臺灣博碩士論文加值系統

本研究是利用直流濺鍍系統成長氮摻雜二氧化鈦(TiO2:N2)感測薄膜，感測元件是一種多重架構的半導體溼度感測器。感測元件製程中有許多成長參數的變化，分別以四種不同的成長溫度製造出感測材料，並將感測材料進行材料結構特性分析、薄膜表面顆粒大小分析及霍爾(Hall)量測分析，經由材料特性分析，決定適合本研究中適合製造相對溼度感測元件的薄膜材料。經由霍爾效應(Hall effect)量測分析，本研究中的氮摻雜二氧化鈦(TiO2:N2)薄膜為n 型(n-type)，載子濃度和載子飄移率分別為3.4×1018cm3與3.4cm2/Vs，電阻率和導電率分別為1.8Ω-cm與2.9/Ω-cm。經由材料分析結果顯示，當成長溫度為27℃之下的薄膜特性，為較佳的感測薄膜特性，適合應用於濕度感測元件。氮摻雜二氧化鈦(TiO2:N2)濕度感測元件的電阻值量測，濕氣從30%RH升至90%RH的吸附時間為30sec，去吸附時間為65秒，這項結果和其他研究報導比較顯示，本研究的溼度感測器的吸附與去吸附能力相對較佳。而迴滯量測與I-V量測所得到的溼度感測器靈敏度分別為0.12與10.41，這代表本研究論文的溼度感測器有著良好的潛力與濕度感測效果。

The TiO2:N2 relative humidity sensing devices were accomplished in accordance with semiconductor structures. The optimum growth parameter of TiO2:N2 sensing film was decided to fabricate the well-defined relative humidity sensor. In this study, the optimum growth temperature of TiO2:N2 sensing film is at 27oC with well properties in the surface morphology, crystallization, and electronic transportation. By the Hall effect measurement, the TiO2:N2 sensing film is revealed the n-type in carrier type. The carrier concentration and mobility of TiO2:N2 sensing films are 3.4×1018 cm3 and 3.4 cm2/Vs respectively. The resistivity and conductivity of TiO2:N2 sensing films are also 1.8Ω-cm and 2.9/Ω-cm respectively. The TiO2:N2 relative humidity sensing devices were fabricated by using photo lithography and lift-off techniques. The adsorption time and desorption time of TiO2:N2 relative humidity sensing devices are respectively 30 seconds from 30% RH up to 90% RH and 65 seconds from 90% RH down to the 30% RH. The sensitivities of TiO2:N2 relative humidity sensing devices in hysteresis and I-V characteristics are respectively 0.12 and 10.41.

致謝
中文摘要
Abstract
目錄
圖目錄
表目錄
第一章 緒論
1-1研究動機
1-2研究目的
1-3論文架構
第二章 文獻探討
2-1二氧化鈦材料之探討
2-2氮化鈦材料之探討
2-3氮摻雜對二氧化鈦的影響
2-4阻抗式濕度感測元件之探討
2-5電容式濕度感測元件之探討
2-6金氧半濕度感測元件之探討
第三章 研究架構理論與實驗方法
3-1研究架構
3-2研究理論
3-2-1電漿理論
3-2-2物理氣相沈積
3-2-3濺鍍薄膜沉積原理
3-2-4熱蒸鍍薄膜沉積原理
3-2-5霍爾量測原理
3-2-6 X光繞射原理
3-2-7掃描式電子顯微鏡原理
3-2-8能量散射光譜儀原理
3-2-9原子力顯微鏡原理
3-2-10濕度感測原理
3-3 濕度感測材料與元件製作
3-3-1基板與薄膜材料
3-3-2實驗方法與步驟
3-3-3基板清洗與蝕刻
3-3-4濕度感測材料薄膜沉積
3-4 濕度感測元件製作方法
3-4-1六甲基二矽氮烷增強劑
3-4-2光阻
3-4-3旋轉塗佈技術
3-4-4微影技術
3-4-5濕度感測元件製造流程
第四章 研究結果與討論
4-1感測材料量測與分析
4-1-1感測材料霍爾量測分析
4-1-2感測材料X光繞射量測分析
4-1-3感測材料掃描式電子顯微鏡量測分析
4-1-3感測材料能量散射光譜儀量測分析
4-1-4感測材料原子力顯微鏡量測分析
4-2感測元件量測與分析
4-2-1濕度變化對感測元件影響
4-2-2感測元件濕度變化之電阻值時間飄移量測
4-2-3感測元件濕度變化之電感值時間飄移量測
4-2-4感測元件濕度變化之電容值時間飄移量測
4-2-5感測元件濕度變化之電阻值迴滯量測
4-2-6感測元件濕度變化之電感值迴滯量測
4-2-7感測元件濕度變化之電容值迴滯量測
4-2-8感測元件濕度變化之IV量測
第五章 研究結論與未來展望
5-1研究結論
5-2未來展望
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