臺灣博碩士論文加值系統

本論文研究目的為應用氧化鋅薄膜製造與發展出一個高透明薄膜電晶體(ZnO-TFTs)，以及將此氧化鋅薄膜應用於電阻式記憶體中。氧化鋅材質的寬能隙特性，使氧化鋅成為備受矚目的透明半導體材料。所以本文將此氧化鋅薄膜做銦與錫的摻雜調配。然後製出IZO以及TZO結構的氧化鋅薄膜，並製作於TFT中。然而氧化鋅薄膜屬於金屬氧化物材質也屬於高介電材質(high-K)。在電阻式記憶體中，目前也越來越多研究是為了針對儲存層中的氧空缺(oxide vacancy)以及電阻絲filament theory來探討。本論文也針對上電極金屬材質，所造成的反應來做簡單的探討。
論文主要分成六個部分，包含前言、文獻探討、氧化鋅溶膠的配置、TFT的分析、RRAM的分析以及結論。在TFT的分析中，探討了氧鋅薄膜的物分析以及電性分析。同時也對摻雜銦與錫的氧化鋅元件作分析。在電阻式記憶體的分析的章節中，可以得知。主要是應用金材質本身與氧化鋅的接合特性來製作出電阻式記憶體。此電阻式記憶體結構為Al/Au/ZnO/Al 。並將此含金結構的上電極與未含金結構的電阻式記憶體做一個簡易之比較。

The purpose of this paper is the application of zinc oxide thin films in production and development of highly transparent thin film transistors (ZnO-TFTs), and zinc oxide films are applied to RRAM. Due to wide bandgap properties of zinc oxide material, zinc oxide become highly anticipated transparent semiconductor material.
Therefore, in this thesis, zinc oxide thin films are used for indium-doped and tin-doped deployment. Then the study made ZnO thin films with IZO and TZO structures, and applied in the TFT. However, zinc oxide thin films belong to oxide materials, and also to the high dielectric material (high-K). In RRAM, at present, more and more research are focused on exploring oxygen vacancies and resistance wire filament theory in the storage layer.
To the reaction caused by metal electrode, this thesis also has simple discussion.
This thesis is divided into six parts, including preface, literature discussion, zinc oxide gel-sol configuration, TFT analysis, RRAM analysis and conclusions. In the TFT analysis, we discuss the zinc oxide film physical analysis and electrical analysis. In the meantime, tin-doped and indium-doped zinc oxide devices are also analyzed, which can be leaned in the analysis section of RRAM. The bonding characteristics of Gold and zinc oxide are used to produce RRAM. This RRAM structure is Al / Au / ZnO / Al. We made a simple comparison between PRAM with gold in upper electrode and PRAM without gold electrode

Contents
Acknowledgement∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙Ⅰ
Abstract (Chinese) ∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙Ⅱ
Abstract (English) ∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙Ⅳ
Contents∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙Ⅵ
Figure Captions∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙Ⅸ
Table Captions∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙ⅩⅢ
Chapter One Introduction∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙1
1.1 Application of Transistors∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙2
1.2 Motivation∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙3
1.3 Organization of Thesis∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙4
Chapter Two Literature Discussion∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙5
2.1 Basic Properties and Application of Zinc Oxide∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙5
2.1.1 Optical Properties of Zinc Oxide∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙6
2.1.2 Conductive Properties of Zinc Oxide∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙6
2.2 Sol-gel Method Principle∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙8
2.3 Thin Film Transistor Introduction∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙12
2.3.1 Thin Film Transistor Operating Principle∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙13
2.4 RRAM Structure∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙14
2.4.1 RRAM Switching Characteristics∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙15
2.4.2 RRAM operation mechanism - resistance filament theory∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙16
2.4.3 RRAM operation mechanism - redox reaction∙∙∙∙∙∙∙∙∙17
Chapter Three ZnO Configuration and Device Manufacture∙∙∙∙∙∙∙∙∙∙∙∙33
3.1 Introduction to common zinc oxide deposition method∙∙∙∙∙∙∙∙33
3.1.1 Physical Vapor Deposition∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙33
3.1.2 Physical Sputtering∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙34
3.1.3 Chemical MOCVD∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙34
3.1.4 Chemical Hydrothermal Method∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙35
3.2 Configuration and Device Manufacture of Indium-contained Zinc Oxide Sol∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙35
3.2.1 Zinc Oxide Containing Indium Sol Configuration∙∙36
3.2.2 Zinc Oxide Containing Indium Sol Device Manufacture∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙36
3.3 Zinc Oxide Containing Tin Sol Configuration and Device Manufacture∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙37
3.3.1 Zinc Oxide Containing Tin sol configuration∙∙∙∙∙∙∙∙∙∙∙37
3.3.2 Zinc Oxide Containing Tin Sol Device Manufacture∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙38
3.4 Zinc Oxide Used in RRAM Sol Configuration and Device Manufacture∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙39
3.4.1 Zinc Oxide RRAM sol configuration∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙39
3.4.2 Zinc Oxide RRAM sol manufacture∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙39
Chapter Four ZnO device characterization∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙49
4.1 Analysis of the zinc oxide physical properties∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙49
4.1.1 ESCA Analysis∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙49
4.1.2 TEM Analysis∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙50
4.2 Electrical analysis of the zinc oxide device∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙51
4.3 Electrical analysis of zinc oxide device containing indium∙∙52
4.4 Electrical analysis of a zinc oxide device containing tin∙∙∙∙∙∙∙53
4.5 Conclusion∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙55
Chapter Five Characteristic analysis of ZnO resistive memory devices∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙79
5.1 RRAM physical properties∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙79
5.2 RRAM electrical analysis∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙81
5.3 Conclusions∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙83
Chapter Six Conclusions & Future Recommendations∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙92
6.1 Summary of Research Achievements∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙92
6.2 Recommendations for Future Work∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙93
References∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙101
Publication List∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙∙114

References
[1]R. L. Hoffman, B. J. Norris and J. F. Wager, “ZnO-based transparent thin-film transistors”, Applied Physics Letters, Vol. 82, pp. 733-735, 2003.
[2]S. Bang, S. Lee, J. Park, S. Park, Y. Ko, C. Choi, H. Chang, H. Park and H. Jeon, “The effects of post-annealing on the performance of ZnO thin film transistors”, Thin Solid Films, Vol. 519, pp. 8109-8113, 2011.
[3]K. Kim, S. Park, J. B. Seon, K. H. Lim, K. Char, K. Shin and Y. S. Kim, “Patterning of Flexible Transparent Thin-Film Transistors with Solution-Processed ZnO Using the Binary Solvent Mixture”, Advanced Functional Materials, Vol. 21, pp. 3546-3553, 2011.
[4]B. Y. Oh, Y. H. Kim, H. J. Lee, B. Y. Kim, H. G. Park, J. W. Han, G. S. Heo, T. W. Kim, K. Y. Kim and D. S. Seo, “High-performance ZnO thin-film transistor fabricated by atomic layer deposition”, Semiconductor Science and Technology, Vol. 26, pp. 085007, 2011.
[5]R. Navamathavan, R. Nirmala and C. R. Lee, “Effect of NH3 plasma treatment on the device performance of ZnO based thin film transistors”, Vacuum, Vol. 85, pp. 904-907, 2011.
[6]T. Jun, K. Song, Y. Jeong, K. Woo, D. Kim, C. Bae and J. Moon, “High-performance low-temperature solution-processable ZnO thin film transistors by microwave-assisted annealing”, Journal of Materials Chemistry, Vol. 21, pp. 1102-1108, 2011.
[7]S. J. Pearton, D. P. Norton, K. Ip, Y. W. Heo and T. Steiner, “Recent progress in processing and properties of ZnO”, Progress in Materials Science, Vol. 50, pp. 293-340, 2005.
[8]Y. Igasaki and H. Saito, “The effects of zinc diffusion on the electrical and optical properties of ZnO:Al films prepared by r.f. reactive sputtering”, Thin Solid Films, Vol. 199, pp. 223-230, 1991.
[9]G. Luka, L. Wachnicki, B.S. Witkowski, T.A. Krajewski, R. Jakiela, E. Guziewicz and M. Godlewski, “The uniformity of Al distribution in aluminum-doped zinc oxide films grown by atomic layer deposition”, Materials Science and Engineering B, Vol. 176, pp. 237-241, 2011.
[10]S. Lee, D. Cheon, W. J. Kim, K. J. Ahn and W. Lee, “Combined effect of the target composition and deposition temperature on the properties of ZnO:Ga transparent conductive oxide films in pulsed dc magnetron sputtering”, Semiconductor Science and Technology, Vol. 26, pp. 115007, 2011.
[11]B. C. Jiao, X. D. Zhang, C. C. Wei, J. Sun, Q. Huang and Y. Zhao, “Effect of acetic acid on ZnO:In transparent conductive oxide prepared by ultrasonic spray pyrolysis”, Thin Solid Films, Vol. 520, pp. 1323-1329, 2011.
[12]I. Maksimenko and P. J. Wellmann, “Low-temperature processing of transparent conductive indium tin oxide nanocomposites using polyvinyl derivatives”, Thin Solid Films, Vol. 520, pp. 1341-1347, 2011.
[13]P. K. Weimer, “The TFT A New Thin-Film Transistor”, Proceedings of the IRE, Vol. 50, pp. 1462-1469, 1962.
[14]C. L. Wang, H. C. Cheng, I. C. Lee, C. Y. Wu, Y. T. Cheng and P. Y. Yang, “High-Performance Excimer-Laser-Crystallized Polycrystalline Silicon Thin-Film Transistors with the Pre-Patterned Recessed Channel”, Japanese Journal of Applied Physics, Vol. 51, pp. 066502, 2012.
[15]J. K. Lee, Y. S. Lim, C. H. Park, Y. I. Park, C. D. Kim and Y. K. Hwang, “a-Si:H Thin-Film Transistor-Driven Flexible Color E-Paper Display on Flexible Substrates”, IEEE Electron Device Letters, Vol. 31, pp. 833-835, 2010.
[16]S. Fabiano, H. Wang, C. Piliego, C. Jaye, D. A. Fischer, Z. Chen, B. Pignataro, A. Facchetti, Y. L. Loo and M. A. Loi, “Supramolecular Order of Solution-Processed Perylenediimide Thin Films: High-Performance Small-Channel n-Type Organic Transistors”, Advanced Functional Materials, Vol. 21, pp. 4479-4486, 2011.
[17]H. S. P. Wong, H. Y. Lee, S. Yu, Y. S. Chen, Y. Wu, P. S. Chen, B. Lee, F. T. Chen and M. J. Tsai, “Metal–Oxide RRAM”, Proceedings of the IEEE, Vol. 100, pp. 1951-1970, 2012.
[18]X. Wu, P. Zhou, J. Li, L. Y. Chen, H. B. Lv, Y. Y. Lin and T. A. Tang, “Reproducible unipolar resistance switching in stoichiometric ZrO2 films”, Applied Physics Letters, Vol. 90, pp. 183507, 2007.
[19]W. Guan, M. Liu, S. Long, Q. Liu and W. Wang, “On the resistive switching mechanisms of Cu/ZrO2：Cu/Pt”, Applied Physics Letters, Vol. 93, pp. 223506, 2008.
[20]Y. Li, S. Long, H. Lv, Q. Liu, W. Wang, Q. Wang, Z. Huo, Y. Wang, S. Zhang, S. Li and M. Liu, “Reset Instability in Cu/ZrO2：Cu/Pt RRAM Device”, IEEE Electron Device Letters, Vol. 32, pp. 363-365, 2011.
[21]S. Long, Q. Liu, H. Lv, Y. Li, Y. Wang, S. Zhang, W. Lian, K. Zhang, M. Wang, H. Xie and M. Liu, “Resistive switching mechanism of Ag/ZrO2：Cu/Pt memory cell”, Applied Physics A, Vol. 102, pp. 915-919, 2011.
[22]Q. Lv, S. Wu, J. Lu, M. Yang, P. Hu and S. Li, “Conducting nanofilaments formed by oxygen vacancy migration in Ti/TiO2/TiN/MgO memristive device”, Journal of Applied Physics, Vol. 110, pp. 104511, 2011.
[23]J. H. Oh, K. C. Ryoo, S. Jung, Y. Park and B. G. Park, “Effect of Oxidation Amount on Gradual Switching Behavior in Reset Transition of Al/TiO2-Based Resistive Switching Memory and Its Mechanism for Multilevel Cell Operation”, Japanese Journal of Applied Physics, Vol. 51, pp. 04DD16, 2012.
[24]Y. Y. Chen, G. Pourtois, C. Adelmann, L. Goux, B. Govoreanu, R. Degreave, M. Jurczak, J. A. Kittl, G. Groeseneken and D. J. Wouters, “Insights into Ni-filament formation in unipolar-switching Ni/HfO2/TiN resistive random access memory device”, Applied Physics Letters, Vol. 100, pp. 113513, 2012.
[25]Y. Y. Chen, B. Govoreanu, L. Goux, R. Degraeve, A. Fantini, G. S. Kar, D. J. Wouters,G. Groeseneken, J. A. Kittl, M. Jurczak and L. Altimime, “Balancing SET/RESET Pulse for > 1010 Endurance in HfO2/Hf 1T1R Bipolar RRAM”, IEEE Transactions on Electron Devices, Vol. 59, pp. 3243-3249, 2012.
[26]D. Panda, C. Y. Huang and T. Y. Tseng, “Resistive switching characteristics of nickel silicide layer embedded HfO2 film”, Applied Physics Letters, Vol. 100, pp. 112901, 2012.
[27]X. Yang, S. Long, K. Zhang, X. Liu, G. Wang, X. Lian, Q. Liu, H. Lv, M. Wang, H. Xie, H. Sun, P. Sun, J. Suñé and Ming Liu, “Investigation on the RESET switching mechanism of bipolar Cu/HfO2/Pt RRAM devices with a statistical methodology”, Journal of Physics D:Applied Physics, Vol. 46, pp. 245107, 2013.
[28]S. Long, C. Cagli, D. Ielmini, M. Liu and J. Suñé, “Reset Statistics of NiO-Based Resistive Switching Memories”, IEEE Electron Device Letters, Vol. 32, pp. 1570-1572, 2011.
[29]S. W. Ryu, Y. B. Ahn, H. J. Kim and Y. Nishi, “Ti-electrode effects of NiO based resistive switching memory with Ni insertion layer”, Applied Physics Letters, Vol. 100, pp. 133502, 2012.
[30]I. C. Yao, D. Y. Lee, T. Y. Tseng and P. Lin, “Fabrication and resistive switching characteristics of high compact Ga-doped ZnO nanorod thin film devices”, Nanotechnology, Vol. 23, pp. 145201, 2012.
[31]J. W. Seo, J. W. Park, K. S. Lim, J. H. Yang and S. J. Kang, “Transparent resistive random access memory and its characteristics for nonvolatile resistive switching”, Applied Physics Letters, Vol. 93, pp. 223505, 2008.
[32]F. Yakuphanoglu, Y. Caglar, M. Caglar and S. lican, “ZnO/p-Si heterojunction photodiode by sol–gel deposition of nanostructure n-ZnO film on p-Si substrate”, Materials Science in Semiconductor Processing, Vol. 13, pp. 137-140, 2010.
[33]D. Xu, Y. Xiong, M. Tang, B. Zeng, Y. Xiao, J. Li, Liu Liu, S. Yan, Z. Tang, L. Wang, X. Zhu and R. Lid, “Improvement of Resistive Switching Performances in ZnLaO Film by Embedding a Thin ZnO Buffer Layer”, ECS Solid State Letters, Vol. 2, pp. Q69-71, 2013.
[34]S. Kim, H. Moon, D. Gupta, S. Yoo and Y. K. Choi, “Resistive Switching Characteristics of Sol–Gel Zinc Oxide Films for Flexible Memory Applications”, IEEE Transactions on Electron Devices, Vol. 56, NO. 4, pp. 696-699, 2009.
[35]R. Waser and M. Aono, “Nanoionics-based resistive switching memories”, Nature Materials, Vol.6, pp. 833-840, 2007.
[36]H. H. Huang, W. C. Shih, and C. H. La, “Nonpolar resistive switch in the Pt/MgO/Pt nonvolatile memory device”, Applied Physics Letters, Vol. 96, pp. 193505, 2010.
[37]A. Sawa, “Resistive switching in transition metal oxides”, Materialstoday, Vol. 11, pp. 28-36, 2008.
[38]J. Y. Chen, C. L. Hsin, C. W. Huang, C. H. Chiu, Y. T. Huang, S. J. Lin, W. W. Wu and L. J. Chen, “Dynamic Evolution of Conducting Nanofilament in Resistive Switching Memories”, Nano Letters, Vol. 13, pp. 3671-3677, 2013.
[39]X. Wu, D. Cha, M. Bosman, N. Raghavan, D. B. Migas, V. E. Borisenko, X. X. Zhang, K. Li and K. L. Pey, “Intrinsic nanofilamentation in resistive switching”, Journal of Applied Physics, Vol. 113, pp. 114503, 2013.
[40]W. Lee, J. Park, S. Kim, J. Woo, J. Shin, D. Lee, E. Cha and H. Hwang, “Improved switching uniformity in resistive random access memory containing metaldoped electrolyte due to thermally agglomerated metallic filaments”, Applied Physics Letters, Vol. 100, pp. 142106, 2012.
[41]I. Valov and M. N. Kozicki, “Cation-based resistance change memory”, Journal of Physics D: Applied Physics, Vol. 46, pp. 074005, 2013.
[42]B. Gao, B. Sun, H. Zhang, L. Liu, X. Liu, R. Han, J. Kang and B. Yu, “Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory”, IEEE Electron Device Letters, Vol. 30, pp. 1326-1328, 2009
[43]N. Xu, B. Gao, L. F. Liu, B. Sun, X. Y. Liu, R.Q. Han, J.F. Kang and B. Yu, “A Unified Physical Model of Switching Behavior in Oxide-Based RRAM”, Symposium on VLSI Technology, Honolulu, pp. 100-101, 2008.
[44]H. C. You, “Indium Doping Concentration Effects in the Fabrication of Zinc-Oxide Thin-Film Transistors＂, International Journal of Electrochemical Science, Vol. 8, pp. 9785-9800, 2013.
[45]S. H. Choday, S. K. Gupta and K. Roy, “Write-Optimized STT-MRAM Bit-Cells Using Asymmetrically Doped Transistors”, IEEE Electron Device Letters, Vol. 35, pp. 1100-1102, 2014.
[46]D. Lee, X. Fong and K. Roy, “R-MRAM: A ROM-Embedded STT MRAM Cache”, IEEE Electron Device Letters, Vol. 34, pp. 1256-1258, 2013.
[47]S. Boyn, S. Girod, V. Garcia, S. Fusil, S. Xavier, C. Deranlot, H.Yamada, C. Carrétéro, E. Jacquet, M. Bibes, A. Barthélémy and J. Grollier, “High-performance ferroelectric memory based on fully patterned tunnel junctions”, Applied Physics Letters, Vol. 104, pp. 052909, 2014.
[48]L. Goux, G. Russo, N. Menou, J. G. Lisoni, M. Schwitters, V. Paraschiv, D. Maes, C. Artoni, G. Corallo, L. Haspeslagh, D. J. Wouters, R. Zambrano and C. Muller, “A highly reliable 3-D integrated SBT ferroelectric capacitor enabling FeRAM scaling”, IEEE Transactions on Electron Devices, Vol. 52, pp. 447-453, 2005.
[49]P. Hosseini, A. Sebastian, N. Papandreou, C. D. Wright and H. Bhaskaran, “Accumulation-Based Computing Using Phase-Change Memories With FET Access Devices”, IEEE Transactions on Electron Devices, Vol. 36, pp. 975-977, 2015.
[50]H. Yang, H. K. Lee, R. Zhao, L. Shi and T. C. Chong, “Programming current density reduction for elevated-confined phase change memory with a self-aligned oxidation TiWOx heater”, Applied Physics Letters, Vol. 105, pp. 213509 , 2014.
[51]L. Liu, D. Yu, W. Ma, B. Chen, F. Zhang, B. Gao and J. Kang, “Multilevel resistive switching in Ag/SiO2/Pt resistive switching memory device”, Japanese Journal of Applied Physics, Vol.4, pp. 021802, 2015.
[52]T. H. Yeh, R. D. Lin, B. R. Chemg and J. S. Chemg, “Leakage current behaviors of Al/ZrO2/Al and Al/YSZ/Al devices”, Japanese Journal of Applied Physics, Vol. 54, pp. 01AD01, 2015.
[53]X. L. Shao, J. S. Zhao, K. L. Zhang, R. Chen, K. Sun, C. J. Chen, K. Liu, L. W. Zhou, J. Y. Wang, C. M. Ma, K. J. Yoon and C. S. Hwang, “Two-Step Reset in the Resistance Switching of the Al/TiOx/Cu Structure”, ACS Applied Materials & Interfaces, Vol. 5, pp. 11265-11270, 2013.
[54]L. Liu, Y. Hou, B. Chen, B. Gao, and J. Kang, “Improved unipolar resistive switching characteristics of mixed-NiOx/NiOy-film-based resistive switching memory devices”, Japanese Journal of Applied Physics, Vol. 54, pp. 094201, 2015.
[55]Y. Song, H. Jeong, J. Jang, T. Y. Kim, D. Yoo, Y. Kim, H. Jeong and T. Lee, “1/f Noise Scaling Analysis in Unipolar-Type Organic Nanocomposite Resistive Memory”, ACS Nano, Vol. 9, pp. 7697-7703, 2015.
[56]D. Y. Guo, Z. P. Wu, L. J. Zhang, T. Yang, Q. R. Hu, M. Lei, P. G. Li, L. H. Li and W. H. Tang, “Abnormal bipolar resistive switching behavior in a Pt/GaO1.3/Pt structure”, Applied Physics Letters, Vol. 107, pp. 032104, 2015.
[57]J. Zhang, H. Yang, Q. L. Zhang, S. Dong and J. K. Luo, “Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition”, Applied Physics Letters, Vol. 102, pp. 012113, 2013.
[58]Y. Lai, P. Xin, S. Cheng, J. Yu and Q. Zheng, “Plasma enhanced multistate storage capability of single ZnO nanowire based memory”, Applied Physics Letters, Vol. 106, pp. 031603, 2015.
[59]C. H. Huang, J. S. Huang, C. C. Lai, H. W. Huang, S. J. Lin and Y. L. Chueh, “Manipulated Transformation of Filamentary and Homogeneous Resistive Switching on ZnO Thin Film Memristor with Controllable Multistate”, ACS Applied Materials & Interfaces, Vol. 5, pp. 6017-6023, 2013.
[60]L. Chen, H. Y. Gou, Q. Q. Sun, P. Zhou, H. L. Lu, P. F. Wang, S. J. Ding and D. W. Zhang, “Enhancement of Resistive Switching Characteristics in Al2O3-Based RRAM With Embedded Ruthenium Nanocrystals”, IEEE Electron Device Letters, Vol.32, pp. 794-796, 2011.
[61]Y. Wu, S. Yu, B. Lee and P. Wang, “Low-power TiN/Al2O3/Pt resistive switching device with sub-20 μA switching current and gradual resistance modulation”, Journal of Applied Physics, Vol. 110, pp. 094104, 2011.
[62]W. A. Hubbard, A. Kerelsky, G. Jasmin, E. R. White, J. Lodico, M. Mecklenburg and B. C. Regan, “Nanofilament Formation and Regeneration During Cu/Al2O3 Resistive Memory Switching”, Nano Letter, Vol. 15, pp. 3983-3987 , 2015.
[63]M. Zhang, S. Long, G. Wang, X. Xu, Y. Li, Q. Liu, H. Lv, X. Lian, E. Miranda, J. Suñé and M. Liu, “Set statistics in conductive bridge random access memory device with Cu/HfO2/Pt structure”, Applied Physics Letters, Vol. 105, pp. 193501, 2014.
[64]U. Chand, C. Y. Huang, J. H. Jieng, W. Y. Jang, C. H. Lin and T. Y. Tseng, “Suppression of endurance degradation by utilizing oxygen plasma treatment in HfO2 resistive switching memory”, Applied Physics Letters, Vol. 106, pp. 153502, 2015.
[65]S. Brivio, J. Frascaroli and S. Spiga, “Role of metal-oxide interfaces in the multiple resistance switching regimes of Pt/HfO2/TiN devices”, Applied Physics Letters, Vol. 107, pp. 023504, 2015.
[66]C. Hu, M. D. McDaniel, A. Posadas, A. A. Demkov, J. G. Ekerdt and E. T. Yu, “Highly Controllable and Stable Quantized Conductance and Resistive Switching Mechanism in Single-Crystal TiO2 Resistive Memory on Silicon”, Nano Letter, Vol.14, pp. 4360-4367 , 2014.
[67]C. Hu, M. D. McDaniel, J. G. Ekerdt and E. T. Yu, “High ON/OFF Ratio and Quantized Conductance in Resistive Switching of TiO2 on Silicon”, IEEE Electron Device Letters, Vol. 34, pp. 1385-1387, 2013.
[68]I. Salaou, T. Prodromakis, A. Khiat and C. Toumazou, “Resistive switching of oxygen enhanced TiO2 thin-film devices”, Applied Physics Letters, Vol. 102, pp. 013506, 2013.
[69]Y. Yang, J. Lee, S. Lee, C. H. Liu, Z. Zhong and W. Lu, “Oxide Resistive Memory with Functionalized Graphene as Built-in Selector Element”, Advanced Materials, Vol. 26, pp. 3693–3699, 2014.
[70]H. Zhao, H. Tu, F. Wei and J. Du, “Highly Transparent Dysprosium Oxide-Based RRAM With Multilayer Graphene Electrode for Low-Power Nonvolatile Memory Application”, IEEE Transactions on Electron Devices, Vol. 61, pp. 1388- 1393, 2014.
[71]K. C. Chang, R. Zhang, T. C. Chang, T. M. Tsai, J. C. Lou, J. H. Chen, T. F. Young, M. C. Chen, Y. L. Yang, Y. C. Pan, G. W. Chang, T. J. Chu, C. C. Shih, J. Y. Chen, C. H. Pan, Y. T. Su, Y. E. Syu, Y. H. Tai and S. M. Sze, “Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices”, IEEE Electron Device Letters, Vol. 34, pp. 677-679 , 2013.
[72]H. Zhang, B. Gao, B. Sun, G. Chen, L. Zeng, L. Liu, X. Liu, J. Lu, R. Han, J. Kang and B. Yu, “Ionic doping effect in ZrO2 resistive switching memory”, Applied Physics Letters, Vol. 96, pp. 123502 , 2010 .
[73]D. Y. Lee and T. Y. Tseung, “Unipolar Resistive Switching Characteristics of a ZrO2 Memory Device With Oxygen Ion Conductor Buffer Layer”, IEEE Electron Device Letters, Vol. 33, pp. 803-805, 2012.
[74]M. C. Wu, Y. W. Lin, W. Y. Jang, C. H. Lin and T. Y. Tseng, “Low-Power and Highly Reliable Multilevel Operation in ZrO2 1T1R RRAM”, IEEE Electron Device Letters, Vol. 32, pp. 1026-1028, 2011.
[75]C. Y. Liu, C. H. Lin, S. H. Liu, C. Z. Bai and Y. X. Zhang, “Improvement of switching uniformity in Cu/SiO2/Pt resistive memory achieved by voltage prestress”, Japanese Journal of Applied Physics, Vol. 54, pp. 031801 , 2015.
[76]B. J. Choi, A. C. Torrezan, K. J. Norris, F. Miao, J. P. Strachan, M. X. Zhang, D. A. A. Ohlberg, N. P. Kobayashi, J. J. Yang and R. S. Williams, “Electrical Performance and Scalability of Pt Dispersed SiO2 Nanometallic Resistance Switch”, Nano Letter, Vol. 13, pp. 3213-3217, 2013.
[77]T. Ninomiya, K. Katayama, S. Muraoka, R. Yasuhara, T. Mikawa and Z. Wei, “Conductive Filament Expansion in TaOx Bipolar Resistive Random Access Memory during Pulse Cycling”, Japanese Journal of Applied Physics, Vol. 52, pp. 114201, 2013.
[78]T. H. Park, S. J. Song, H. J. Kim, S. G. Kim, S. Chung, B. Y. Kim, K. J. Lee, K. M. Kim, B. J. Choi and C. S. Hwang, “Thickness effect of ultra-thin Ta2O5 resistance switching layer in 28 nm-diameter memory cell”, Scientific Reports, Vol. 5, pp. 15965, 2015.
[79]D. Ielmini, S. Balatti and S. Larentics, “Filament Evolution during Set and Reset Transitions in Oxide Resistive Switching Memory”, Japanese Journal of Applied Physics, Vol. 52, pp. 04CD10, 2013.
[80]U. Celano, L. Goux, A. Belmonte, K, Opsomer, A. Franquet, A. Schulze, C. Deravernier, O. Richard, H. Bender, M. Jurczak and W. Vandervorst, “Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory Devices”, Nano Letter, Vol.14, pp. 2401-2406, 2014.