臺灣博碩士論文加值系統

我們探討了砷化鋁鎵(AlGaAs)布拉格反射鏡(DBR)的結構、特性、及側向濕氧化、離子佈植等製程之效應。AlxGa1-xAs的穩定氧化物是非晶體、固相的(AlxGa1-x)2O3；對於埋藏在多層磊晶結構中的AlxGa1-xAs，控制載流氣體的組成與流量、氧化溫度與時間、AlxGa1-xAs層之鋁含量與厚度等參數，即可建立一穩定之側向氧化製程；佈植氧離子的AlGaAs布拉格反射鏡，在350~450℃的溫度範圍內，其側向氧化速率會增快，其中，當氧化條件為400℃、10分鐘時，佈植氧離子能使氧化速率增快約1.3倍，我們認為佈植氧會促使氧化層與半導體層間的表面能量或應力發生變化，因此加速了氧化速率。另外，佈植氫、氧、矽、磷等不同離子源的布拉格反射鏡，反射頻譜的中心波長將往長波長漂移，背景反射率也會上升，根據模擬與推論結果，這主要與鋁原子的交互擴散(interdiffusion)有關。最後，對具有DBR結構之面射型發光二極體(DBR LED)或垂直共振腔面射型發光二極體(RCLED)，其光電特性亦藉由側向氧化或離子佈植而獲得改善。

We discuss the effects of lateral wet oxidation and ion implantation on AlGaAs DBRs. The AlxGa1-xAs oxide is stable, amorphous, solid-phase (AlxGa1-x)2O3. For AlxGa1-xAs layers embedded in multi-layer structure, a stable oxidation process is achieved by precisely control the flow rate of carrier gas, oxidation temperature and oxidation period, the thickness of AlxGa1-xAs layers, etc. The oxidation rate of the DBR implanted with oxygen ions will be enhanced at the temperature range of 350~450℃. We thought the enhanced oxidation rate is dominantly resulted from the change of surface energy or strain between oxide layers and epi-layers. In addition, for the DBRs implanted with hydrogen, oxygen, silicon, or phosphorous ions, respectively, the central wavelength of reflectivity spectra will shift toward longer wavelength and the background reflectance is increased. According to our calculation and discussions, those are related to inter-diffusion of aluminum atoms in DBR. Finally, for the surface-emitting LED or RCLED with DBR structure, its optoelectronic properties are improved by additional process of lateral wet oxidation or ion implantation.

一　緒 論
二　理論簡介
三　砷化鋁鎵布拉格反射鏡之離子佈植研究
四　砷化鋁鎵布拉格反射鏡之側向濕氧化研究
五　磷化鋁銦鎵發光二極體之側向濕氧化與砷化鎵垂直共振腔發光二極
　體之離子佈植研究
六　結論

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