Cover
Contents
Part 1.
Chapter I The Technological and Scientific Aspects of Transition Metal Silicides
1-1. An Overview
1-2. Silicide Applications
Chapter 2 Formation of Amorphous Interlayer by Solid-State Diffusion of Polycrystalline Metal Thin-Films on Single-Crystal Si
2-1. An Over view
2-2. Thermodynamic Properties of the Melt and the Glass Formation Ability
2-3. Methods of Amorphization
2-4. Amorphization by Solid-State Reaction in Metal/Metal Diffusion Couples
2-5. Amorphization by Solid-State Interdiffusion in Metal/Si Diffusion Couples
2-6. Kinetic Aspects of Solid-State Amorphization
2-7. Thermodynamic Aspects of Solid-State Amorphization -- Miedema''s Model
2-8. Microstructural analyses for Amorphous Solids
Chapter 3 Interfacial Reactions of Metals Thin Films on Silicon
3-1. An Over view
3-2. Theories of Silicide Formation
3-3. Epitaxial Silicides
3-4. Structure of Silicide/Si Interfaces
Chapter 4 Electrical Properties of Interfacial Reactions of Metal thin Films on Si
4-1. An Over view
4-2. Schottky Barrier Height
4-3. Ohmic Contacts
4-4. Sheet Resistance
Part II. Experimental Procedures
Chapter 5 Experimental Procedures
5-1. Initial Wafer Cleaning
5-2. Thin Metal Film Deposition
5-3. Heat Treatments
5-4. Sample Preparation for Transmission Electron Microscope Observation
5-5. Transmission Electron Microscope Observation
5-6. Chemical Analysis
5-7. Electrical Property Measurement
5-8. Computer Simulation of High-Resolution Images
Part III Results and Discussion
Chapter 6 Growth Kinetics of Amorphous Interlayers by Solid-State Diffusion in Ultrahigh-Vacuum-Deposited Polycrystalline V Thin Films on (001)Si
6-1. Motivation
6-2. Experimental Procedures
6-3. Results and Discussion
6-4. Summary and Conclusions
Chapter 7 The Determination of Average Compositions of the Amorphous Interlayers in V/Si System Using Buried Ultrathin Oxide Layer and Capping Mo Layer to Define the Reference Planes for Interdiffusion
7-1. Motivation
7-2. Experimental Procedures
7-3. Results and Discussion
7-4. Summary and Conclusions
Chapter 8.Auto-Correlation Function Analysis of Phase Formation in the Interfacial Reactions of Ultrahigh Vacuum Deposited Polycrystalline V Thin Films on (001)Si
8-1. Motivation
8-2. Experimental Procedures
8-3. Results and Discussion
8-4. Summary and Conclusions
Chapter 9 Simultaneous Occurrence of Multiphases in the Interfacial Reactions of Ultrahigh Vacuum Deposited V and Cr Thin Films on Si
9-1. Motivation
9-2. Experimental Procedures
9-3. Results and Discussion
9-4. Summary and Conclusions
Chapter 10 Reaction Kinetics in the Interfacial Reactions of Cr Thin Films on (001)Si
10-1. Motivation
10-2. Experimental Procedures
10-3. Results and Discussion
10-4. Summary and Conclusions
Chapter II. Electrical Properties of interfacial Reactions of V and Cr Thin Films on Si
11-1. Motivation
11-2. Experimental Procedures
11-3. Results and Discussion
11-4. Summary and Conclusions
Part IV Summary and Conclusions
Part V Future Prospects
References
List of Tables
List of Diagrams
Others
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