臺灣博碩士論文加值系統

本實驗乃是利用Sputtering 和 reactive sputtering 兩種不同的製程，以產生類鑽碳薄膜(Diamond-like carbon thin film)，含氫類鑽碳薄膜(a-D:H)，含金屬鉑之碳薄膜(Me-DLC)。
　　在以往的類鑽碳薄膜往往因為導電性不好而限制其電性方面的應用，本實驗採用composite thin film的方式改善類鑽碳電性，在應用上面希望能結合以往類鑽碳的機械性質，在加上電性的改善，而讓材料的應用更廣。
　　在本實驗中分析的儀器有電子顯微鏡 (Scanning Electronmicroscopy)，X-ray，穿透式電子顯微鏡，拉曼光譜儀，四點探針，電子束微探儀 (EPMA，electron prob for microanalysis)等。
　　在實驗的觀察方面，類鑽碳的在矽晶片上面的應力似乎很強，而在加入氫或是參雜金屬對於在電子顯微鏡下的影響是接下來會討論的地方。在碳的薄膜中，鉑金屬的確明顯的改善類鑽碳薄膜的電性，且在穿透式電子顯微鏡下發現，鉑金屬存在的形式大小和含量對於電性的影響，在接下來的章節中會進一步的作更深入的探討。

總目錄
頁次
中文摘要………………………………………………………………..Ⅰ
英文摘要………………………………………………………………..Ⅱ
總目錄…………………………………………………………………..Ⅲ
圖目錄……………………………………………………………….….Ⅳ
表目錄…………………………………………………………………..Ⅴ
第一章前言…………………………………………………………1
第二章文獻回顧……………………………………………………2
2-1類鑽碳薄膜之簡介……………………………………2
2-1-1 碳膜之總類與特性………………………………2
2-1-2 不同碳膜的製程 ………………………………3
2-1-3 碳膜的成分與微結構分析………………………4
2-2 微電極簡介……………………………………………5
2-2-1 微電極之特性……………………………………5
2-2-2 微電極之總類……………………………………6
第三章實驗方法與儀器設備………………………………………19
3-1 實驗流程圖……………………………………………19
3-2 真空系統……………………………………………….20
3-3材料製備……………………………………………..21
3-4基板裁製與清洗……………………………………..21
3-5 薄膜濺鍍之條件…………………………………….23
3-6 特性分析…………………………………………….25
第四章結果與討論………………………………...……………….30
4-1 成分分析……………………………...……………….30
4-1-1 薄膜成分分析結果……………...……………….30
4-1-2 濺鍍薄膜成分異動原因之探討...……………….30
4-2 薄膜厚度與沉積速率分析…………...…………….36
4-2-1 膜厚與沉積速率結果…………...………………36
4-2-2 膜厚與沉積速率分析…………...………………36
4-3 結構分析…………...………………...………………38
4-3-1 SEM表面觀察..………………...………………38
4-3-2 拉曼光譜..………………...…………………….41
4-3-3 X-ray diffraction…………...……………………44
4-3-4 TEM與四點探針(Four -points) ……………….45
第五章結論………………………………...……………………….91
第六章參考文獻…………………………...……………………….93

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