臺灣博碩士論文加值系統

氧化鋅(ZnO)是具寬能隙（3.37 eV）與高激子束縛能（60 meV）的半導體材料。一維氧化鋅奈米材料，具有優異光電特性，可應用在奈米電子和光電元件。本論文，以微波水熱法快速成長準直性佳之氧化鋅奈米柱在已沉積AZO晶種層之銦錫氧化物(Indium Tin Oxide, ITO)玻璃基板上。改變氫電漿預處理晶種層時間、成長反應時間，以得最佳氧化鋅奈米柱之成長條件。探討氫電漿預處理晶種層對氧化鋅成長之反應機制。並以不同氣體對成長後之氧化鋅奈米柱做退火處理，以強化氧化鋅奈米柱之光學特性。以XPS探討氧化鋅之鍵結特性。將石墨烯轉印在 ITO玻璃基板上，探討對成長氧化鋅奈米柱之品質與光學特性之影響。
研究結果顯示，經氫電漿處理後，晶種層表面粗糙度與結晶性增加，氧化鋅奈米柱之準直性與成長速率明顯的提昇，以微波水熱法合成氧化鋅奈米柱，其平均成長速率約為2.2 μm/hr，明顯優於其他合成方法。反應時間為20、40、60 min成長氧化鋅奈米柱之鋅氧原子比值，分別為1.09、0.98、0.96，隨著反應時間增加，氧所占百分比會下降，合成反應時間長，氧空缺數目增加，導致氧原子比例下降。氧化鋅奈米柱以N2退火處理可以得到品質較良好的氧化鋅奈米柱。氧化鋅奈米柱 為單晶結構具堆疊缺陷與尖錐或蠟燭狀之形貌。
轉印石墨烯之基板成長氧化鋅奈米柱，具有比較優異的光學特性，有高比表面積與高電子遷移率，製備成染料敏化太陽能電池之工作電極，光電轉換效率比氧化鋅奈米柱成長在未轉印之ITO基板，提升約2倍。氧化鋅奈米柱作為工作電極其轉換效率仍然偏低，因為氧化鋅浸泡染料後對光之吸收率會降低。氧化鋅奈米柱作為染料敏化太陽能電池之工作電極，仍需探討其製程技術與材料特性，以期提升其效率。

ZnO (Zinc Oxide) is a wide band gap (3.37eV) semiconductor with a large exciton binding energy (60meV). 1-D ZnO nano-materials with excellent optical and electrical properties can be used in nanoelectronics and optoelectronic devices. In this thesis, Well-aligned ZnO nanorods were rapidly grown on ITO glass substrate using AZO thin film as seed layer by microwave hydrothermal method. The optimal ZnO growth conditions were obtained by adjusting the seed layer H2 plasma pretreatment time and synthesis time. H2 plasma effect of the seed layer on the alignment, growth rate and crystallinity of ZnO nanorods has been studied. The prepared ZnO nanorods were annealed in various gases to enhance the optical properties. X-ray photoelectron spectroscopy (XPS) analysis was used to determine the composition and chemical bounding state. Characteristic and optical properties of ZnO nanorods synthesized on graphene/ ITO substrate were investigated. The results show that the alignment and growth rate of ZnO nanorods depends on the characteristic and roughness of the seed layer, which can be improved by H2 plasma pretreatment. The average growth rate of ZnO nanorods synthesized by microwave hydrothermal method is about 2.2 μm/hr which significantly superior to other techniques. Zn/O atomic ratios are 1.09, 0.98, and 0.96 with 20, 40, 60 min ZnO nanorods synthesis time. The oxygen contents decrease with increasing reaction time. Due to the number of oxygen vacancies increase. After N2 annealing treatment good quality ZnO nanorods were obtained. ZnO nanorods are single crystal with stacking defects and pyramid or candle shape. ZnO nanorods synthesis on graphene/ITO substrate has high electronic mobility and specific surface area while fabricated as working electrode of dye-sensitized solar cells (DDSCs). The conversion efficiency is 2 times than ZnO nanorods synthesis on ITO substrate. ZnO soaked in dye would decrease light absorbance that decrease the conversion efficiency of ZnO as an electrode of DSSCs.

摘要......................................................i
Abstract.................................................ii
誌謝....................................................iii
目錄......................................................iv
表目錄....................................................vi
圖目錄...................................................vii
第一章 緒論................................................1
1.1前言.........................................................1
1.2奈米材料之特性...........................................1
1.3研究動機.................................................5
第二章 文獻回顧.............................................6
2.1氧化鋅晶體結構與特性......................................6
2.1.1晶體結構...............................................6
2.1.2導電性質...............................................9
2.1.3光學性質...............................................9
2.1.4力學性質..............................................10
2.1.5能帶間隙..............................................10
2.1.6 激子束縛能...........................................10
2.1.7 壓電特性.............................................11
2.2 摻鋁氧化鋅薄膜之特性....................................11
2.3 氫電漿預處理...........................................12
2.4 氧化鋅奈米柱之合成方法..................................12
2.4.1 氣-液 固成長機制.....................................13
2.4.2 金屬有機化學氣相沉積法................................14
2.4.3 電化學沉積法.........................................15
2.4.4 溶液成長機制.........................................16
2.5微波化學................................................18
2.6太陽能電池簡介..........................................19
2.6.1 太陽能電池工作原理....................................19
2.6.2 太陽能電池種類.......................................20
2.7石墨烯簡介..............................................22
第三章 實驗方法與步驟......................................24
3.1 氧化鋅晶種層之製備與氫電漿表面處理.......................24
3.1.1 透明導電玻璃基板前處理................................24
3.1.2 以射頻濺鍍系統成長AZO氧化鋅薄膜晶種層...................24
3.1.3 以氫電漿預處理AZO晶種層...............................24
3.2 合成溶液之配製.........................................26
3.3 微波水熱法成長氧化鋅奈米柱...............................26
3.4 染料敏化太陽能電池之製作.................................28
3.4.1 ZnO奈米柱工作電極製作.................................28
3.5 石墨烯之合成與轉印過程..................................29
3.5.1石墨烯之合成..........................................29
3.5.2石墨烯之轉印..........................................30
3.6儀器...................................................32
3.6.1 濺鍍機(Sputtering)..................................32
3.6.2 電漿輔助化學氣相沉積(PECVD)...........................34
3.6.3 微波合成系統.........................................36
3.6.4 X光粉末繞射儀(XRD)..................................36
3.6.5 掃描式電子顯微鏡(Scanning Electron Microscopy, SEM)...38
3.6.6 高解析電子能譜儀(HRXPS)...............................39
3.6.7 傅立葉轉換紅外線光譜儀................................40
3.6.8 四點探針............................................41
3.6.9 太陽能光源模擬系統....................................42
3.6.10 分光光譜分析儀(UV/visible)..........................43
3.6.11 霍爾量測儀..........................................44
第四章 結果與討論..........................................46
4.1 氫電漿預處理晶種層對合成氧化鋅奈米柱之效應.................46
4.2 不同反應時間對氧化鋅奈米柱合成之效應......................49
4.3 其他合成方式與微波水熱法成長氧化鋅奈米柱之比較.............52
4.4 不同反應時間合成氧化鋅奈米柱之XPS特性分析.................54
4.5 以不同氣體對氧化鋅奈米柱做退火處理之XPS特性分析............58
4.6 ITO與Graphene/ITO薄膜之特性分析比較.....................64
4.7 光電轉換效率分析........................................65
4.7.1 ZnO/AZO/ITO 工作電極之染料敏化太陽能電池光伏特性........65
4.7.2 ZnO/AZO/Graphene/ITO工作電極之染料敏化太陽能電池光伏特性67
4.7.3 以不同碳材料添加TiO2薄膜工作電極之染料敏化太陽能電池光伏
特性......................................................69
4.8 氧化鋅浸泡染料前後之光學特性探討..........................71
第五章 結論...............................................75
參考文獻...................................................77
作者簡介...................................................85

[1]R. Feynman, “Plenty of Room at the Bottom”, APS Annual Meeting (1959).
[2]羅吉宗, 戴明鳳, 林鴻明, 鄭振宗, 蘇程裕, 吳育民, 奈米科技導論, 全華圖書
[3]R. Kubo, “Electronic Properties of Metallic Fine Particles”, I. J. Phys.Soc. Jpn. 17 (1962) 975.
[4]E. L. Paradis, A. J. Shuskus,“RF Sputtered Epitaxial ZnO Films on Sapphire for Integrated Optics”, Thin Solid Films 1976, 38, 131.
[5]M. Chen, Z. L. Pei, X. Wang,C. Sun, L. S. Wen,“Structural, electrical, and optical properties of transparent conductive oxide ZnO:Al films prepared by dc magnetron reactive sputtering”, J. Vac. Sci. Technol. A19 (2001) 963
[6]R. F. Service, science,“ Will UV lasers beat the blues ”, 1997, 276, 895.
[7]J. S. Jie, G. Z. Wang, Q.T. Wang, Y. M. Chen, X. H. Han, X.P. Wang, J.G. Hou,“Synthesis and Characterization of Aligned ZnO Nanorods on Porous Aluminum Oxide Template”, J. Phys. Chem. B 108 (2004) 11976.
[8]J. C. Johnson, K. P. Knutsen, H. Q. Yan, M. Law, Y. F. Zhang, P. D. Yang, R. J. Saykally, “Ultrafast Carrier Dynamics in Single ZnO Nanowire and Nanoribbon Lasers”, Nano Lett. 4 (2004) 197.
[9]F. Hickernell,“Zinc-Oxide ThinlFilm Surface-Wave Transducers” , Proceedings of the IEEE, Vol. 64, No. 5, May 1976, pp. 631.
[10]M. Hiramatsu, K. Imaeda, N. Horio, M. Nawata, J. Vac. Sci.Technol. ,“Transparent conducting ZnO thin films prepared by XeCl excimer laser ablation”,1998, A16, 669.
[11]N. Chubachi,“ZnO Films for Surface Acoustooptic Devices on Nonpiezoelectric Substrates”, Proc. IEEE 1976, 64, 772.
[12]Y. W. Heo, F. Ren, D. P. Norton, in Zinc Oxide: Bulk, Thin Film s and Nanostructures, (Elsevier, Oxford, 2006), pp. 491 - 523.
[13]J. Tornow, K. Schwarzburg,“Transient Electrical Response of Dye-Sensitized ZnO Nanorod Solar Cells”, J. Phys. Chem. C 111 (2007) 8692.
[14]A. J. Nozik, Quantum Structured Solar Cells In Nanostructured Materials for Solar Energy ; Elsevier Science: New York, 2006.
[15]M. S. White, D.C. Olson, S.E. Shaheen, N. Kopidakis, D. S. Ginley,“Inverted bulk-heterojunction organic photovoltaic device using a solution-derived ZnO underlayer” “,Appl. Phys. Lett. 89 (2006) 143517
[16]J. F. Huang, C. K. Xia, L. Cao, X. Zeng ,“Facile microwave hydrothermal synthesis of zinc oxide one-dimensional nanostructure with three-dimensional morphology”, Materials Science and Engineering B 150(2008) 187–193.
[17]B. Meyer and D. Marx, “Density-functional study of the structure and stability of ZnO surfaces” , Phys. Rev. B 67 (2003) 035403.
[18]T. J. Boyle, S. D. Bunge, N. L. Andrews, L. E. Matzen, K. Sieg, M. A. Rodriguez, and T. J. Headley,“Precursor Structural Influences on the Final ZnO Nanoparticle Morphology from a Novel Family of Structurally Characterized Zinc Alkoxy Alkyl Precursors”, Chem. Mater., Vol. 16, , (2004). pp. 3279-3288.
[19]M. Izaki, and T. Omi, “Characterization of Transparent Zinc Oxide Films Prepared by Electrochemical Reaction”, J. Electrochem. Soc., Vol. 144, (1997) pp. 1949-1952.
[20]N. Fujimura, T. Nishihara, S. Goto, J. Xu, and T. Ito, “Control of Preferred Orientation for ZnOx Films: Control of Self-texture”, J. Cryst. Growth, Vol.130 (1993) , pp. 269-279.
[21]K. Ellmer , A. Klein , B. Rech, Transparent conductive zinc oxide, Springer.
[22]D. C. Agarwal, R. S. Chauhan, A. Kumar, D. Kabiraj, F. Singh, S. A. Khan, D. K. Avasthi, J. C. Pivin, M. Kumar, J. Ghatak, and P. V. Satyam, “Synthesis and Characterization of ZnO Thin Film Grown by Electron Beam Evaporation”, J. Appl. Phys., Vol.99 (2006) , pp. 123105-1-123105-6.
[23]C. Gumus, O. M. Ozkendir, H. Kavak, and Y. Ufuktepe, “Structural and Optical Properties of Zinc Oxide Thin Films Prepared by Spray Pyrolysis Method”, J. Optoelectron. Adv. M., Vol.8 (2006) , pp. 299-303.
[24]V. Srikant and D. R. Clarke, "On the optical band gap of zinc oxide", J. Appl. Phys., 83(1998), 5447-5451.
[25]Jai Singh, “Optical Properties of Condensed Matter and Applications”, (2006) John Wily ＆ Sons, Ltd, England
[26]N. Kavasoglu, and A. S. Kavasoglu, “Metal-Semiconductor Transition in Undoped ZnO Films Deposited by Spray Pyrolysis”, Physica B, Vol. 403,(2008) pp. 2807-2810.
[27]朱建國，孫小松，李衛.電子與光電子材料.北京:國防工業出版社(2007).
[28]D. H. Zhang, D.E. Brodie, “Crystallite orientation and the related photoresponse of hehexagonal ZnO films deposited by r.f. sputtering. ”, Thin Solid Films 238, (1994)95.
[29]T. Minami, H. Nanto and S. Takata, “Highly Conductive and Transparent Aluminum Doped Zinc Oxide Thin Films Prepared by RF Magnetron Sputtering”,Jpn. J. Appl. Phys, Vol.23, (1984). pp.L280-L282.
[30]T. Minami, H. Sato, K. Ohashi, T. Tomofuji and S. Takata, “Conduction mechanism of highly conductive and transparent zine oxide thin films prepared by magnetronsputtering ”,J.Cry.Grow.,117 (1992), 370-374.
[31]K. Wasa, “Handbook of Sputter Deposition Technology”, (1992), 98.
[32]B. Chapman, “Glow Discharge Processes”, John Wiley &; Sons. Inc.N.Y., (1980), chap6.
[33]H. L. Hartnagel, A. k. Jagadish,”Semiconducting Transparent Thin Films”, (1995) , published by Physics Publishing.
[34]D. H. Zhang, T. L. Yang, J. Ma, Q. P. Wang, R. W. Gao, and H. L. Ma,”Preparation of transparent conducting ZnO:Al films on polymer substrates by r.f. magnetron sputtering”, Applied Surface Science, 158, 2000, pp. 43-48.
[35]Wan-Yu Wu, Chun-Ching Yeh, and Jyh-Ming Ting, “Effects of seed layer characteristics on the synthesis of ZnO nanowires ,” Journal of the American Ceramic Society, 92, 11, 2718-2723, 2009.
[36]H. Ghayour, H. R. Rezaie, S. Mirdamadi, A. A. Nourbakhsh, Vacuum 86 (2011)101
[37]S. Y. Liu, T. Chen, J. Wan, G. P. Ru, B. Z. Li, X. P. Qu, Appl. Phys. A 94 (2009) 775.
[38]T. W. Jang, H. S. Rhee, B. T. Ahn, J. Vac. Sci. Technol. A 17 (1999) 1031.
[39]Z. L.Wang,“Zinc oxide nanostructures: growth, properties and applications” , J. Phys.: Condens. Matter. 16 (2004) 829.
[40]M. H. Huang, Y. Y. Wu, H. Feick, N. Tran, E. Weber,“Catalytic Growth of Zinc Oxide Nanowires by Vapor Transport”, P.D. Yang, ,Adv. Mater. 13 (2001) 113.
[41]W. I. Park, G.C. yi, J. W. Kim and S.M. Park, “Schottky nanocontacts on ZnO nanorod arrays”Appl Phys Lett. 82 (2003) 4358.
[42]H. D. Yu, Z. P. Zhang, M. Y. Han, X. T. Hao, F. R. Zhu,“A General Low-Temperature Route for Large-Scale Fabrication of Highly Oriented ZnO Nanorod/Nanotube Arrays”J. Am. Chem. Soc. 127 (2005) 2378
[43]J. P. Liu, C. X. Xu, G. P. Zhu, X. Li, Y. P. Cui, Y. Yang and X. W. Sun, “Hydrothermally grown ZnO nanorods on self-source substrate and their field emission”, J. Phys. D: Appl. Phys. 40 (2007) 1906
[44]F. Li, Z. Li, F. J. Jin,“Fabrication and characterization of ZnO micro and nanostnictures prepared by thermal evaporation”, Physica, B 403 (2008) 664.
[45]R. S. Wagner and W. C. Ellis,“Growth of silicon nanowires via gold/silane vapor–liquid–solid reaction” ,Appl. Phys. Lett. 4 (1964) 89.
[46]J. Westwater, D. P. Gosain, S. Tomiya, S. Usui and H. Ruda,“Growth of silicon nanowires via gold/silane vapor–liquid–solid reaction” ,J. Vac. Sci. Technol. B 15 (1997) 554.
[47]A. M. Morales and C. M. Lieber, “A Laser Ablation Method for the Synthesis of Crystalline Semiconductor Nanowires”, (1998) Science 279 208.
[48]P. X. Gao and Z. L. Wang,“Self-Assembled Nanowire−Nanoribbon Junction Arrays of ZnO ” J. Phys. Chem. B 106 (2002) 12653.
[49]S. R. Niranjan, K. Subannajui, R. Grimm, R. Michiels, and M. Zacharias , “Reactive VLS and the Reversible Switching between VS and VLS Growth Modes for ZnONanowire Growth” , J. Phys. Chem. C (2010), 114, 10323–10329.
[50]W. I. Park, D. H. Kim, S. W. Jung and G. C. Yi, “Metalorganic vapor-phase epitaxial growth of vertically well-aligned ZnO nanorods”, Appl. Phys. Lett. 80 (2002) 4232.
[51]W. I. Park, G. Kim, M. Pennycook, S. L,“ZnO Nanoneedles Grown Vertically on Si Substrates by Non-Catalytic Vapor-Phase Epitaxy”, Adv. Mater. 14 (2002) 1841.
[52]J. J. You, Y. M. Yeh,“Large area ZnO films and nanorods arrys by electrodeposition”, Journal of Technology, Vol. 24, No. 3, (2009), pp. 191-196.
[53]G. He, K. Wang, “The super hydrophobicity of ZnO nanorods fabricated by electrochemical deposition method”, Applied Surface Science. 257 (2011) 6590.
[54]I. Mora-Seró, F. Fabragat-Santiago, B. Denier, J. Bisquert, R. Tena-Zaera, J. Elias and C. Lévy-Clément, “Determination of carrier density of ZnO nanowires by electrochemical techniques”, Appl. Phys. Lett. 89 (2006) 203117.
[55]R. A. Laudise and A. A. Ballman, “Hydrothermal Synthesis of Zinc Oxide And Zinc Sulfide”, J. Phys. Chem. 64 (1960) 688.
[56]L. Vayssieres, “Growth of Arrayed Nanorods and Nanowires of ZnO from Aqueous Solutions,” Adv. Mater. 15 (2003) 464.
[57]S. Yamabi and H. Imai , “Growth conditions for wurtzite zinc oxide films in aqueous solutions,”J.Mater. Chem. 12(2002)3773.
[58]A. Samra , J. S. Morris , S. R. Koirtyohann Anal. Chem. , (1975) ,47 (8) :1475.
[59]R. Gedye, F. Smith, K. Westaway, H. Ali, L. Balderisa,L. Laberge and J. Rousell, “The use of microwave ovens for rapid organic synthesis”, Tetrahedron Lett. 27 (1986) 279.
[60]D. R. Baghurst, A. M. Chippindale and D. M. P. Mingos, “Microwave syntheses for superconducting ceramics”, Nature. 332 (1988) 311.
[61]D. R. Baghurst, D. M. P. Mingos, “Application of microwave heating techniques for the synthesis of solid state inorganic compounds”, J. Chem. Soc., Chem. Commun. 12 (1988) 829.
[62]C. M. Chen, M. Chen*, F. C. Leu, S.Y. Hsu, S.C. Wang, S.C. Shi, C.F. Chen, ”Purification of Multi-walled Carbon Nanotubes by microwave digestion method“, Diamond and Relat. Mater. 13 (2004) 1182.
[63]M. Chen; C. M. Chen; H. W. Yu; S. C. Lu; H. S. Koo;”Rapidly dispersion and loading of Pt nanoparticles on CNTs for DMFC electrodesNanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International 24-27 March 2008 Page(s):948 - 953 (EI).
[64]M. Chen, S. C. Lu, H. W. Yu,” Characterization of Microwave Polyol synthesized Pt-Ru nanoparticles supported on purified Carbon Nanotube”,TACT 2009 International Thin Films Conference, December 14-16, 2009.Taipei, Taiwan.
[65]羅正忠、張鼎張，半導體製程技術導論，培生教育出版(2002)
[66]莊嘉琛，太陽能工程-太陽電池篇，全華書局(2007)
[67]D. M Chapin, C. S. Fuller and G. L Pearson,“A new silicon p-n junction photocell for converting solar radiation into electrical power”, J. Appl. Phys.8 (1954) 676.
[68]C. W. Tang,“Two-layer organic photovoltaic cell”,Appl.Phys.Lett. 48 (1986) 83.
[69]洪偉修,“世界上最薄的材料-石墨烯”,98康熹化學學報. 康熹文化事業股份有限公司. 2009-11, 11月號.
[70]K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S.V. Dubonos, I. V. Grigorieva, &; A. A. Firsov. ,“Electric Field Effect in Atomically Thin Carbon Films”,Science 306, 666-669 (2004).
[71]C. Lee, X. Wei, J. W. Kysar and J. Hone,“Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene”,Science. 2008, 321 (5887): 385.
[72]R. R. Nair, P. Blake, A. N. Grigorenko, K. S. Novoselov, T. J. Booth, T. Stauber N. M. R. Peres, A. K. Geim1,“Fine Structure Constant Defines Visual Transparency of Graphene”, Science. 2008, 320 (5881): 1308.
[73]B. Z. Jang, C. G. Liu, D. Neff, Z. Yu, M. C. Wang, W. Xiong, and A. Zhamu, Nano Lett., 11, 3785(2011).
[74]Y. Zhu, S. Murali, M. D. Stoller, K. J. Ganesh, W. Cai, P. J. Ferreira, D. Su, E. A. Stach and R. S. Ruoff ,“Carbon-based supercapacitors produced by activation of graphene”, Science, 332, 1537(2011).
[75]F. Yavari, Z. Chen, A. V. Thomas, W. Ren, H. M. Cheng and N. Koratkar , “High sensitivity gas detection using a macroscopic three-dimensional graphene foam network”,Scientific Reports, 1, 166(2011).
[76]S. Bae, Kim H, Y. Lee, X. Xu, J. S. Park, Y. Zheng, J. Balakishan, T. Lei, H. R. Kim, Y. I. Song, Y. J. Kim , K. S. Kim, B. Ozyilmaz, J. H. Ahn, B. H. Hong and S. Iijima, Nat. Nanotechnol. 5, 574 (2010).
[77]J. H. Kim, E. Joseph, D. Castro, Y. G. Hwang and C. H. Lee,“Synthesis of Few-layer Graphene on a Ni Substrate by Using DC Plasma Enhanced Chemical Vapor Deposition (PE-CVD)”, Journal of the Korean Physical Society, Vol. 58, No. 1, January 2011, pp. 53-57.
[78]劉興鑑, 孫逸民, 陳玉舜, 趙敏勳, 謝明學, 儀器分析, 威全圖書(2007)
[79]S. Major, S. Kumar, M. Bhatnagar, and K. L. Chopra,“Effect of hydrogen plasma treatment on transparent conducting oxides”, Appl. Phys. Lett. Vol. 49 ,NO. 7, (1986) ,. pp.394-396.
[80]林慶誠,“以微波水熱法快速成長氧化鋅奈米柱之特性探討與應用”,(2011).
[81]S. Kishwar , K. ul Hasan, N. H. Alvi, P. Klason, O. Nur, M. Willander, “A comparative study of the electrodeposition and the aqueous chemical growth techniques for the utilization of ZnO nanorods on p-GaN for white light emitting diodes” ,Superlattices and Microstructures.49 (2011) 32-42.
[82]H. Ghayour , H. R. Rezaie , Sh. Mirdamadi, A. A. Nourbakhsh,“The effect of seed layer thickness on alignment and morphology of ZnO nanorods”, Vacuum 86 (2011) 101-105.
[83]S. R. Hejazi, H. R. Madaah Hosseini,“A diffusion-controlled kinetic model for growth of Au-catalyzed ZnO nanorods: Theory and experiment”, Journal of Crystal Growth 309 (2007) 70–75.
[84]J. Huang, C. Xia, L. Cao, X. Zeng,“Facile microwave hydrothermal synthesis of zinc oxide one-dimensional nanostructure with three-dimensional morphology”, Materials Science and Engineering B 150 (2008) 187–193.
[85]Q. Li, J. Bian, J. Sun, J. Wang, Y. Luo, K. Sun and D. Yu,“Controllable growth of well-aligned ZnO nanorod arrays by low-temperature wet chemical bath deposition method”, Appl. Surf. Sci. 256 (2010) 1698.
[86]M. Chen, X. Wang, Y. H. Yu, Z. L. Pei, X. D. Bai, C.Sun, R.F.Huang, L.S.Wen,“X-ray photoelectron spectroscopy and auger electron spectroscopy studies of Al-doped ZnO film”,Appl. Surf .Sci 158(2000),134-140.
[87]W. M. Kwok, A. B. Djurisic, Y. H. Leung, D. Li, K. H. Tam, D. L. Philips and W.K. Chan,“Influence of annealing on stimulated emission in ZnO nanorods”, Appl. Phys. Lett. 89 (2006) 183112.
[88]R. Xie, T. Sekiguchi, T. Ishigaki, N. Ohashi, D. Li, D. Yang, B. Liu and Y. Bando, “Enhancement and patterning of ultraviolet emission in ZnO with an electron bean”,Appl. Phys. Lett 88 (2006) 134103.
[89]L. Miao, Y. Ieda, S. Tanemura, Y.G. Cao, M. Tanemura, Y. Hayashi, S. Toh, K. Kaneko,“Synthesis, microstructure and photoluminescence of well-aligned ZnO nanorods on Si substrate”, Science and Technology of Advanced Materials 8 (2007) 443.
[90]H. Horiuchi, R. Katoh, K. Hara, M. Yanagida, S. Murata, H. Arakawa, and M. Tachiya, 2003, “Electroninjection efficiency form excited N3 into nanocrystalline ZnO films：effect of (N3-Zn2+) aggregate formation”,J. Phys. Chem. B, Vol.107,pp. 2570-2574.
[91]陳盈慧、張尚義、鄭鈺霖、鄧顯仕、曾宏智、呂仰欽、黃岱彥、陳密,“改質奈米碳管添加於二氧化鈦薄膜之特性探討”,真空年會(2011).