臺灣博碩士論文加值系統

本文將呈現以CMOS-MEMS技術製作的熱電式真空計，其中CMOS-MEMS技術具有低成本，易與電路整合等優勢。本研究之熱電真空計具有二種不同懸浮結構，利用<100>單晶矽異向性蝕刻使結構懸浮，懸浮結構分別為長支腳低熱導結構(TP401)和短支腳高熱導結構(TP402)，並針對此二種結構進行量測。其中真空量測以電調控量測架構抑制雜訊能力優於一般直流量測架構。
量測分別有熱導量測、熱電訊號輸出量測、熱時間常數和真空量測。熱導量測使用直流功率供給加熱器，利用功率與溫差換算出熱導，TP401和TP402熱導分別約73.83uW/K和79.2uW/K。熱電訊號輸出量測亦是直流功率2.5mW供給加熱器其熱電訊號均約為13mV。熱時間常數量測是使用不同頻率紅外線照射元件並推得出常壓環境元件時間常數約15ms，真空環境元件時間常數約220ms。真空量測是由低壓往常壓回壓並分別記錄不同壓力下的熱電訊號，使用直流量測真空與電調控量測真空，直流量測架構其熱電輸出訊號跳動約8-10mV，而電調控量測真空架構，熱電輸出訊號跳動低於0.3mV，抑制雜訊效果佳。電調控量測架構中的電源頻率稍高，則真空量測(低壓往常壓回壓)將會產生熱電訊號先升後降的異常現象，利用暫態熱傳導理論驗證其原因為元件時間常數隨壓力下降而增加導致跟不上電源頻率緣故。

This paper presents the measurement and the fabrication of thermocouple vacuum sensors fabricated by a low cost CMOS process and MEMS technology. The thermocouple vacuum sensors have two types of suspended structures with different solid thermal conductance. The vacuum sensor with shorter supporting leads and larger solid conductance was named TP401 and the other one was TP402. Each suspended structure was formed by using <100> silicon anisotropic etching process after the CMOS process and has a polysilicon heater and an aluminum/polysilicon thermocouple pair. The polysilicon heater also serves as a thermistor temperature sensor. The performances of the sensors were characterized in this work. Furthermore, an AC electrical modulation method using a lock-in amplifier was adopted for improving the signal-to-noise ratio of the measurement of the sensors.
The thermal conductance of TP401 and TP402 were evaluated as 73.83uW/K and 79.2uW/K according to the ratio of bias heating power to temperature difference between the hot junction and the cold junction of the thermocouple. The thermocouple output voltage was about 13mV as the power of heater was 2.5mW. The thermal time constants of these sensors were also figured out by adopting the measurement of infrared frequency response of the thermocouple vacuum sensors in air and in vacuum respectively. The measurement results show that the thermal time constants of TP402 were 15ms and 220ms at atmospheric pressure and in vacuum environment respectively. The pressure response measurement of the vacuum sensors using DC bias will result in an 8-10mV voltage fluctuation and lower the signal-to-noise ratio. The signal fluctuation could be improved to 0.3mV by using an AC electrical modulation.

摘要 i
Abstract ii
致謝 iv
目錄 v
表目錄 vii
圖目錄 viii
第一章 緒論 1
1.1研究動機 1
1.2真空與真空計的定義與應用 3
1.3文獻回顧 7
1.4論文架構 13
第二章 基礎理論 14
2.1熱傳導理論 14
2.1.1固體熱導Gs(Solid thermal conductance) 14
2.1.2氣體熱導Gg(Gas thermal conductance) 18
2.1.3輻射熱導Gr(Radiation Conductance) 21
2.2熱電理論 22
2.2.1席貝克效應(Seebeck effect) 22
2.2.2帕爾帖效應(Pelitier effect) 24
2.2.3湯姆森效應(Thomson effect) 25
2.2.4熱電優值(Figure of merit) 25
2.3熱電偶式真空計理論 26
2.4暫態熱傳導 28
第三章 元件製作 32
3.1元件製程簡介 32
3.2蝕刻製程 35
3.3元件打線與封裝 36
第四章 真空計量測與分析 37
4.1元件特性量測 37
4.1.1電阻溫度係數(TCR)量測 37
4.1.2元件熱導量測與估算 39
4.1.3熱電偶輸出訊號量測 42
4.2頻率響應 43
4.2.1量測儀器介紹 43
4.2.2常壓環境 44
4.2.2真空環境 45
4.3真空量測 46
4.3.1直流量測真空 46
4.3.2電調控量測真空 48
4.3.3固定壓力之直流量測真空 56
第五章 結論與未來展望 57
5.1結論 57
5.2未來展望 58
參考文獻 59

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