臺灣博碩士論文加值系統

本論文主要是透過熱化學氣相沉積系統成長碳奈米線圈並將其應用於場發射元件，為了成長碳奈米線圈於場發射元件上，我們藉由黃光室的旋轉塗佈、曝光顯影等定義出陣列孔洞的步驟，再利用電漿蝕刻系統除掉鉬層、濕蝕刻的幫助下去除二氧化矽層和形成可選擇性深度的矽基板孔洞，然後在Mo/SiO2/Si的陣列孔洞內成長碳奈米線圈，最後再進行二極式與三極式結構的場發射特性比較。
研究結果顯示：三極式結構中的閘極對於拉升電子是有幫助，我們也嘗試在陽極加入螢光粉觀察點亮的情形，而結果也顯示碳奈米線圈在三極式結構當中的點亮情形是優於奈米碳管的表現。

In this thesis we use the thermal chemical vapor deposition system to grow the carbon nanocoils and apply them to field emission devices. Firstly, we use the photolithograpic process to define the arrays of hole patterns. Secondly, we use the plasma etching system to remove the Mo layer and wet etching to remove the SiO2 layer and form the holes on Si substrate. Finally, we grow the carbon nanocoils outo the arrays of Mo/SiO2/Si substrate. We compare the field emission characteristics between the diode and triode structures.
The results show that the gate of the triode structure is beneficial to pull the electrons. We also try to add phosphors on the anode to observe the lighting phenomenon. The results also show that the lighting phenomenon of the carbon nanocoils is superior to that of the carbon nanotubes in the triode structure.

致謝；I
摘要；II
Abstract；III
表目錄；VII
圖目錄；VIII
第一章 序論；1
1.1 場發射理論；1
1.2 顯示器簡介；5
1.2.1 平面顯示器；5
1.2.2 場發射顯示器；6
1.2.3 1陰極場發射；7
1.2.3.1以SPINDT做為陰極場發射源；7
1.2.3.2以碳奈米線圈做為陰極場發射源；8
1.3燈源介紹；9
1.3.1傳統燈源；9
1.3.2節能燈源；9
1.3.3 場發射燈源；12
1.3.3.1 平面式場發射燈源；12
1.3.3.2 燈管式場發射燈源；13
1.4 文獻回顧；14
1.5 研究動機及目的；18
第二章碳奈米線圈的性質；19
2.1 碳材料簡介；19
2.1.1 碳六十；20
2.1.2 石墨；22
2.1.3類鑽碳；23
2.1.4奈米碳片；25
2.1.5奈米碳管；28
2.2 碳奈米線圈；29
2.2.1 發展簡介；29
2.2.2 成長機制；32
2.2.3 觸媒製備方法；35
2.2.3.1 物理法；35
2.2.3.2 化學法；37
2.2.4 製備方法；38
2.2.4.1 熱化學氣相沉積法；39
第三章 實驗過程；40
3.1 實驗流程；40
3.2 閘極金屬之濺鍍；41
3.3 電漿蝕刻系統；42
3.4 濕蝕刻；43
3.5 催化劑之濺鍍；45
3.6 熱化學氣相沉積系統；48
3.7 拉曼光譜儀；50
3.8 掃描式電子顯微鏡；52
3.9 電子場發射量測系統；52
第四章 結果與討論；55
4.1 最佳條件選區成長碳奈米線圈參數；55
4.1.1金屬鉬之濺鍍參數；5
4.1.2 1BOE與 KOH之蝕刻參數；57
4.1.3催化劑 ITO薄膜和鐵薄膜之濺鍍參數；61
4.1.4碳奈米線圈的成長參數；62
4.2奈米碳管與碳奈米線圈特性之比較；63
4.3三極式結構場發射點亮之結果；68
第五章結論及未來展望；72

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