臺灣博碩士論文加值系統

本研究利用旋轉塗佈法製備背向式奈米碳管場發射照明元件，取代目前通用的製程，如直接化學氣相成長製程、網印製程、電泳製程等。本製程具有眾多優點，例如製程簡化、陰極板透明化、穩定性高、有良好的場發射效應、塗層擁有良好的均勻性質，且可達到良好的場發射效應並使螢光陽極板發光後反射光於陰極板透射出，也能擁有均勻且高的亮度。
本研究主要以旋轉塗佈法(spin coating)來製備奈米碳管背向式場發射陰極。先使用不同濃度比例之界面活性劑十二烷基硫酸納(SDS)與奈米碳管(CNT)製備奈米碳管溶液，輔以紫外光光譜儀(UV-vis)探討其分散程度。並使用旋轉塗佈機將其塗佈於銦錫氧化物(ITO)玻璃基板表面上與圖形化的ITO玻璃基板，製作場發射陰極並探討場發射特性，以及場發射亮點的均勻度。經不同熱處理進行奈米碳管於基板上之特性影響。最後經由附著性與均勻性進行改善，提升場發射發光之穩定性，研究塗層已可具有良好的均勻性和達到良好的場發射效果，最後再以場發射電子顯微鏡(FE-SEM)觀察塗層的奈米碳管分布與裸露情形，並將製備好塗層元件進行場發射發光與場發射電流密度電場測試(J-E curve)。

The purpose of this study was to replace the current common processes, such as chemical vapor deposition direct growth, screen printing and electrophoresis process for the fabrication of carbon nanotube (CNT) field emission illumination device. This process has many advantages, such as the process is easy, transparent cathode plate, high stability, good field emission, uniform coating with good properties, and achieve a good field emission fluorescent anode plate and to send light the reflected light of light transmission from the cathode plate can also have a uniform and high brightness.
In this thesis, we fabricate inverse-type CNT field emission illumination device cathode by spin coating method. The first use of different concentrations of surfactant sodium dodecyl sulfate (SDS) and CNTs were blended into a solution, supplemented by ultraviolet spectroscopy (UV-vis) of the dispersion. The indium tin oxide (ITO) substrates and pattern ITO substrates were spin coated into the solution, the production of field emission cathodes and field emission characteristics, and light the uniformity of field emission. The CNT of the substrate effects of different heat treatment were characteristics. Finally, adhesion and uniformity through the improvement the stability of field emission light, the research already has a good coating uniformity and to achieve a good field emission effect, and then CNTs distribution of the coated layer were observed with field emission electron microscope (FE-SEM). The field emission properties of the prepared cathodes were evaluated with the field emission pattern and J-E curve test.

中文摘要…………………………………………………………………………… i
英文摘要…………………………………………………………………………… ii
誌謝……………………………………………………………………………… iii
目錄………………………………………………………………………………… iv
表目錄……………………………………………………………………………… vii
圖目錄…………………………………………………………………………… viii
第一章 緒論…………………………………………………………………………1
1.1研究背景…………………………………………………………………1
1.2研究動機與目的………………………………………………………2
第二章 文獻回顧與基礎理論……………………………………………………4
2.1場發射技術之發展……………………………………………………4
2.2電子發射機制與場發射原理……………………………………………6
2.2.1 電子發射種類………………………………………………………6
2.2.2 功率函數………………………………………………………… 7
2.2.3 場發射原理………………………………………………………8
2.3場發射陰極製程技術……………………………………………………12
2.3.1 Spindt型…………………………………………………………12
2.3.2 SCE型…………………………………………………………12
2.3.3 BSD型…………………………………………………………13
2.3.4 CNT型…………………………………………………………14
2.4奈米碳管場發射陰極之各種製備技術………………………………16
2.4.1 化學氣相沉積法…………………………………………………16
2.4.2電泳法……………………………………………………………17
2.4.3網印法……………………………………………………………18
2.4.4浸鍍法……………………………………………………………19
2.4.5噴鍍法……………………………………………………………19
2.4.6旋轉塗佈法………………………………………………………20
2.4.7各種製備技術其優缺點比較……………………………………21
第三章 實驗方法…………………………………………………………………22
3.1 實驗步驟與流程圖……………………………………………………22
3.1.1奈米碳管的分散…………………………………………………23
3.1.2玻璃基材塗前處理………………………………………………23
3.1.3以ITO玻璃基材探討旋轉塗佈之最佳參數……………………25
3.1.4旋轉塗佈層背向式平面燈源的場發射測試……………………25
3.2 實驗藥品及儀器………………………………………………………26
3.2.1實驗藥品…………………………………………………………26
3.2.2實驗儀器…………………………………………………………27
3.3 其他檢測分析儀器……………………………………………………31
第四章 結果與討論……………………………………………………………… 33
4.1 CNT卅ITO玻璃場發射陰極製備………………………………………33
4.1.1 界面活性劑對奈米碳管分散性質之影響…………………………33
4.1.2 奈米碳管旋塗後之表面形貌………………………………………34
4.1.3 不同旋塗次數對CNT卅ITO玻璃場發射陰極場發特性之影響…36
4.1.4 不同熱處理時間對CNT卅ITO玻璃場發射陰極場發特性之影響37
4.1.5 小結…………………………………………………………………40
4.2 CNT卅ITO玻璃場發射陰極之附著性改善研究………………………41
4.2.1 基材前處理-AirrinPV-100………………………………………41
4.2.2 基材前處理-PDDA………………………………………………43
4.2.3 基材後處理-玻璃燒結……………………………………………45
4.2.4 小結…………………………………………………………………47
4.3 CNT卅ITO玻璃場發射陰極之均勻性改善研究………………………48
4.3.1 基材前處理-圖形化……………………………………………48
4.3.2 基材前處理-粗糙化……………………………………………51
4.3.3 小結………………………………………………………………54
第五章 結論…………………………………………………………………………55
參考文獻……………………………………………………………………………56
簡歷…………………………………………………………………………………61

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