臺灣博碩士論文加值系統

本論文利用磁控濺鍍機（Magnetron sputter），在室溫下沉積氧化鋅和二氧化矽奈米複合薄膜（ZnO-SiO2 nanocomposite）作為吸收層，應用於軟性塑膠基板（polyethersulfone，PES），製作出具有高偵測率（Detectivity）及低雜訊之可撓式solar-blind光偵測器（flexible solar-blind photodetector）。在逆向偏壓10 V下，元件的響應峰值位於240 nm，光響應度（responsivity）和量子效率（quantum efficiency）分別為0.75 A/W和482%，並且具有約五個數量級的紫外光對可見光拒斥比（UV-to-visible rejection ratio）。
利用有機矽基薄膜（SiOx(CH3)）作為氧化鋅和二氧化矽奈米複合薄膜（ZnO-SiO2 nanocomposites）和基板間的緩衝層，有效的降低奈米複合薄膜內部應力，提升光偵測器的元件特性，並且降低奈米複合薄膜沉積於塑膠（PES）和藍寶石（sapphire）不同基板上所造成的元件特性差異。
可撓式光偵測器經過撓曲（bending）量測後，其光響應度（responsivity）和紫外光對可見光的拒斥比（UV-to-visible rejection ratio）皆隨著曲率半徑越小而有些微的衰減，然而，元件依舊具有良好的光電特性，尤其是具有有機矽基薄膜（SiOx(CH3)）緩衝層的可撓式光偵測器（flexible photodetector），其緩衝層減緩撓曲時施加於奈米複合薄膜上的應力（stress），因此減緩光電特性的衰退。

In this research, we deposited ZnO-SiO2 nanocomposite by magnetron sputter at room temperature and used it as the absorption layer on the flexible polyethersulfone (PES) substrate to fabricate a high detectivity and low noise flexible solar-blind photodetector. At a 10 V reverse bias, the maximum responsivity value and quantum efficiency of the device were 0.75 A/W and 482% at 240 nm respectively, and it showed a high UV-to-visible rejection ratio up to ~105.
We used silicon-based organic thin film (SiOx(CH3)) as the buffer layer between ZnO-SiO2 nanocomposite and substrate. The buffer layer enhanced the characteristics of photodetectors because it suppressed the stress of ZnO-SiO2 nanocomposite effectively. It also reduced the characteristic difference between nanocomposites deposited on polyethersulfone (PES) and sapphire.
By bending measurement, the responsivity and UV-to-visible rejection ratio of flexible photodetectors slightly decayed when the radius of curvature decreased. However, all devices still remain favorable photoelectric properties, especially the flexible photodetector with silicon-based organic thin film (SiOx(CH3)). The SiOx(CH3) layer released stress on the nanocomposite during bending measurement; therefore, the reduction of photoelectric properties was suppressed.

摘要 I
Abstract II
誌謝 III
目錄 IV
表目錄 VII
圖目錄 VIII
第一章 序論 1
1-1 氧化鋅奈米結構之發展 2
1-2 光偵測器之簡介 4
1-3 研究動機 5
參考文獻 7
第二章 理論基礎 11
2-1 光偵測器運作原理 11
2-1-1 金屬－半導體之蕭特基能障原理 11
2-1-2 金屬－半導體－金屬之蕭特基光偵測器運作原理 20
2-2 光響應度和量子效率 23
2-3 雜訊等效功率和偵測率 26
參考文獻 29
第三章 元件結構與製程 32
3-1 製程和量測儀器介紹 32
3-2 元件結構與製程步驟 36
第四章 實驗結果與討論 44
4-1 氧化鋅和二氧化矽奈米複合薄膜特性分析 44
4-1-1 薄膜應力量測 44
4-1-2 穿透率量測 46
4-2 光響應量測之特性分析 49
4-2-1 暗電流與光電流之比較 49
4-2-2 光響應度之比較 53
4-2-3 響應時間之分析 59
4-3 不同照光強度下之元件特性分析 64
4-4 雜訊等效功率和偵測率之特性分析 70
4-5 撓曲特性分析 76
參考文獻 84
第五章 結論和未來展望 86
5-1 結論 86
5-2 未來展望 89

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