裂
2-1-2 將鑽石轉換成石墨
2-1-3 汽化
2-1-4 濺射
2-1-5 化學反應
2-2 拋光方法
2-2-1 機械式拋光
2-2-2 化學輔助機械式拋光與平坦化
2-2-3 熱化學式拋光
2-2-4 雷射表面改善
2-2-5 離子束拋光
2-2-6 電漿蝕刻
2-3 熱化學式拋光方法之特點
3. 研磨鑽石實驗
3-1 理論分析
3-2-1碳-過渡金屬間反應機構
3-2-2擴散機構
3-2-3鑽石-石墨壓力轉換機制
3-2 實驗規劃
3-3 不同含碳量金屬研磨鑽石
3-3-1 鑽石研磨設備
3-3-2 實驗步驟
3-4 平面研磨鑽石膜表面
3-4-1研磨鑽石設備
3-4-2鑽石平面研磨原理
3-4-3實驗步驟
3-5 分析檢測儀器
4. 結果與討論
4-1不同含碳量金屬研磨鑽石之結果影響
4-2平面研磨時線速度對研磨結果之影響
4-3平面研磨時正向負荷對研磨結果之影響
4-4鑽石晶圓平面研磨結果之討論
4-5鑽石移除機制之探討
5. 結論
參考文獻
附表A實驗材料之各項物理性質
附表B石墨之高溫特性
附表C鑽石之物理性質

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