臺灣博碩士論文加值系統

以有機化學氣相磊晶法成長及研製氮化物半導體及藍光及綠光發光二極體
研究生: 賴韋志 指導教授: 橫山明聰 張守進
國立成功大學電機工程學系
摘要
在本論文中，我們將利用有機金屬化學氣相磊晶法對氮化物半導體的成長及其特性作一系列的研究，並進而研製藍光及綠光發光二極體(LED)，在氮化鎵的摻雜方面，我們以離子佈植法將Si摻雜入p型氮化鎵，並利用熱退火方式成功的將p型氮化鎵反轉成n型，並可由此計算出其離子佈植後將其活化所需之活化能為720meV。在p型氮化鎵的研究，我們成功的使用CO2雷射處理法將Mg摻雜的氮化鎵活化成p型氮化鎵，且活化的效果比一般使用熱退火方式佳，其CO2雷射處理後之載子濃度可達8x1017cm-3。
在AlGaN成長特性方面，Al的組成與成長時的成長速率、壓力及NH3的流量有相當大的關聯，對AlGaN/GaN的異質接面其電子遷移率與Al的組成及其摻雜的濃度有相當關係，而此結構之電子遷移率殼達1560 cm2/V.s，在p型的AlGaN方面，其Al組成為13%時其摻雜濃度可達1x1017cm-3 。
在LED製程中p型氮化鎵的歐姆接觸為最重要的關鍵。雖然目前一般都使用Ni/Au作為p型淡化鎵的歐姆接觸，在本論文中我們發現使用Ni/AuZn作為歐姆接觸可以得到較佳的Thermal stability，其在650℃ annealing 時其specific contact resistivity將可保持於9x10-3W cm2。
在藍光及綠光LED特性方面，目前我們以成功研製出藍光及綠光發光二極體，其藍光發光二極體的發光波長為466nm其操作電壓小於4V，其功率大於1.5mW，其綠光發光二極體之發光波長為505nm其發光功率大於0.5mW。由於III-nitride材料為一具有強piezoelectric效應因此其發光波長會隨注入電流的增加而變化為減少此一效應我們使用AlInGaN作為Barrier，我們發現當使用AlInGaN作為Barrier時因well內壓電場減少使得大大改善其quantum confined Stark effect (QCSE)，當加入此一AlGaInN barrier layer其發光波長將不在因注入電流的增加而改變。

The growth and fabrication study of the III-Nitride semiconductors blue and green light emitting diode by MOVPE
Wei-Chih Lai*, Shoou-Jinn Chang**
and Meiso Yokoyama**
Department of Electrical Engineering National Cheng Kung University, Tainan, Taiwan, R. O. C.
Abstract
In this dissertation, the characteristics of the III-V nitride semiconductors had been studied. We first implanted Si into p-GaN, and activated the implanted Si so as to convert the electrical conduction of GaN from p-type to n-type by conventional thermal treatment. We found that the carrier activation energy was about 720 meV. We also used CO2 laser to activate Mg doped GaN film. We found that we can achieve a hole concentration up to 8x1017cm-3 by using such a CO2 laser treatment.
The growth characteristics of AlGaN and p-AlGaN were also studied. We found that the electron mobility of AlGaN/GaN hetrostructure depends on Al composition and doping concentration. Room temperature mobility as high as 1560 cm2/V.s was achieved from our AlGaN/GaN structure. With a 13% Al composition, the hole concentration of 1x1017cm-3 was measured from Mg doped AlGaN film.
Metal/III-Nitride interface was also studied. Although Ni/Au was the commonly used ohmic metal for p-GaN, we found that Ni/AuZn has a better thermal stability than Ni/Au. The contact resistivity of Ni/AuZn is around 9x10-3 W-cm2. This value was slightly better than that of Ni/Au contact. We also found that the alloy temperature for the Ni/AuZn contact on p-GaN was up to 650℃.
The characteristics of InGaN/GaN MQW blue and green LED were also studied. The output power of the 10 MQW InGaN/GaN LED with wavelength 466 nm was around 1.5 mW and the forward voltage at 20 mA was below 4 V. For the green LED, the peak wavelength was around 505 nm. At 20 mA, the forward voltage and output power were 4.0 V and 0.5 mW, respectively. III-nitride is a material with serious piezoelectric effect. Therefore the output wavelength will blue shift as the injection current increases. To reduce the piezoelectric effect, we introduced AlInGaN barrier. We found that we can drastically reduce the strain induced quantum confined Stark Effect (QCSE) by using the AlInGaN barrier layer. With the same InGaN well layer in the MQW active region, we found that the output wavelength reduced from 470nm to 450nm by replacing conventional GaN barrier with AlInGaN barrier in the MQW.
*The author
**The advisors

封面
Abstract(in Chinese)
Abstract(in English)
Acknowledgment
Figure captions
Chapter 1 Introduction
Chapter2 Intoduction of Metalorganic Vapor Epitaxy System
2.1General Introduction
2.2MOVPE Rcactor
2.3 In Situ Monitoring of III-Nitrids Growth
References
Chapter 3 The electrical and optical characteristic of the Si and Mg doped GaN Films
3.1 Electrical properties of multiple high-dose Si implantatio in p-GaN
3.2Optical and Electrical Characteristics of CO2-Laser-Treated Mg-Doped GaN Film
References
Chapter 4Growth and characterization of AIGaN epilayer
4.1Growth of the undoped AlGaN film
4.2Growth of the Si-doped AlGaNfilms
4.3 The Characteristic of the AlGaN/GaN MESFET
4.4The optical and electrical characteristic of the Mg doped p AlGaN
References
Chapter 5Metallization on the Mg doped GaN films
5.1 Comparison the ohmic contact of Ni/Au and Ni/AuZn on the p-GaN
5.2The1-Vcharacteristics of the Ni/AuBe contact on the p-GaN
5.3Pd/Au contact on the P-GaN
References
Chapter 6 The study InxGa1-Xn(AIIN)GaN MQW blue and green LEDs
6.1The InGaN/GaN MQW blue LED
6.2The InGaN/GaN MQW Green LED
6.3 The Study of the InGaN/AllnGaN MQW blue LED
References
Chapter 7 Conclusion
Publication list
Vita

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