臺灣博碩士論文加值系統

本研究利用磁控濺鍍的方式將氧化鋅鋁(AZO)沉積在聚對苯二甲酸乙二酯(PET)基板上，並在鍍製薄膜時使用自行設計之可改變底材鍍膜角度的治具進行，其中傾斜角度定義為離子束方向與垂直於PET基板方向之間的角度，可改變的傾斜角度分別為0°、15°、30°、45°、60°。當薄膜鍍製在軟性基板上時，容易因外力的彎曲或拉伸使表面產生裂紋而造成薄膜產生破壞，利用自行設計之彎曲試驗機對薄膜進行彎曲試驗。
本實驗利用壓電力顯微鏡、霍爾效應分析儀量測薄膜之電性，使用橢圓偏光儀、分光光譜儀系統量測其光學性質，以奈米壓痕試驗機量測其機械性質，用X光繞射儀、雙束型聚交離子束觀察薄膜結晶特性並分析其結構，用化學分析電子光譜儀、微光激發光譜儀分析薄膜之品質，討論不同傾斜角與不同彎曲條件對氧化鋅鋁薄膜各個性質的影響。
當薄膜因循環彎曲使電阻上升10%時可視為薄膜發生疲勞破壞，傾斜角0°、15°、30°、45°、60°之電阻上升10%時所對應的循環數分別為589、584、581、576、565。當各試片趨近疲勞破壞之循環數時，光、電性質有很明顯的變化，如穿透率在波長450nm之後有明顯得下降；彎曲後由於殘留應力的增加，使得壓電常數有明顯得下降。
氧缺陷之含量是影響薄膜機械、材料、光學、電性質的重要因子。當傾斜角度增加時，氧缺陷含量、鋁氧鍵結比上升，而鋅氧鍵結比下降；氧缺陷含量的增加會使薄膜在(002)結晶方向之強度比下降，即(103)結晶方向之強度比增加，同時也會增加薄膜內之殘留應力，殘留應力的提升會抑制薄膜的彎曲疲勞壽命和壓電常數。孔隙率與氧缺陷是影響薄膜電性的重要因子，孔隙率與氧缺陷的上升會導致電阻率下降和載子遷移率上升。在非 傾斜角之情況下，薄膜之穿透率和微光激發分析中的三個峰值(紫外光、綠光、紅光)強度會上升。

A flat plate in the deposition stage is designed to have a flexible tilt angle and thus form a variable inclination angle between the ion beam and the direction normal to a PET substrate. Five kinds of inclination angle, 0°, 15°, 30°, 45° and 60° were used to prepare the PET/aluminum-doped zinc oxide specimens in order to examine the effects of the inclination angle and the number of bending cycles on several parameters including the O2-peak intensity ratio (IRO2) from the Electron spectroscopy for chemical analysis, which is identified to be one of the controlling factors in the determinations of electrical, optical, piezoelectric and mechanical properties.
The effects of inclination angle on IRO2 and the effects of IRO2 on the parameters of the volume fractions of IRZnO(002) and IRZnO(103) from XRD analyses, the composite grain size and the residual stress in the thin film are investigated systematically. Increases in the inclination angle can raise the IRO2 value; they also reduce the peak intensity, IRZnO. A rise in IRO2 can reduce the volume fraction of IRZnO(002) but raise the residual stress of thin film; it is favorable for the lowering of the composite grain size. The combination of gComposite increase and IRO2 decrease has resulted in an electrical resistivity increase and a carrier mobility decrease. An increase in the residual stress has reduced the fatigue life of bending specimen and the piezoelectric coefficient. The uses of nonzero inclination angle create favorable conditions to raise the transmittance integration over the wavelengths of visible light and the intensities of the three peaks in the photoluminescence spectrum.

摘要 I
Extended Abstract III
致謝 VI
目錄 VII
表目錄 XII
圖目錄 XIV
第一章 緒論 1
1.1 前言 1
1.2 文獻回顧 3
1.3 研究動機 6
1.4 研究架構8
第二章 基本理論 9
2.1 AZO材料特性 9
2.1.1 晶體結構 9
2.1.2 光學性質 9
2.1.3 導電性質 10
2.2 壓電原理 10
2.2.1 壓電效應 10
2.2.2 壓電方程式 11
2.2.3 壓電力顯微鏡原理 17
2.3 殘留應力理論 18
2.3.1 殘留應力簡介 18
2.3.2 殘留應力理論分析 19
2.3.3 晶粒大小理論分析 21
2.4 儀器理論 22
2.4.1 磁控濺鍍原理 22
2.4.2 橢圓偏振原理 23
2.4.3 光學原理 28
2.4.4 霍爾量測原理 30
2.4.5 光電效應 31
2.4.6 光激發光原理 33
第三章 實驗規劃 40
3.1 實驗目的 40
3.2 實驗設備與方法 41
3.2.1 磁控濺鍍機(Magnetron Sputter) 41
3.2.2 可調傾斜角度載具(Adjustable Tilt Angle Holder) 42
3.2.3 彎曲試驗機(Bending Tester) 42
3.2.4 數位電表(Digital Multimeter ) 42
3.2.5 壓電力顯微鏡(Piezoresponse Force Microscopy) 43
3.2.6 橢圓偏光儀(Spectroscopic Ellipsometer) 44
3.2.7 分光光譜儀(Spectrophotometer) 44
3.2.8 奈米壓痕試驗機(Nano Indentation Tester) 45
3.2.9 霍爾效應分析儀(Hall Effect Analyzer) 45
3.2.10 X光繞射儀(X-ray Diffractometer) 46
3.2.11 雙束型聚交離子束(Dual Beam-Focused Ion Beam) 47
3.2.12 化學分析電子光譜儀(Electron Spectroscopy for Chemical Analysis) 47
3.2.13 微光激發光譜儀( Micro-PL Spectrometer) 48
3.3 實驗流程 49
3.3.1 試片製備流程 49
3.3.2 試片檢測 50
第四章 結果與討論 62
4.1 不同彎曲條件之結果 62
4.1.1 結構分析 62
4.1.1.1 XRD分析 62
4.1.1.2 晶粒大小分析 63
4.1.1.3 殘留應力分析 63
4.1.1.4 FIB 64
4.1.1.5 楊氏模數與硬度分析 64
4.1.2 成分分析 65
4.1.3 光學特性分析 67
4.1.3.1 穿透率分析 67
4.1.3.2 能隙值分析 68
4.1.3.3 孔隙率分析 68
4.1.3.4 折射率與消光係數分析 69
4.1.4 光激發光譜分析 69
4.1.5 電性分析 70
4.1.5.1 電阻分析 70
4.1.5.2 霍爾量測分析 70
4.1.5.3 壓電常數分析 71
4.2各性質之相互影響 72
第五章 結論與未來展望 117
5.1 結論 117
5.2 未來展望 118
參考文獻 119

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