臺灣博碩士論文加值系統

本論文以脈衝雷射蒸鍍法於c平面藍寶石基板上先沉積一層氧化鋅緩衝層，再鍍上一層氧化鈥鋅薄膜，探討緩衝層在不同溫度、厚度下對氧化鈥鋅薄膜的影響。
以X光繞射檢測結果顯示我們的氧化鈥鋅薄膜為c軸取向，沒有發現任何其他結晶相。且在參雜高濃度鈥元素時引入氧化鋅緩衝層有助於氧化鈥鋅薄膜品質的提升。以PL檢測結果主要的缺陷發光有鋅空缺和鋅間隙，且隨著樣品檢測溫度的降低薄膜發光有增強的趨勢。SQUID檢測結果顯示氧化鈥鋅薄膜在室溫和T=5K時皆為順磁性。

Pulsed-laser deposition (PLD) was applied to grow holmium-doped ZnO(Ho:ZnO) thin films on c-sapphire substrate with different holmium(Ho) concentrations and with ZnO buffer layer. The nominal doping density of Ho ranges from 3％－15％. The physical properties of Ho:ZnO thin films were investigated by x-ray diffraction (XRD), photoluminescence(PL), and superconducting quantum interference device (SQUID). The XRD patterns show that there is no secondary phase.
Photoluminesence spectroscopy showed the major defects are zinc vacancy and interstitial zinc. The m-H curves show paramagnetism of the thin films.

目錄
Chapter 1緒論 1
Chapter 2 材料特性與實驗原理 3
2.1氧化鋅(ZnO)、鈥(Ho)與藍寶石基板(sapphire)性質 3
2.2 X光繞射(X-Ray Diffraction) 6
X光原理 6
布拉格定律 7
2.3光致螢光（Photoluminescence, PL） 8
發光原理 8
氧化鋅的缺陷發光 9
2.4 磁特性與磁交互作用 10
磁性起源 10
2.5超導量子干涉儀(Superconducting Quantum Interference Device , SQUID) 13
Chapter 3 薄膜製成方法和過程 14
3.1薄膜製成簡介 14
3.2脈衝雷射蒸鍍法(Pulsed Laser Deposition, PLD) 14
PLD的優點 14
PLD的缺點 15
PLD的機制 15
3.3儀器介紹 16
3.4靶材製作 17
3.5藍寶石(sapphire)基板清洗 18
3.6鍍膜步驟 19
Chapter 4 實驗結果與討論 20
4.1氧化鋅薄膜在攝氏650度的結構及光學特性 20
4.2緩衝層對氧化鈥鋅薄膜結構性質之影響 22
4.3不同緩衝層溫度的比較 26
4.4不同緩衝層厚度的比較 29
4.5 Zn1-xHoxO/ZnO/c-Sapphire(x=0,0.03,0.05,0.10,0.15)分析 31
變溫PL光譜分析 31
磁性分析 36
Chapter5 結論與未來展望 40
參考文獻 41

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