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研究生:黃崇涵
研究生(外文):Chung-Han Huang
論文名稱:鋯鈦酸鉛(PbZr0.5Ti0.5O3)薄膜沉基於Pt/Ti薄膜之研究
論文名稱(外文):Fabrication and characterization of PZT thin film on Pt/Ti layer
指導教授:張忠誠張忠誠引用關係
指導教授(外文):Chung-Cheng Chang
學位類別:碩士
校院名稱:國立臺灣海洋大學
系所名稱:電機工程學系
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2004
畢業學年度:92
語文別:中文
論文頁數:99
中文關鍵詞:鋯鈦酸鉛白金超音波
外文關鍵詞:PZTPtTiultrasonic
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  • 被引用被引用:1
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  • 下載下載:31
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摘 要

本論文的研究主題為鋯鈦酸鉛薄膜製作之研究,並使用白金當下電極、鈦當緩衝層。鈦、白金及鋯鈦酸鉛經由射頻磁控濺鍍法沉基於矽基板上。經由適當的沉基條件及退火程序,我們可發現較佳的鈣鈦礦結構。實驗中我們藉由X光繞射儀(XRD)來分析薄膜結晶構造,利用電子顯微鏡(SEM)來分析薄膜表面型態及剖面的狀況,利用能量分散光譜儀(EDS)分析薄膜內成分組成百分比。本實驗使用不同的沉基時間、不同的退火溫度、不同的退火時間,來調整緩衝層(鈦)及下電極(白金)的狀態,藉此探討如何沉積出較佳品質的鈣鈦礦結構。
沉積鈦及白金薄膜於矽基板上,鈦及白金於退火程序中會與基板產生反應。我們發現當鋯鈦酸鉛中矽含量增加時,鈣鈦礦結構的特性就會下降。藉由我們調整鈦和白金的沉積時間、退火溫度、退火時間,我們使得鋯鈦酸鉛沉積於Pt/Ti薄膜上時,矽的含量減少,使的PZT之特性改善。
ABSRTRACT

The main object of this thesis concentrates on the research of PZT thin film properties based on the Pt/Ti electrode. Pt, Ti and PZT are all prepared by the radio frequency magnetron sputter system. During suitable annealing process, PZT exhibited the highly (110) oriented perovskite structure. The crystalline of Ti film, Pt film and PZT film are analyzed by the XRD, the surface morphology and cross-section are analyzed by the SEM, and element composition was observed by EDS. In this experiment, using different deposition time, annealing temperature and annealing duration to prepare the Ti and Pt thin film.
Prepare the Pt or Ti film on the silicon substrate; a chemical reaction is easily to produce after annealing process. If the PZT chemical composition of Si deposition on PZT thin film is increases the properties of piezoelectric is worse. When PZT on the Pt/Ti layer that the silicon doping can be reduced. The reduced Si doping PZT thin film will have better properties if we adjust the annealing parameters about Pt/Ti layer.
Contents
Chapter 1 Introduction ……………………………………………1

1-1 The basis of ultrasonic sensor………………………………1
1-2 Overview of piezoelectric materials ………………………2
1-3 Thesis Outline……………………………………………………5

Chapter 2 Fabrication of PZT thin film on Pt/Ti ultrasonic acoustic sensors………………………………………………………7

2-1 Introduction………………………………………………………7
2-2 Thin film ultrasonic sensor …………………………………7
2-3 The bottom electrode on the PZT thin film ………………8
2-4 Properties of PZT Thin Film …………………………………9
2-5 PZT thin film deposition ……………………………………10
2-6 Summary of deposition condition and annealing condition………………………………………………………………11
2-7 The Fabrication step of PZT thin film ultrasonic sensor… ………………………………………………………………12

Chapter 3 Characteristics of PZT thin film on Pt/Ti layer……………………………………………………………………14

3-1 Introduction ……………………………………………………14
3-2 Crystalline analyses by X-Ray………………………………14
3-2.1 Annealing temperature effect of Ti layer:……………15
3-2.2 Annealing duration effect of Ti layer:… ……………16
3-2.3 Deposition time effect of Ti layer:……………………16
3-2.4 Annealing temperature effect of Pt layer:……………17
3-2.5 Annealing duration effect of Pt layer: ………………17
3-2.6 Deposition time effect of Pt layer:……………………18
3-3 FWHM analysis of PZT thin film ……………………………18
3-3.1 Annealing temperature effect of Ti layer:……………19
3-3.2 Annealing duration effect of Ti layer: ………………19
3-3.3 Deposition time effect of Ti layer:……………………19
3-3.4 Annealing temperature effect of Pt layer:……………20
3-3.5 Annealing duration effect of Pt layer: ………………20
3-3.6 Deposition time effect of Pt layer:……………………20
3-4 Surface morphology observe by SEM…………………………21
3-4.1 Annealing temperature effect of Ti layer:……………22
3-4.2 Annealing duration effect of Ti layer: ………………23
3-4.3 Deposition time effect of Ti layer:……………………23
3-4.4 Annealing temperature effect of Pt layer:……………23
3-4.5 Annealing duration effect of Pt layer: ………………23
3-4.6 Deposition time effect of Pt layer:……………………24
3-5 cross-section observe by SEM ………………………………24
3-6 EDS analysis of PZT, Pt and Ti thin films………………24
3-6.1 Annealing temperature effect of Ti layer:……………25
3-6.2 Annealing temperature effect of Pt layer:……………26
3-6.3 Annealing duration effect of Ti layer: ………………26
3-6.4 Annealing duration effect of Pt layer: ………………26
3-6.5 Deposition time effect of Ti layer:……………………27
3-6.6 Deposition time effect of Pt layer:……………………27
3-7 Measurement resistivity of Pt/Ti layer …………………27
3-7.1 Annealing temperature effect of Ti layer ……………29
3-7.2 Annealing duration effect of Ti layer: ………………29
3-7.3 Deposition time effect of Ti layer:……………………29
3-7.4 Annealing temperature effect of Pt layer:……………30
3-7.5 Annealing duration effect of Pt layer: ………………30
3-7.6 Deposition time effect of Pt layer:……………………30
3-8 Ferroelectric properties ……………………………………30
3-9 Piezoelectric properties ……………………………………32
3-9.1 Annealing temperature effect of Ti layer:……………34
3-9.2 Annealing duration effect of Ti layer: ………………34
3-9.3 Deposition time effect of Ti layer:……………………35
3-9.4 Annealing temperature effect of Pt layer:……………35
3-9.5 Annealing duration effect of Pt layer: ………………35
3-9.6 Deposition time effect of Pt layer:……………………36

Chapter 4 Conclusion and Suggestion …………………………37
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