臺灣博碩士論文加值系統

本論文分成兩個部分，第一部分利用單一靶材的銅銦鎵硒（CIGS）四元合金靶濺鍍銅銦鎵硒薄膜，並進行不同化學溶液之表面蝕刻處理製程；第二部分是利用化學水浴沉積法成長ZnS薄膜，並利用ZnS當作CIGS太陽能電池的緩衝層，製作元件並量測效率。
　　首先探討不同的基板成長條件濺鍍單一靶材CIGS，並對其表面做蝕刻處理，以用不同的溶液，以求能使其表面平整化。實驗發現鍍膜時使用高基板溫度，高瓦數來鍍CIGS膜，會有較佳的成膜效果，且在經過表面處理後，顆粒確實會有減少的現象。
　　接著，利用化學水浴沉積法沉積ZnS薄膜，本實驗探討不同酸鹼值，成長溫度，緩衝溶液與熱退火對薄膜狀況之影響，並以得到的較佳參數來製備元件。
　　最後，以不同厚度的ZnS薄膜來探討元件之效率，發現在ZnS沉積148nm時可得到較佳的效率。由此可知單一靶材鍍製CIGS薄膜是一種可行的鍍膜方式，利用此種方式，便能大大的降低製作CIGS太陽能電池的成本。

This study employed a copper indium gallium selenium (CIGS) quaternary alloy target to sputter CIGS thin films, where the surface of the CIGS thin films was etched using various solution methods. The ZnS thin film was then deposited by chemical bath deposition (CBD) as the CIGS device buffer layer, and the efficiency of the CIGS device was measured. Various growth conditions for sputtering CIGS single targets were investigated. Different etching solutions were applied in order to achieve a smooth surface, and then the thin films were tested for surface smoothness. A higher substrate temperature and higher power were found to enhance the quality of the thin films. The ZnS thin film was then deposited using the CBD method. The effects of pH value, growth temperature, buffer solution, and annealing process were studied, and optimal parameters were applied in the preparation of the CIGS thin films. The effect of ZnS thickness on efficiency was then investigated. A ZnS thickness of 148nm achieved the highest efficiency. This study demonstrated the feasibility of the CIGS single target sputtering process, which may be able to reduce the cost of manufacturing CIGS solar cells.

摘要 I
Abstract II
誌謝 III
圖目錄 VII
表目錄 IX
第一章 緒論 1
1-1 前言 1
1-2 太陽光頻譜 2
1-3 太陽能電池發展 4
1-4 不同太陽能電池簡介 5
1-4-1 第一代太陽能電池 8
1-4-2 第二代太陽能電池 10
1-4-3 第三代太陽能電池 13
1-5 CIGS太陽能電池發展 14
1-6 研究動機 15
第二章 CIGS薄膜與太陽能電池介紹 17
2-1 太陽能電池發電原理 17
2-2 CIGS薄膜特性 21
2-2-1 CIGS薄膜結構 21
2-2-2 CIGS薄膜電特性 23
2-3 CIGS薄膜製備 26
2-4 CIGS太陽能電池元件介紹 30
2-4-1 CIGS太陽能電池基板 31
2-4-2 CIGS太陽能電池背電極 32
2-4-3 CIGS太陽能電池主吸收層 32
2-4-4 CIGS太陽能電池緩衝層 34
2-4-5 CIGS太陽能電池窗口層 35
2-4-6 CIGS太陽能電池電極 36
2-4-7 結論 37
第三章 實驗分析與儀器介紹 38
3-1 實驗與分析儀器介紹 38
3-1-1磁控濺鍍系統（Sputter） 38
3-1-2 場發式掃描電子顯微鏡（FE-SEM） 39
3-1-3 能量分散光譜儀（Energy Dispersive X-ray） 41
3-1-4 紫外光-可見光（UV-Vis）吸收光譜儀 42
3-1-5 X-ray 繞射儀（X-ray diffraction） 42
3-1-6 霍爾效應量測（Hall effect measurement） 42
3-1-7 X-ray 光電子能譜（X-ray photoelectron spectroscopy） 44
3-1-8 光致發光偵測系統（Photoluminescence） 45
3-1-9 太陽光模擬器（Solar simulator） 45
3-2實驗簡介 45
3-2-1 單一靶材製作CIGS薄膜 45
3-2-2 CIGS薄膜表面蝕刻 47
3-2-3 ZnS薄膜製備 48
第四章 CIGS薄膜製備 53
4-1 單一靶材製作CIGS薄膜 53
4-1-1 實驗步驟 53
4-1-2 結果與討論 54
4-2 CIGS薄膜表面蝕刻 62
4-2-1 實驗步驟 62
4-2-2 結果與討論 63
4-3 結論 71
第五章 緩衝層與元件製備與分析 73
5-1 ZnS薄膜製備 73
5-1-1 實驗步驟 73
5-1-2 結果與討論 75
5-2 太陽能電池元件 96
5-2-1 實驗步驟 96
5-2-2 結果與討論 100
第六章 結論與未來展望 104
參考文獻 106

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