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研究生:郭文傑
研究生(外文):Wen-Chieh Kuo
論文名稱:一價銅錯化合物中配位基分子之表面化學研究及對於銅薄膜沈積製程之意義
論文名稱(外文):Investigation of Ligand Surface Chemistry: Implications for the Use of β-Diketonate Copper(I) Complexes as Precursors for Copper Thin-film Growth
指導教授:蔣昭明
指導教授(外文):Chao-Ming Chiang
學位類別:碩士
校院名稱:國立中山大學
系所名稱:化學系研究所
學門:自然科學學門
學類:化學學類
論文種類:學術論文
論文出版年:2002
畢業學年度:90
語文別:英文
論文頁數:58
中文關鍵詞:三甲基矽烷乙烯銅(111)單晶超高真空2-乙烯基-3-己炔
外文關鍵詞:TPD/RMHYVTMShfacHUHVCu(111)RAIRS
相關次數:
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Two most useful families of copper CVD precursors that have been utilized widely are the Cu(I) and Cu(II) β-diketone complexes. The Cu(II)precursors require the use of an external reducing agent such as hydrogen to
deposit copper films, i.e. CuII(β-diketonate)2 + H2 → Cu0+2 β-diketonate.
The Cu(I) precursors deposit pure copper films without the use of an external
agent via a disproportionation reaction that produces a Cu(II)β-diketonate in
conjunction with other organic byproducts, i.e. 2CuI(β-diketonate)L →
Cu0+ CuII(β-diketonate)2+2L where L is a typical Lewis base neutral ligand.
However, Do those ligands resulting from the dissociation of the precursors
simply desorb intact from the substrate or the growing films, or react further on the surface? To understand the surface chemistry of these ligands may provide better knowledge for designing more superior precursors and improvement of fabrication processes.
Cu(hfac)(VTMS) and Cu(hfac)(MHY) are the most promising Cu(I) precursors, as shown in Scheme 1.1. Here we report studies on the chemistry
of VTMS, MHY and hfacH on a Cu(111) surface. It should be noted that the hfacH is the simplest molecule containing the hfac, so we use it as a reference for β-diketonate ligand. The Cu(111) single crystal was used to mimic the reactivity of these ligands on a growing Cu film during copper CVD. In situ analysis of ligand surface chemistry is carried out by TPD/R
(temperature-programmed desorption/reaction) and RAIRS (reflection adsorption infrared spectroscopy) to elucidate plausible reaction mechanisms by which ligands decompose and eventually lead to impurity incorporation
into the growing films, and to suggest means of minimizing such reactions.
Chapter 1 Introduction………………………………………….1
Chapter 2 Experimental Section…………………………….4
Chapter 3 Results
3.1 VTMS
3.1.1 TPD/R Study of VTMS on Cu(111)………………………..6
3.1.2 RAIRS Study of VTMS on Cu(111)………………………14
3.2 MHY
3.2.1 TPD/R Study of MHY on Cu(111)………………………..20
3.2.2 RAIRS Study of MHY on Cu(111)……………………….25
3.3 hfacH
3.3.1 TPD/R Study of hacH on Cu(111)………………………...31
3.3.2 RAIRS Study of hacH on Cu(111)………………………..39
Chapter 4 Discussion
4.1 Formation of Acetylene from VTMS via C-Si Bond
Scission and β-hydride Elimination…………………...46
4.2 Strong MHY-surface Interactions Facilitate CVD …..49
4.3 Mimicking hfac Ligand by Adsorption of hfacH on
Cu(111)……………………………………………………51
Chapter 5 Conclusions…..…………………………………….54
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