臺灣博碩士論文加值系統

隨著半導體產業蓬勃發展，溫度感測器亦由傳統的白金測溫電阻、熱敏電阻等大測溫元件邁入了積體電路的世界。在IC式溫度感測器的架構中，輸入端通常需要一個穩定不隨溫度改變的參考電壓與一個正比絕對溫度PTAT(Proportional to absolute temperature)電壓，之後接上類比數位轉換器ADC轉成數位訊號，再進行數位訊號處理做各種不同的應用。本論文使用雙載子電晶體(bipolar transistor)做為溫度感測的單元，以一個極簡單的電路即可同時實現一穩定的參考電壓與一高溫度敏感度PTAT電壓訊號，如此一來後方ADC對解析度(resolution)的要求將不那麼嚴苛。本晶片透過國家晶片設計中心，以TSMC 2P4M 0.35μm CMOS標準製程來實現，並針對-20℃~125℃進行實際晶片量測，功能正常，PTAT電壓之平均溫度敏感度可達6.67 mV/℃，參考電壓斜率變化為 -0.13 mV/℃，整體電路操作在3.3 V，消耗功率169 μW，核心晶片面積為290 X 220 μm2。

第一章 緒論
1-1 相關研究發展 …………………………………………………………………….1
1-2 研究動機 ………………………………………………………………………….3
1-3 論文組織 ………………………………………………………………………….7
第二章 雙載子電晶體型式溫度感測器
2-1 雙載子電晶體基-射極接面溫度特性推導 ………………………………………8
2-2 ∆V_BE-based溫度感測器原理 ………………………………………………….11
第三章 電路架構原理與設計
3-1 金氧半電晶體之溫度特性 ………………………………………………………13
3-2 電路設計流程說明 ………………………………………………………………14
3-2-1 參考電壓設計 ……………………………………………………………….14
3-2-2 高敏感度PTAT設計 ………………………………………………………..17
第四章 電路模擬與佈局考量
4-1 設計目標 …………………………………………………………………………21
4-2 模擬結果 …………………………………………………………………………22
4-2-1 系統模擬結果(Pre-simulation) ……………………………………………....22
4-2-2 系統模擬結果(Post-simulation) ……………………………………………..24
4-2-3 啟動電路模擬 ……………………………………………………………….27
4-3 佈局考量 …………………………………………………………………………29
4-3-1 席貝克效應 ………………………………………………………………….29
4-3-2 電阻與雙載子接面電晶體佈局 …………………………………………….31
4-3-3 整體佈局 …………………………………………………………………….32
第五章 量測環境與結果分析
5-1 量測儀器介紹 ……………………………………………………………………34
5-2 量測封裝考量 ……………………………………………………………………35
5-3 量測環境設定 ……………………………………………………………………37
5-4 量測結果 …………………………………………………………………………40
5-5 量測分析與討論 …………………………………………………………………59
5-6 文獻比較 …………………………………………………………………………65
第六章 結論與後續研究建議
6-1 結論 ………………………………………………………………………70
6-2 後續研究建議 ……………………………………………………………………70

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