臺灣博碩士論文加值系統

由於科技的快速發展，尤其是各種可攜式產品的普及化，大眾對於短距離資料傳輸量的需求快速成長，而傳統電傳輸品質以及頻寬受限於銅纜的物理特性在未來幾年會達到其應用的極限，光纖通訊提供高頻寬介面性質而沒有電訊號傳輸介面的許多缺點，故短距離光纖通訊系統是近年來一項重要的研究議題。
短距離光纖通訊系統由於所需能量小，幾乎都是選用面射型雷射二極體來當作電轉光的媒介，而面射型雷射二極體驅動電路(VCSEL Driver)的前置放大器(Pre-Amplifier)通常是以被動電感將操作頻寬提升上去，優點是設計簡單，但被動電感在佈局(layout)中所占的面積非常大，而且由於電感的繞線在電流通過後容易形成電磁場，在元件位置擺放時，必須使電感彼此遠離，又會占去許多面積，所以此篇論文採用主動電感的方式來大幅減小晶片面積。在所設計的電路中使用了負電容、折疊式主動電感、串疊結構、主動回授電路等拓增頻寬技巧降低了功率消耗。此面射型雷射二極體驅動電路採用了TSMC 0.18μm CMOS製程，同時輸出調變電流範圍設計在5mA到15mA。晶片量測的結果上，前置放大器的功率消耗只需182mW，電路佈局面積則是0.48mm×0.44mm，光訊號量測Bit Rate可到7.5Gb/s。

Due to the wide spread of mobile devices, the needs of short–distance information processing grow fast recently. Since the properties and the bandwidth of electrical communication are restricted by the physical characteristics of copper cables, the application of electrical communication will reach its limit in the near future. However, the optical fiber communication performs well at the high bandwidth interface and has only a few drawbacks at the electrical interface, therefore the short-distance optical fiber communication system has become an important research topic.
Because of low energy consumption of short-distance optical fiber communication system, VCSEL is usually chosen as a trigger for transferring electrical energy to light. The operation bandwidth of Pre-Amplifier in VCSEL driver is usually increased by the inductor due to its simple design. However, the inductor occupies a huge portion of layout, and the coils inside easily generates electromagnetic fields while the current flowing through them. To overcome this issue, the distance between different passive inductor should be extended, which occupies more area in layout. In this thesis, active inductor is introduced to solve the problem above. This design contains negative capacitance, folded active inductor, cascode structure, and active feedback circuit etc. to increase the bandwidth but lower the power consumption. VCSEL Driver is produced by TSMC 0.18μm CMOS fabrication, and the range of current is from 5mA to 15mA. The optical measurement result shows that the power consumption of Pre-Amplifier is only 182mW, the total area of circuit is 0.48mm x 0.44mm, and Bit Rate is 7.5Gb/s.

摘要 i
Abstract ii
致謝 iii
索引 iv
附圖索引 vii
附表索引 x
第一章 緒論 1
1-1. 研究動機 1
1-2. 論文章節架構 4
第二章 雷射二極體與其驅動電路設計考量 5
2-1. 雷射二極體基本原理 5
2-2. 雷射二極體的特性及專有名詞介紹 7
2-2-1 L-I特性曲線(L-I Curve) 7
2-2-2調變電流(Modulation Current) 7
2-2-3熱效應(Thermal Effects) 8
2-2-4開啟延遲(Turn-on Delay) 9
2-3. 垂直共振腔面射型雷射(Vertical Cavity Surface Emitting Laser,VCSEL)簡介 9
2-4. 雷射二極體驅動器操作簡介 10
2-5. 主要待測物理量介紹 11
2-5-1 眼圖(Eye Diagram): 11
2-5-2 上升時間(Rise Time)與下降時間(Fall Time): 12
2-5-3 抖動(Jitter): 12
第三章 雷射二極體驅動器之電路設計 14
3-1. 系統架構(Systems Architecture) 14
3-2. 設計流程 15
3-3. 系統規格 17
3-4. 前置放大器(Pre-Amplifier) 18
3-4-1.輸入級-負電容(Negative Capacitor)： 19
3-4-2.第二級-折疊式主動電感(Folded Active Inductor): 21
3-4-3.第三級-串疊結構+負電容(Cascode+Negative Capacitor): 22
3-4-4.第四級-源極追隨器(Source Follow): 23
3-4-5.主動式回授電路(Active Feedback Circuit): 23
3-4-6固定轉導偏壓電路(Constant Transconductance Bias Circuit): 25
3-5. 輸出級(Output Stage) 27
3-6. 差動驅動(Differential Driver Configuration) 28
3-7. 佈局考量(Layout Consideration) 29
3-8. 模擬結果 32
3-8-1.製程Corner變異(TT/FF/SS)設計結果(Post-Simulation): 33
3-8-2電壓變異考量: 43
3-8-3溫度變異考量: 51
第四章 量測環境與佈局考量 52
4-1.PCB 板設計(Design of PCB) 52
4-2.量測環境及儀器介紹 56
4-3.量測結果 58
4-3-1.電訊號量測結果: 58
4-3-2.光訊號量測結果1: 63
4-3-3.光訊號量測結果2: 66
4-4.量測結果探討 69
4-4-1.電訊號量測結果探討: 69
4-4-1.光訊號量測結果探討: 72
4-5.文獻比較 73
第五章 結論與後續建議事項 75
5-1結論(Conclusions) 75
5-2.後續建議事項(Suggestion) 75
參考文獻 77

[1] 鄒志偉，光纖通訊，五南圖書出版股份有限公司，台北，2011。
[2] R. Tao, M. Berroth, and Z. G. Wang, “Low power 10Gb/s VCSEL driver for optical interconnect,” Electronics Letters, vol. 39, no. 24, pp.1743-1744, Nov. 2003.
[3] B. Razavi, Design of Integrated Circuits for Optical Communication Systems. America: McGraw-Hill, 2003.
[4] E. Sackinger, Broadband Circuits for Optical Fiber Communication. America: John Wiley & Sons Inc., 2005.
[5] M. O'Farrell, “Laser driver design in 0.18μm CMOS technology,” master's thesis, Queen's University, Canada, 2010.
[6] 劉秉澄，應用於10Gb/s之高效能矽鍺限幅放大器設計，碩士論文，清華大學，新竹，2007。
[7] 廖偉傑，標準製程下應用於整合型光通訊接收器之光偵測器元件與訊號放大電路設計，碩士論文，清華大學，新竹，2012。
[8] N. Acharya, P. Chau, J. Dao, A. Feldman, H. J. Liaw, D. Liu, M. Loinaz, M. Luschas, A. Salleh, S. Sheth, S. Sidiropoulos, D. Stark, and S. Verma, “An integrated VCSEL driver for 10Gb/s ethernet in 0.13μm CMOS,” in IEEE International Solid-State Circuits Conference Digest of Technical Papers, Feb. 2006, pp. 930-939.
[9] D. Lee, G. Han, S. M. Park, and W. S. Oh, “A 1.2V 5.2mW 40dB 2.5Gb/s limiting amplifier in 0.18μm CMOS using negative-impedance compensation,” in IEEE International Solid-State Circuits Conference Digest of Technical Papers, Feb. 2007, pp. 56-57.

[10] J. Chen, F. Saibi, J. Lin, and K. Azadet, “Electrical backplane equalization using programmable analog zeros and folded active inductors,” IEEE Transactions on Microwave Theory and Techniques, vol. 55, no. 7, pp. 1459-1466, July 2007.
[11] Maximum Integrated Products Inc., Available: http://www.maximintegrated.com/data
sheet/index.mvp/id/3548
[12] R. Ludwig and P. Bretchko, RF Circuit Design Theory and Applications. New Jersey: Prentice Hall, 2000.
[13] S. Galal and B. Razavi, “10Gb/s limiting amplifier and laser/modulator driver in 0.18μm CMOS technology,” in IEEE International Solid-State Circuits Conference Digest of Technical Papers, Feb. 2003, pp. 188-189.
[14] P. Silvester and P. Benedek, “Microstrip discontinuity capacitances for right-angle bends, T junctions, and crossings,” IEEE Transactions on Microwave Theory and Techniques, vol. 21, no. 5, pp. 341-346, May 1973.
[15] W. S. Oh, K. Y. Park, and S. Lee, “A 4-CH 10-Gb/s CMOS VCSEL driver array with adaptive optical power control,” in International Conference on Advanced Communication Technology, Feb. 2010, pp. 826-829.
[16] J. S. Yun, M. Seo, B. Choi, J. Han, Y. Eo, and S. M. Park, “A 4-Gb/s current-mode optical transceiver in 0.18μm CMOS,” in IEEE International Solid-State Circuits Conference Digest of Technical Papers, Feb. 2009, pp. 102-103.
[17] K. Y. Park, “10-Gb/s optical transmitter and VCSEL driver in 0.13-μm CMOS technology,” master's thesis, Yonsei University, Korea, July 2008.
[18] D. U. Li, “10Gb/s 0.13μm CMOS laser drivers with extinction ratio control using thermistors,” in IEEE International Solid-State Circuits Conference Digest of Technical Papers, Sep. 2009, pp. 260-263.