臺灣博碩士論文加值系統

本論文研究以等效電路模型法作一維及二維的元件和電路的混階模
擬(mixed-level simulation) o 所謂等效電路模型法,就是將傳統用來描
述元件載子傳輸的擴散模型(drift-diffusion model)轉換成等效電路模
型 o 如此一來, 元件模擬變成了電路模擬, 不但可用電路模擬器來做元
件模擬, 而且可以和一般電路結合, 形成混階模擬 o 首先, 我們先推導
一維的等效電路模型, 然後裝入我們自己的電路模擬器中, 並以二極體切
換電路為例子作混階模擬探討因少數載子儲存效應(minority-carrier-
storage effect)所造成的延遲時間 o 接下來是二維模型的推導與應用,
這些應用包括了如歐姆性接點元件, 蕭基性接點元件以及SOS(
semiconductor-oxide-semiconductor)和金氧半結構元件等的混階模擬 o
最後, 我們將此等效電路模型裝入HSPICE以證明此方法的可行性, 同時討
論其優缺點 o 此方法有助於我們更深入了解元件或製程參數對電路特性
的影響,以及元件在實際電路所造成的動態邊界條件(dynamic boundary
conditions)下的特性變化 o

This thesis presents an equivalent circuit approach for
one-and two-dimensional numerical mixed-level device and circuit
simulation. In such an equivalent circuit approach, Poisson's
andContinuity equations are formulated into a subcircuit format
suitablefor general circuit simulators. Different from
conventional approaches,our approach is conceptually simple and
the extension of this model tothree-dimensional semiconductor
simulation is just straightforward. It'salso easy to implement
this model in many existing circuit enivornmentssuch as HSPICE.
The utility of this new model in mixed-level simulationis
demonstrated by applying to our own circuit simulator and
HSPICE.Various applications such as PN diode switching circuit,
SOS test circuit,MESFET, and MOSFET are taken as examples to
verify the proposed algorithm.By the use of this technique, it's
helpful for us to investigate the interactions between
semiconductor devices and the circuits in whichthey are embedded
from physical point of view.