臺灣博碩士論文加值系統

本研究論文中，第一章為非揮發性電阻式記憶體介紹，描述非揮發性記憶體的研究背景與動機，並對電阻式記憶體基本架構與電阻轉換機制進行介紹；第二章為實驗製程與材料及電性量測介紹，並說明各種的彎曲條件測試；第三章討論單層與雙層軟性元件在彎曲前、中、後之電性特性比較，並推論其電阻轉態機制；第四章則是將實驗結果與電性特性比較作總結。
此研究中，以Al2O3薄膜改善TiO2軟性電阻式記憶體之特性，根據實驗結果， Al/ Al2O3/TiO2/Al雙層軟性元件在彎曲中量測具有高耐久力，在彎曲後量測具有更穩定的電阻轉換特性，推測Al2O3薄膜控制轉態位置發生在界面上，且彎曲時由應力所產生的缺陷會參與傳導，使得電阻轉態趨於穩定。元件進行彎曲次數測試，發現彎曲次數對元件影響不大，且彎中與彎後之電性特性一致，證明Al/Al2O3/TiO2/Al軟性元件具有良好的電性與彎曲特性。

In this thesis, chapter 1 introduces the non-volatile resistive random access memory (RRAM). It describes the background and motivation of non-volatile RRAM and introduces the basic structure and resistive switching mechanism of RRAM. Chapter 2 introduces experimental fabrication and material and electrical measurements. It also explains the method of bending test. Chapter 3 discusses material and electrical characteristics of the Al/Al2O3/TiO2/Al and Al/TiO2/Al devices before bending, under bending and after bending. We infer a possible resistive switching model in this chapter. Finally, chapter 4 concludes the experimental results.
In this study, the Al/Al2O3/TiO2/Al flexible RRAM is improved by adding Al2O3 thin film. According to the experimental results, Al/Al2O3/TiO2/Al flexible RRAM has high endurances under bending and has more stable resistive switching characteristics. We infer that the switching position might happen at the interface between Al2O3 and TiO2 films. When the flexible device is under bending, it might produce some defects by stress. The defects might involve in resistive switching, so that make resistive switching characteristics more stable. After the device is bent for several times, we found that the flexible device is unaffected by bending times and the electrical characteristics of under bending and after bending samples are coincident. These results prove that the Al/ Al2O3/TiO2/Al flexible device has excellent flexibility and electrical characteristics, which is possibly used in next-generation flexible electronics.

致謝 I
摘要 II
Abtsract III
目錄 IV
表目錄 VI
圖目錄 VII
第一章 非揮發性電阻式記憶體介紹 1
1.1 研究背景 1
1.2 研究動機 2
1.3 非揮發性記憶體簡介 2
1.4 非揮發性電阻式記憶體材料介紹 3
1.5 電阻轉換特性 5
1.6 電阻轉換機制 6
1.7 導電機制 7
第二章 元件製程與量測分析 21
2.1 非揮發性電阻式記憶體元件製程設備 21
2.2 非揮發性電阻式記憶體元件製作流程 21
2.3 電性量測分析與彎曲測試 22
2.4 材料分析 24
第三章 結果與討論 31
3.1 材料分析 31
3.1.1 場發射掃描式電子顯微鏡 31
3.1.2 X射線光電子能譜 31
3.2 Al/Al2O3/TiO2/Al元件之彎曲前、中、後與彎曲次數比較 32
3.2.1 元件彎曲前電性分析 32
3.2.2 元件彎曲中電性分析 33
3.2.3 元件彎曲後電性分析 34
3.2.4 元件彎曲前、中、後電性分析比較 35
3.2.5 元件第二次彎曲中、後電性分析 37
3.2.6 元件第三次彎曲中、後電性分析 38
3.2.7 元件第一、二、三次彎曲中、後電性分析比較 38
3.3 Al/TiO2/Al與Al/Al2O3/TiO2/Al元件之彎曲前、中、後比較 39
3.3.1 Al/TiO2/Al與Al/Al2O3/TiO2/Al元件之彎曲前電性分析 39
3.3.2 Al/TiO2/Al與Al/Al2O3/TiO2/Al元件之彎曲中電性分析 40
3.3.3 Al/TiO2/Al與Al/Al2O3/TiO2/Al元件之彎曲後電性分析 41
3.3.4 Al/TiO2/Al與Al/Al2O3/TiO2/Al元件之彎曲前、中、後電性分析比較 41
3.4 彎曲前、中、後之模型推論 43
第四章 結論 77
參考文獻 79

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