臺灣博碩士論文加值系統

由於半導體技術的日益進步，使得許多傳統所使用的材料已不敷使用，其中一個極關鍵性的挑戰是在於尋找高的介電值半導體材料，因為傳統所使用的二氧化矽(SiO2--ε=3.9)在厚度及面積方面已經達到極限，所以需使用新的閘極介電材料來取代SiO2，目前已經有多種材料被提出，例如:Al2O3、Y2O3、HFO2……等，再使用新的材料系統的同時也必須考慮許多特性，大致可分為兩方面:一方面為材料的基本特性，包括介電係數(permittivity)、能隙結構(band structure)、介面上的熱穩定度(thermodynamic stability at interfaces)以及薄膜的晶體結構(film morphology)；另一方面為作成元件的特性，包括介面品質(interface quality)，製程相容度(process compatibility)以及可靠度(reliability)……等。在研究中主要是以金屬有機氣相磊晶沉積(Metal Organic Chemical Vapor Deposition─MOCVD)系統成長氮化鋁(AlN)薄膜於Si基板上，然後去探討與AlN介面特性相關的研究。因為AlN材料本身包含幾項優點:1.良好的絕緣特性；2.介電係數比SiO2高(AlN ε=8.9~9.2)；3.較易於與Si(n-type)相互配合；4.高能隙(AlN--6.2eV)。此外使用以MOCVD成長金屬/絕緣體/半導體(Metal/Insulator(AlN)/Si)霍爾量測(Hall measurement)、I-V(電流-電壓)、C-F(電容-頻率)、C-V(電容-電壓)的電性量測，探討MIS結構能更了解AlN界面特性。

Due to the low dielectric constant limitation of conventional materials, such as SiO2(ε=3.9), it’s desited to search for a new material with high dielectric constant. The AlN possesses several advantages superior to the conventional materials: 1. High dielectric constant (ε=8.9~9.2); 2. Stable chemical properties; 3. Good thermal stability; 4. Large band gap (6.2 eV). In this study, we used AlN as the insulator layer in the metal-insulator-semiconductor(MIS) structure. AlN was epitaxially grown on Si(111) by organo-metailc vapor phase epitaxy(OMVPE), and deposited Ti/Al by E-gun evaporation as the metal layer. Using C-V、I-V、C-F or Hall measurement, we found the inversion characterization. The properties of interface trap charges and mechanism of leakage current between AlN and Si were also dicussed in detail.

指導教授推薦書……………………………………………………… Ⅰ
口試委員會審定書…………………………………………………… Ⅱ
授權書………………………………………………………………… Ⅲ
致謝…………………………………………………………………… Ⅳ
中文摘要……………………………………………………………… Ⅴ
英文摘要……………………………………………………………… Ⅵ
目錄…………………………………………………………………… Ⅶ
圖表目錄……………………………………………………………… Ⅸ
第一章 序論………………………………………………………... 1
1-1 前言………………………………………………….. 1
1-2 簡介………………………………………………….. 3
1-3 論文架構…………………………………………….. 6
第二章 實驗相關原理…………………………………………….... 7
2-1 AlN緩衝層製作及分析原理……………………..... 7
2-2 MOCVD簡介及原理……………………………..... 9
2-3 MIS二極體電容元件…………………………….... 11
2-4 理想的C-V特性…………………………………... 13
2-5 閘極絕緣層(氧化層)與半導體介面缺陷…………. 18
2-6 閘極介電層……………………………………….... 21
第三章 實驗的步驟及方法………………………………………... 29
3-1 磊晶………………………………………………… 29
3-2 製程………………………………………………… 30
3-3 量測……………………………………………….... 31
3-4 分析………………………………………………… 35
第四章 實驗的結果及討論……………………………………….. 39
4-1 樣品結構分析……………………………………… 39
4-2 霍爾量測實驗……………………………………… 43
4-3 Thermoelectric probe method……………………… 44
4-4 AlN/Si的各界面狀態分析………………………… 49
4-5 漏電流的探討……………………………………… 57
4-6 電容-電壓量測之結果…………………………….. 59
第五章 結論………………………………………………………... 66
第六章 參考文獻…………………………………………………... 68

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