臺灣博碩士論文加值系統

本實驗利用RF磁控濺鍍法製作二氧化鉬薄膜，利用通入不同流量之氧氣氛(0sccm、5sccm、10sccm、15sccm、20sccm)環境下進行濺鍍，以20sccm氬氣氣氛作為濺鍍氣氛，濺鍍於玻璃基板以及矽基板，並以不同退火溫度進行退火，再利用顯微結構分析(FE-SEM)、結晶結構分析(XRD)、UV-visible以及霍爾量測探討二氧化鉬薄膜之特質。
由實驗得知，在通入氧氣流量之二氧化鉬薄膜，會使得電阻率的下降。在通入20 sccm氧氣流量的二氧化鉬薄膜，有最佳的電阻率、遷移率以及載子濃度，分別為8.45 x 102 Ω-cm、1.3 x 104 cm2/Vs、3.6 x 1011 cm-3。

In this study, we prepared Molybdenum dioxide thin films on glass substrate and silicon substrate by RF magnetron sputtering method with added in different oxide content (unadded, 5 sccm, 10 sccm, 15 sccm, 20 sccm). The effect of oxide content and different annealing temperature on the microstructure and electrical of Molybdenum dioxide thin films will be investigated in this study. The surface microstructure is observed by FESEM (Hitachi S-4700). The crystal structure is analyzed by XRD (PANalytical X’Pert PRO) The electrical is tested by Hall effect measurement (ECOPIA HMS-3000). The optical property is observed by UV-visible photoelectrometer.
In this study, we found that added more and more oxide content can electrical resistivity decreased of Molybdenum dioxide thin films. The film that be added 20 sccm oxide content has best nature. The optimum electrical resistivity of the Molybdenum dioxide film was obtained of 8.45 x 102 Ω-cm with carrier mobility of 1.3 x 104 cm2/Vs and carrier concentration of 3.6 x 1011 cm-3.

中文摘要 I
英文摘要 II
誌謝 III
總目錄 IV
圖目錄 VI
表目錄 XIII
第一章 緒論 1
1-1 前言[1][2][3] 1
1-2 研究動機與實驗目的[4][5] 3
第二章 實驗原理 4
2-1 電漿原理[6][7][8][9] 4
2-2 濺鍍原理[10][11][12] 5
2-3 射頻磁控濺鍍原理 7
2-4 薄膜成核原理 9
第三章 文獻回顧 11
3-1 利用蒸鍍法製作氧化鉬薄膜 11
3-2 利用水熱法製作氧化鉬薄膜 19
3-3 以溶膠-凝膠法製作二氧化鉬薄膜 25
3-4 以磁控濺鍍製作二氧化鉬薄膜 27
第四章 實驗步驟 32
4-1 基板清洗 33
4-2 濺鍍系統及實驗參數 34
4-3 薄膜性質分析設備 37
4-3-1 繞射分析儀(XRD) 37
4-3-2 場發射掃描式電子顯微鏡(FE-SEM) 39
4-3-3 紫外光/可見光分光光譜儀(UV-visible) 41
4-3-4 霍爾效應量測儀(Hall effect measurement) 42
第五章 結果與討論 43
5-1 通入不同氧氣流量進行改質 43
5-1-1 沉積於玻璃基板 43
5-1-1-1未通入氧氣流量 43
5-1-1-2通入5 sccm氧氣流量 51
5-1-1-3通入10 sccm氧氣流量 59
5-1-1-4通入15 sccm氧氣流量 67
5-1-1-5通入20 sccm氧氣流量 75
5-1-2沉積於矽基板 83
5-1-2-1未通入氧氣流量 83
5-1-2-2 通入5 sccm氧氣流量 89
5-1-2-3 通入10 sccm氧氣流量 95
5-1-2-4 通入15 sccm氧氣流量 101
5-1-2-5 通入20 sccm氧氣流量 107
第六章 結論 113
參考文獻 114

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