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研究生:陳冠丞
研究生(外文):Kuan-cheng Chen
論文名稱:高效率高壓直流/直流降壓轉換晶片設計
論文名稱(外文):High-efficiency high-voltage DC/DC step-down chip design
指導教授:夏世昌夏世昌引用關係
指導教授(外文):Shih-chang Hsia
學位類別:碩士
校院名稱:國立雲林科技大學
系所名稱:電子與光電工程研究所碩士班
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2013
畢業學年度:101
語文別:中文
論文頁數:123
中文關鍵詞:TSMCLED驅動FPGABuckLDO
外文關鍵詞:LDObuckLED driverFPGATSMC
相關次數:
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隨著智慧型手機、平板電腦、PDA等可攜式電子產品盛行,提高各項可攜式電子產品效能已成為趨勢,其中電壓調節模組往往佔據這些電子產品的一定體積,而為了達到更高效率的電源管理,直流/直流電壓調節模組甚為重要。
本論文使用製程為TSMC 0.25 um CMOS HIGH VOLTAGE MIXED SIGNAL共完成三個晶片並透過CIC於TSMC下線,晶片分別為(1) 低壓降線性穩壓器,量測結果顯示低壓降特性讓電路在輸入電壓與輸出電壓相近時,轉換效率高達98.5%;(2) 精簡型切換式降壓轉換器,使用較簡單的回授電路完成PWM控制,量測結果顯示PWM頻率會隨著負載增加而減少,未來可以應用於負載感測; (3) 數位控制切換式降壓轉換器,使用全數位的方式控制產生PWM,可以固定PWM獲得最佳化輸出電壓,電路可以根據不同功能需求,提供不同的電壓準位轉換。
另外將數位控制切換式降壓轉換器以FPGA實現電路後應用於LED驅動,由於LED是電流驅動元件,其亮度與電流大小成正比,依照不同的應用會使用不同的LED串列數,因此LED驅動電壓也要隨著改變。本論文提出自適應電壓調變LED驅動電路系統,輸入電壓固定為40V,輸出電壓可以依照不同的LED串列數自動調整達到最佳化驅動,輸出電流最大可以驅動至1A,可以依照使用者需求自行調整LED亮度。
電路測試結果顯示可以驅動10個1W白光LED (300mA),最高效率為80.38%,或10個3W白光LED (500mA),最高效率為83.49%,或5個5W白光LED (600mA),最高效率為84.69%,輸出電壓可調範圍為0V~38V。
In this thesis, it uses the process of TSMC 0.25 um CMOS HIGH VOLTAGE MIXED SIGNAL to complete a total of three wafers and be off the assembly line of TSMC through CIC. The wafers are as the following respectively: (a) low-dropout linear regulator. Measurement results show that the feature of low voltage drop allows the conversion efficiency is up to 98.5% when the input voltage and the output voltage of circuit are similar; (b) simple-switching buck converter. It uses relatively simple feedback circuit to complete PWM control, and measurement results show that the PWM frequency will be decreased as the load increases, which can be applied to the load sensing in the future; (c) digital control switching buck converter. It uses all-digital way to control and generate PWM. It can fix PWM to obtain the best output voltage. The circuit can provide different voltage levels conversion according to the different functional needs.
Additionally, digital control switching buck converter uses FPGA to achieve LED driver circuit and then apply to LED driving. According to different applications, it uses different LED serial number, so LED is also changed as the driving voltage. This paper presents self-adaptive voltage regulation LED driving system. The input voltage is fixed at 40V, and the output voltage can follow different LED serial number to adjust to optimal driving automatically. The maximum output current can be driven to 1A. It can adjust LED brightness in accordance with user requirements.
The circuit test results show the adjustable output voltage range is 0V ~ 38V, and it can drive 10 1W white LED (300mA), or 10 3W White LED (500mA), or 5 5W white LED (600mA) with maximum efficiency 84.69%.
中文摘要 i
ABSTRACT ii
誌謝 iii
目錄 iv
表目錄 viii
圖目錄 ix
第一章 緒論 1
1.1 背景簡介 1
1.2 研究動機 2
1.3 論文架構 3
第二章 直流對直流轉換器概論 4
2.1 穩壓器分類 4
2.1.1 切換式降壓轉換器簡介 5
2.2 控制電路分類 8
2.2.1 電壓模式控制(Voltage Mode Control) 8
2.2.2 電流模式控制(Current Mode Control) 9
2.3 電壓模式切換式降壓穩壓器系統迴路穩定度分析 12
2.3.1 電壓模式切換式降壓穩壓器系統轉移函數 13
2.3.2 補償電路型式 15
2.3.3 Type II補償電路設計 16
2.3.4 Type III-A補償電路設計 18
2.3.5 Type III-B補償電路設計 21

第三章 低壓降線性穩壓晶片設計 23
3.1 介紹 23
3.2 電路架構 24
3.2.1 轉換效率 25
3.2.2 負載穩壓調節率(Load Regulation) 26
3.2.3 線性穩壓調節率(Line Regulation) 27
3.3 頻率響應(Frequency response) 28
3.4 電路實現 33
3.4.1 帶差參考電路 33
3.4.2 誤差放大器電路 36
3.5 模擬結果 38
3.6 晶片佈局與量測 40
3.6.1 晶片佈局平面圖 40
3.6.2 晶片打線圖 41
3.6.3 晶片量測說明 42
3.6.4 晶片微影圖 43
3.6.5 晶片量測結果 44
第四章 精簡型切換式降壓穩壓晶片設計 47
4.1 介紹 47
4.2 電路架構 48
4.2.1 轉換效率 50
4.3 電路實現 51
4.3.1 電感、電容 51
4.3.2 比較器 51
4.4 模擬結果 54
4.5 晶片佈局 58
4.5.1 晶片佈局平面圖 58
4.5.2 晶片打線圖 59
4.5.3 晶片量測說明 60
4.5.4 晶片微影圖 61
4.5.5 晶片量測結果 62
第五章 基於FPGA實現LED自動電壓供給系統 68
5.1 介紹 68
5.2 電路架構 69
5.2.1 數位控制切換式降壓轉換器規格 70
5.2.2 回授控制電路 70
5.2.3 脈波寬度調變電路 73
5.2.4 轉換效率 74
5.3 FPGA硬體實現 75
5.3.1 FPGA開發板 75
5.3.2 FPGA硬體實現 76
5.3.3 硬體使用資源 79
5.4 量測結果 80
5.5 自適應電壓調變LED驅動電路系統實現 82
5.5.1 電路架構 82
5.5.2 自適應電壓調變LED驅動電路規格 88
5.5.3 測試結果 88
第六章 數位控制切換式降壓穩壓晶片設計 93
6.1 電路架構 93
6.2.1 數位控制切換式降壓穩壓器規格 94
6.2.2 回授控制電路 94
6.2.3 脈波寬度調變電路 95
6.2.4 死區時間控制電路 107
6.2.5 轉換效率 109
6.3 模擬結果 110
6.4 晶片佈局與模擬 112
6.4.1 晶片佈局平面圖 112
6.4.2 晶片打線圖 113
6.4.3 晶片量測說明 115
6.4.4 晶片微影圖 116
6.4.5 晶片量測結果 117
第七章 結論 120
參考文獻 121
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