臺灣博碩士論文加值系統

本論文探討在不同之表面披覆技術下共平面傳輸線之熱穩定性及共平面濾波元件之設計、模擬、製作與其量測特性。
在熱穩定性的研究方面，主要是利用氬離子佈植不同之濃度於P 型高阻值矽基板，討論佈植後加熱及施加偏壓後對傳輸線所造成之影響，並利用MOS電容結構量測基板中載子的狀況。由實驗結果得知，於製程中加入快速熱退火可以有效降低傳輸線的損失。另外，利用高密度化學氣相(high density plasma chemical vapor deposition，HDP-CVD)沉積oxide rich silicon薄膜於高阻值矽基板上，討論回火前後的插入損失。
濾波器元件製作部分，使用IE3D設計共平面結構之低通及帶通濾波器，將其製作於以多晶矽薄膜進行表面披覆之高阻值矽基板上，並針對其量測結果做討論。

The thermal stability of Si-based coplanar waveguide (CPW) was improved by various surface passivations. The Si-based CPW filter was also designed, simulated, and fabricated.
Ar+ ion implantation was adopted to damage the high-resistance (HR) silicon substrate, which could decrease the insertion loss of the CPW. However, the Si grains were recrystallizd after high temperature process, which increased insertion loss of the CPW again and caused the thermal instability. A rapid thermal annealing (RTA) process was performed after the Ar+ ion implantation to retarded the grain growth and improve the thermal instability. The RTA process would also keep Si-based CPW DC independence. The Raman spectrometer and the capacitance-voltage characteristics of metal-oxide-semiconductor (MOS) capacitor were also adopted to analyze the improvement of the thermal stability. The oxide rich silicon was also used to improve the thermal stability of Si-based CPW. The oxygen ions were doped into the Si passivation layer to retard the grain growth and improve the thermal stability.
For the filter fabrication, the simulation software IE3D was used to design and analyze the CPW band-pass and low-pass filter. The CPW filter was fabricated with polycrystalline silicon passivation and the performance was also discussed.

總目錄
摘 要 III
ABSTRACT IV
總目錄 VIII
圖目錄 X
表目錄 XIII
第一章 緒論 1
1-1 研究背景 1
1-2 論文架構 4
第二章 理論基礎與文獻回顧 5
2-1 微帶線基本理論 5
2-2 微波損失來源 9
2-3 濾波器原理 11
2-4 MOS電容特性介紹 13
2-5 MOS電容的氧化層缺陷 19
2-6 離子佈植系統簡述 20
2-7 文獻回顧 21
第三章 實驗方法及步驟 31
3-1 實驗步驟 31
3-2 實驗流程 32
3-2-1 被動元件之製作 32
3-2-2 氬離子佈植試片製作 33
3-2-3 oxide rich silicon 試片製作 34
3-3 製程儀器 38
3-3-1高溫及低壓爐管(Horizontal Furnace) 38
3-3-2電漿輔助式化學氣相沈積&感應耦合式電漿蝕刻系統(PECVD & ICP) 39
3-3-3高密度電漿化學氣相沉積（HDP–CVD） 40
3-3-4多功能真空濺鍍系統(sputtering) 40
3-3-5光罩對準曝光機(Mask aligner MJB3) 41
3-4 物性分析儀器 41
3-4-1 拉曼光譜分析儀 (Raman Spectrometer） 41
3-5 電性量測儀器 42
3-5-1 網路分析儀 42
3-5-2 晶圓級量測法(On-wafer probing) 42
3-5-3 電容-電壓(C-V)量測 43
4-1 離子佈植製程之改善 44
4-1-1 拉曼光譜分析 44
4-1-2 網路分析儀量測 46
4-1-3 電容電壓（C-V）量測 53
4-2 添加氧原子於矽披覆薄膜 57
第五章 以表面披覆之基板製作共平面波導傳輸線及濾波器 60
5-1 共面波導傳輸線製作及量測 60
5-2 低通濾波器之設計與量測 63
5-3 帶通濾波器之設計與量測 67
第六章 結論與未來展望 72
6-1 結論 72
6-2 未來展望 72
參考文獻(Reference) 74

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