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研究生:邵郁琇
研究生(外文):Yu-hsiu Shao
論文名稱:不同的電流密度與基材在複合式99.3Sn-0.7Cu/96.5Sn-3Ag-0.5Cu覆晶銲錫凸塊電遷移效應之研究
論文名稱(外文):The Investigation of Electromigration Influence on 99.3Sn-0.7Cu/96.5Sn-3Ag-0.5Cu Composite Flip-Chip Solder Bump at Different Current Density and Substrate Pad
指導教授:楊玉森
指導教授(外文):Yu-sen Yang
學位類別:碩士
校院名稱:國立高雄第一科技大學
系所名稱:機械與自動化工程所
學門:工程學門
學類:機械工程學類
論文種類:學術論文
論文出版年:2007
畢業學年度:95
語文別:中文
論文頁數:71
中文關鍵詞:覆晶封裝無鉛錫球接點電遷移銲錫凸塊介金屬析出UBM電流擁擠銲墊特徵壽命可靠度
外文關鍵詞:jointlead-free solderflip-chip packagingelectromigrationsolder
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本文主要針對無鉛錫球進行不同電流密度及溫度條件下之電遷移研究,研究方法為選取複合式99.3Sn-0.7Cu/96.5Sn-3Ag-0.5Cu 覆晶銲錫凸塊搭配Ti/NiV/Cu金屬凸塊(Under bump metallurgy ,UBM)及兩種不同的基板銲墊(NiAu、SOP)作為試片,於三種不同的電流密度(5kA/cm2、10kA/cm2、15kA/cm2)與不同的環境溫度(150℃、160℃、125℃)測試條件下,觀察其電遷移可靠度之行為並藉以探討不同的基板銲墊界面介金屬(intermetallic)之生成行為及反應。
實驗結果發現除了10kA/cm2-160℃的測試條件下,SOP之特徵壽命比NiAu之特徵壽命長外,其餘測試條件(5kA/cm2-150℃、10kA/cm2-150℃、15kA/cm2-125℃)下,無電鍍鎳金銲墊(NiAu) 之特徵壽命都比銅銲墊(Solder On Pad, SOP)之特徵壽命長。
在覆晶接點失效方面,有觀察到因電流密度引發之電遷移效應造成的UBM及介金屬溶解機制,接點會因UBM及介金屬溶解及消耗,導致介面發生空孔而失效。
在界面反應方面,電流密度大小僅有改變IMC的厚度大小,而不影響其生成種類。長時間溫度測試下,在界面皆有2相共存的IMC。搭配SOP銲墊之接點介金屬相為Cu6Sn5及Cu3Sn,其會隨電子流流動而堆積於陽極處;而搭配NiAu銲墊之接點介金屬相則為(Cu,Ni)6Sn5生成於晶片端及Ni3Sn4生成於基板端,晶片端介金屬會隨電子流流動而堆積於陽極處,但基板端介金屬則較少隨電子流流動而遷移。

關鍵詞:覆晶封裝、無鉛錫球、接點、電遷移、銲錫凸塊、介金屬、析出、UBM、電流擁擠、銲墊、特徵壽命、可靠度
The aim of this paper is to investigate the electromigration effect on lead-free solder joints under conditions of different temperature and current density. Samples were combined with 99.3Sn-0.7Cu/96.5Sn-3Ag-0.5Cu composite flip-chip solder bump and Ti/Ni(V)/Cu under bump metallurgy. Substrate pad metallization were chosen as Au/Ni/Cu or Cu samples were tested at three different current densities, 5kA/cm2, 10kA/cm2and 15kA/cm2, and three temperature 150℃、160℃、125℃ to understand the electromigration reliability and IMC reactions conditions.
It is found that, characteristic life of samples with SOP pad were longer than that of with NiAu pad under conditions of 10kA/cm2-160℃. However, with conditions of 5kA/cm2-150℃, 10kA/cm2-150℃, and 15kA/cm2-125℃, characteristic life of samples with NiAu pad were longer than that of SOP pad.
For the failure mechanism, electromigration-induced UBM and IMC dissolution caused by current density was been addressed as main reason that resulted in voids formed in these interfaces and leaded to final failure.
As for the interface interaction, current density would only affect the thickness of IMC, but not influence the phase compositions. Co-existence of two phase IMC was also observed after long term aging test. Cu6Sn5 and Cu3Sn were identified at interfaces of the samples combined with SOP pad substrate and would accumulate at anode by electron flow. Nevertheless, (Cu,Ni)6Sn5 and Ni3Sn4 were formed for samples with NiAu pad at chip and substrate side, respectively. As test went on, (Cu,Ni)6Sn5 IMC would accumulate at anode caused by electron flow, but Ni3Sn4 rarely migrated with electron flow.


Keywords: flip-chip packaging, lead-free solder, joint, electromigration, solder bump, imtermetallic compound, IMC, exposure, under bump metallization, UBM, current crowding, pad, characteristic life, reliability.
目 錄
中文摘要 ………………………………………………………i
英文摘要 ………………………………………………………ii
誌 謝 ………………………………………………………iii
目 錄 ………………………………………………………iv
表 目 錄 ………………………………………………………vi
圖 目 錄 ………………………………………………………vii
第一章 緒論 ……………………………………………………1
1.1研究背景 ……………………………………………1
1.2研究目的 ……………………………………………3
第二章 文獻回顧 ………………………………………………4
2.1電遷移效應 …………………………………………4
2.2電遷移之擴散通量 ……………………………………6
2.3電流擁擠與焦耳熱效應在覆晶結構…………………8
2.4電遷移的界面反應 …………………………………12
2.5 Weibull分佈介紹 ……………………………………19
2.5.1可靠度三大類型 ………………………………19
2.5.2 Weibull函數 …………………………………20
2.5.3 Weibull雙參數的物理意義 ….……………… 21
2.5.4 Weibull參數求解 ……………….………………23
2.5.5 Weibull特徵壽命比較 …………….…………25
第三章 實驗設計與配置 ……………………………………26
3.1覆晶試片準備 ………………………………………27
3.2加熱通電流試驗 ………………………………………31
3.3實驗條件 …………………………………………34
3.4金相觀察 …………………………….…………...35
3.5實驗儀器設備…………………………………………36
第四章 實驗結果與討論 ………………………….………….41
4.1韋伯壽命分佈 ………………………….……………41
4.1.1形狀參數:β韋伯斜率 ………….…………… 42
4.1.2尺度參數:η特徵壽命 ….…………………….42
4.2覆晶銲錫凸塊失效分析 ……………….……………44
4.2.1電流密度的影響:NiAu銲墊之銲錫凸塊 …… 43
4.2.2電流密度的影響:SOP銲墊之銲錫凸塊 …… 52
4.3界面及介金屬化合物析出 …………………………58
4.3.1初始界面反應(Initial Interface Reaction)… 58
4.3.2電子流由銲墊端至晶片端方向 .……………59
4.3.3電子流由晶片端至銲墊端方向 .……………65
第五章 結論 ………………………………………………… 68
第六章 參考文獻 …………………………………………… 69
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