臺灣博碩士論文加值系統

本論文主要是利用雙靶磁控濺鍍系統沉積氧化銦錫-氧化鋅複合薄膜在高溫無鹼玻璃上，基板溫度在攝氏230oC，觀察薄膜的微結構與光電特性，期望能找到優良性質的複合材料來取代氧化銦錫(ITO)，並應用於市面上常見的光電元件上。
ITO和ZnO靶分別利用DC和RF方式濺鍍，固定在壓力為2.5mTorr，藉由改變ZnO濺鍍功率來沉積不同Zn原子含量(Zn/Zn+In+Sn)的IZTO薄膜。實驗結果顯示，當鋅原子含量達到14~17%左右，其薄膜由氧化銦結構轉變為非晶(amorphous)結構。IZTO透明導電薄膜在可見光範圍內平均穿透度皆超過85％。當Zn原子比例為21.9%時得到最低電阻率為2.59×10-4Ω-cm。
另一方面，為了降低製程成本，壓力一樣維持2.5mTorr，但保持基板在室溫下與不做任何熱處理的條件下去沉積氧化銦錫鋅(ITZO)薄膜。實驗結果發現，當鋅原子摻雜進氧化銦錫，ITZO薄膜在可見光的平均穿透率會遠優於室溫下鍍製之ITO薄膜，且當Zn含量約為18%時，有最佳的電阻率3.3×10-4Ω-cm。

The Zn-In-Sn-O (IZTO) composite films were co-sputtered on non-alkali glass substrate by dual gun magnetron sputtering system at substrate temperature 230℃, and their film structure and optoelectronic properties were in order to find better composite materials to replace ITO in optoelectronic applications.
The ITO and ZnO targets were sputtered by DC and RF discharges, respectively, and the composition of the IZTO films was controlled by varying the RF power on the ZnO target from 0 W to 150 W. The results showed that the deposited IZTO films changed from crystal line to amorphous-like structure as the Zn content reached 14~17%. The IZTO films showed an average transmittance over 85% in the visible wavelength range. The lowest resistivity (2.59×10−4Ωcm) was obtained for the film deposited at the Zn content of was 21.9%.
Furthermore, in order to reduce the cost of the process, we tried to deposit the IZTO films at room temperature and without any heat treatment to deposition IZTO film. The results showed that the average transmission of will IZTO films is far superior to that of the ITO film in the visible region, and when the Zn content is about 18%, the optimal resistivity of 3.3 × 10-4Ω -cm.

書名頁 i
論文口試委員審定書 ii
摘要 iii
Abstract v
誌謝 vi
目錄 viii
表目錄 xi
圖目錄 xii
第一章 緒論 1
1-1 前言 1
1-2 研究背景與目的 5
第二章 文獻回顧 7
2-1 濺鍍原理 7
 2-1-1 電漿理論 7
 2-1-2射頻與直流濺鍍 8
2-2薄膜成長理論[18,19,20,21] 11
2-3透明導電膜 13
 2-3-1 TCO之導電機制 13
 2-3-2 TCO的光學性質 15
 2-3-3 非晶態離子氧化物半導體(IAOS) 16
2-4 ITO-ZnO薄膜介紹 21
第三章 實驗步驟流程與分析儀器 24
3-1 簡介 24
3-2 實驗材料與步驟 24
3-3 薄膜特性分析 26
 3-3-1 成分與結構分析 26
 3-3-3 薄膜微結構分析 27
 3-3-4 表面型態與粗糙度分析 28
 3-3-5 電性量測 28
 3-3-6 光學性質 29
第四章 實驗結果與討論 32
4-1 IZTO薄膜在基板溫度230oC下成長之特性分析 32
 4-1-1 IZTO薄膜之成分與繞射分析 32
 4-1-2 IZTO薄膜之微結構分析 36
 4-1-3 IZTO 薄膜之表面形貌分析 39
 4-1-4 IZTO 薄膜之電性分析 42
 4-1-5 IZTO 薄膜之光性分析 44
4-2 IZTO 薄膜在基板溫度為室溫下成長之特性分析 49
 4-2-1 IZTO薄膜之成分與繞射分析 49
 4-2-2 IZTO薄膜之微結構分析 51
 4-2-3 IZTO 薄膜之表面形貌分析 54
 4-2-4 IZTO 薄膜之電性分析 56
 4-2-5 IZTO 薄膜之光性分析 58
第五章 結論 61
參考文獻 63

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