臺灣博碩士論文加值系統

本研究利用銀鏡反應經由層流轉換圖案技術在微流道內製作3D電極，並將此晶片應用在微奈米粒子分離的生醫晶片上，整個製程僅需一道光罩即可製作完成，別於以往繁雜步驟並可快速沉積出電極。本粒子分離晶片是利用介電泳原理，將粒子因分離後達到純化的效果。
此實驗使用自行調配的銀鏡反應溶液並注入已設計好之微流道內，控制流體的體積流率使達到一最佳的沉積條件，並成功形成兩條平行3D立體電極。本研究之分離物使用多壁奈米碳管，因奈米碳管本身具有導體與半導體性質，吾人將透過此立體電極來和平面電極做分離後之純化度比較，其利用拉曼光譜量測、 值比較與電流量測做純化度驗證。從實驗結果可發現，經3D電極作用後的導體奈米碳管其 值降到0.71比使用平面電極來的低，且經3D電極作用後的導體奈米碳管電流值也有明顯提高，證實3D電極比平面電極更能有效純化奈米碳管。
本研究成功發展出快速製作立體電極的。由於3D電極有高厚度，因此可降低操作電壓與減少焦耳熱等優點，而此開發建立在生物晶片上且能有效達到純化效果，對於未來應用在生物粒子分離有很大的幫助。

A high throughput micro-nano-particle separation device with 3D-electrodes was fabricated in this study.The 3D electrodes were fabricated to provide dielectrophoresis (DEP) force by using the combination of silver mirror reaction and microfluidic laminar flow patterning technique.Only one photomask was required during the fabrication process without additional vacuum-based metal deposition processs. Silver mirror reaction solutions were prepared and injected separately into a microchannel. The optimal deposition condition was tested and two parallel 3D electrodes were successfully formed at the liquid –liquid interfaces. Multi-walled carbon nanotubes (MWCNTs)were purified by DEP force according to the electrical characteristics. Raman spectroscopy, ratio, and current-voltage measurements were utilized to compare the purification performance between 3-D electrodes and plannar electrodes. From the experimental results, when we used 3D electrodes to pure MWCNTs, the ratio of conducting MWCNTs could be reduced to 0.71. It was lower than ratio of using planar electrodes. Moreover, current of conducting MWCNTs was increased by 3D electrodes. It shows that 3D electrodes could provide higher purification.
In this study, we have developed a simple and rapid method to deposit 3D electrodes. The advantages of 3D electrodes are the reduction of applied voltage and Joule heating due to high thickness. This work has been able to attain higher purification for such a lap-on-a-chip application.

論文口試委員審定書

致謝

摘要

Abstract

目錄.......................................................I

表目錄....................................................IV

圖目錄.....................................................V

符號說明................................................VIII

第一章 緒論.............................................1
1-1 研究背景.........................................1
1-2 文獻回顧.........................................3
1-2-1 平面介電泳力的發展與應用.........................3
1-2-2 3D介電泳力的發展與應用...........................6
1-3 研究動機與目的...................................7

第二章 介電泳理論.......................................9
2-1 誘導偶極矩.......................................9
2-2 介電泳力........................................11
2-2-1 介電泳數學模式..................................11
2-2-2 傳統介電泳數學模式..............................12
2-3 其他影響力之探討................................13
2-3-1 電泳力..........................................13
2-3-2 布朗運動........................................13
2-3-3 拉曼光譜原理....................................13

第三章 晶片製作與實驗架設..............................15
3-1 微流道晶片製作..................................16
3-1-1 微流道設計......................................16
3-1-2 光罩選擇與製作..................................17
3-2 基材清潔........................................17
3-3 矽晶圓微流道製程................................18
3-3-1 黃光微影製程....................................19
3-3-2 乾蝕刻製程......................................20
3-4 矽晶圓微流道之封裝..............................21
3-4-1 微流道晶片注入孔開孔............................21
3-4-2 矽晶圓與7740玻璃接合............................22
3-5 平面電極晶片製作流程............................23
3-5-1 電極蒸鍍........................................23
3-5-2 平面電極微影與蝕刻製程..........................25
3-6 實驗溶液調配....................................26
3-6-1 銀鏡反應........................................26
3-6-2 表面改質溶液....................................28
3-6-3 奈米碳管溶液....................................28
3-7 實驗設備與儀器架設..............................29

第四章 實驗結果與討論..................................31
4-1 微流道晶片製作結果..............................31
4-2 3D電極製作結果..................................32
4-2-1 3D電極製作流程與注意事項........................32
4-2-2 兩種類型之電極製作結果..........................34
4-3 利用模擬軟體模擬電場............................35
4-4 利用奈米碳管比較立體與平面電極之純化效果........36
4-4-1 頻率對奈米碳管的影響............................36
4-4-2 利用拉曼光譜比較純化效果........................37
4-5 ID/IG值比較.....................................39
4-6 I-V curves量測..................................40

第五章 結果與未來展望..................................41
5-1 結論............................................41
5-2 未來展望........................................43

參考文獻..................................................44

表目錄
表4-1 多壁奈米碳管之頻譜圖................................47
表4-2 平面電極與3D電極之ID/IG值之比較.....................47

圖目錄
圖1-1 於頻率500kHz時，流體在電極上方之作用示意圖(N. G.
Green, H. Morgan, 1998).............................48
圖1-2 藉由粒子不同的介電常數和密度可以利用負介電泳力讓粒
子漂浮至不同高度，注入流體產生拋物線型的速度輪廓，
分離不同粒子(Juliette Rousselet et al., 1998)..........48
圖1-3 介電泳過濾器原理 (a)未加電壓，懸浮粒子流過電極、
(b)施加電壓，粒子吸附在介電珠上
(Guangbin Zhou et al., 2002)........................49
圖1-4 連續介電泳分離晶片示意圖(Il Doh et al., 2005).......49
圗1-5 介電泳力分離細胞示意圗(Youlan Li et al., 2007)......50
圗1-6 奈米碳管拉曼光譜(Ralph Krupke et al., 2003).........50
圖1-7 多壁奈米碳管經介電泳力實驗圖 (a)負介電泳力、(b)正介
電泳力 (Chehung Wei et al.,2008)....................51
圖1-8 奈米碳管拉曼光譜 (a)正介電泳力、(b)負介電泳力
(Chehung Wei et al., 2008)..........................51
圖1-9 經過介電泳力後用以驗證的方式(Chehung Wei et
al.,2008)...........................................52
圖1-10 J. Voldma等人所設計的介電泳裝置(2001)..............53
圖1-11 Ciprian Iliescu等人利用高參雜的矽晶圓所做的3D介電泳
晶片(2004).........................................53
圖1-12 Kuan-Ying Lua等人使用電鑄方式所製作的3D電極(2006)..54
圖1-13 Lisen Wang等人所設計的微流道3D電極(2007............55
圖1-14 Paul J. A. Kenis等人利用微流道技術結合銀鏡反應或注
入蝕刻液在流道內製作電極(1999).....................56
圖2-1 粒子極化能力遠大於溶液時，其電偶極方向與電場方向相
同..................................................57
圖2-2 電解溶液極化能力大於粒子時，其電偶極方向與電場方
向相反..............................................57
圖2-3 (a)粒子偏極化程度大於溶液，則受正介電泳力吸引、(b)粒
子偏極化程度小於溶液，則受負介電泳力排斥............58
圖3-1 晶片製作流程圖......................................58
圖3-2 第一種類型的微流道晶片光罩..........................59
圖3-3 第一種類型微流道晶片沉積方式示意圖..................60
圖3-4 第二種類型的微流道晶片光罩..........................61
圖3-5 第二種類型微流道晶片沉積方式示意圖..................61
圖3-6 微流道製程步驟示意圖................................62
圖3-7 小型鑽床搭配鑽石磨棒................................62
圖3-8 平面電極晶片光罩圖..................................63
圖3-9 平面電極製程步驟示意圖..............................63
圖3-10 平面電極成品示意圖.................................64
圖3-11 調配完成的多壁奈米碳管溶液.........................64
圖4-1 第一種微流道晶片實體圖..............................65
圖4-2 第二種微流道晶片實體圖..............................65
圖4-3 出入水孔示意圖......................................66
圖4-4 3D介電泳晶片完成圖..................................66
圖4-5 第一種類型電極沉積結果圖............................67
圖4-6 將晶片切開後所觀察到的立體結構......................68
圖4-7 利用氣泡來驗證銀線確實產生一壁面....................68
圖4-8 第二種類型電極沉積結果圖............................69
圖4-9 將晶片切開後觀察到的結構圖..........................70
圖4-10 模擬電場最大值與發生處.............................70
圖4-11 使用平面電極產生正DEP所收集到的奈米碳管............71
圖4-12 使用3D電極產生正DEP所收集到的奈米碳管..............72
圖4-13 使用拉曼光譜量測正介電泳力所收集之導體奈米碳管.....73
圖4-14 使用拉曼光譜量測負介電泳力所收集之半導體奈米碳管...74
圖4-15 ID/IG值比較圖......................................75
圖4-16 CM factor曲線圖(Chehung Wei, 2009).................75
圖4-17 量測導體奈米碳管之電流值...........................76

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