[1] P. Bergveld, “Development of an ion-sensitive solid state device for neuro-physiological measurements”, IEEE Trans. Biomed.Eng., BME-17, pp. 70-71, 1970
[2] O. Leistiko, “The selectivity and temperature characteristic of ion sensitive field effect transistors”, Phys. Scr., 18, pp. 445-450, 1978
[3] M. Esashi and T. Matsuo, “Integrated Micro Multi Ion Sensor Using Field Effect of Semiconductor”, IEEE Trans. on Biomedical Engineering, BME-25, pp. 184-192, 1978
[4] M. Chen, “Electrochemical impedance spectroscopy study of Ta2O5 based EIOS pH sensors in acid environment”, Sensors and Actuators B: Chemical. B 192, pp. 399– 405, 2014
[5] J.-C. Chou and C.-Y. Weng, “Sensitivity and hysteresis effect in Al2O3 gate pH-ISFET Materials chemistry and physics”, Elsevier, Volume 71, Issue 2, Pages 120–124, 2001
[6] Y. Vlasov, et al, “Investigation of pH-sensitive ISFETs with oxideand nitride membranes using colloid chemistry methods, Sensors and Actuators: B. Chemical”, Elsevier, pp. 357-360, 1990
[7] C.-S. Lai, C.-M. Yang and T.-F. Lu, “pH sensitivity improvement on 8 nm thick hafnium oxide by post deposition annealing”, Electrochemical and solid-state letters, Volume 9, Issue 3, pp. G90-G92, 2006
[8] C.-S. Lai, C.-M. Yang and T.-F. Lu, “Thickness Effects on pH Response of HfO2 Sensing Dielectric Improved by Rapid Thermal Annealing”, Japanese Journal of Applied Physics, vol.45, Issue 4B, pp. 3807, 2006
[9] Y. Mourzina, T. Mai, A. Poghossian, Y. Ermolenko, T. Yoshinobu, Y. Vlasov, H. Iwasaki and M.J. Schoning, “K+-selective field-effect sensors as transducers for bioelectronic applications”, Electrochim. Acta, vol. 48, pp. 3333-3339, 2003
[10] D. N. Reinhoudt, et al, “Development of Durable K+-Selective Chemically Modified Field Effect Transistors with Functionalized Polysiloxane Membranes”, Anal. Chem. 66, pp. 3618-3623, 1994
[11] Z.M. Baccar, et al, “ K+-ISFET type micro sensors fabricated by ion implantation”, Mater. Chem. Phys. vol. 48, pp. 56-59 1997
[12] T.Ito, et al, “ISFET's with Ion-Sensitive Membranes Fabricated by Ion Implantation”, IEEE Transaction on Electron Devices, vol. ED-35, NO.1, January, 1988
[13] M. T. Pham and W. Hoffmann, “Ion-sensitive membranes fabricated by the ion-beam technique”, Sensors and Actuators, vol. 5,Issue 3, pp. 217-228, 1984
[14] P. Bergveld and A. Sibbald, “Analytical and Biomedical Applications of Ion-Selective Field-Effect Transistors”, Wilson and Wilson’s Comprehensive Analytical Chemistry, 1987
[15] W. M. Siu and R. S. C. Cobbold, “Basic Properties of the Electrolyte-SiO2-Si System: Physical and Theoretical Aspects”, IEEE Transactions on Electron Device, vol. ED-26, NO. 11, Nov. 1979
[16] V. A. Matylitskaya, W. Bock and B. O. Kolbesen, “Nitridation of niobium oxide films by rapid thermal processing”, Anal Bioanal Chem 390:1507-1515, 2008
[17] 薛守助,“金屬閘極與高介電層界面製程對高功函數閘極金氧半元件之電特性影響”,清華大學, 碩士論文, 2012[18] 盧佳暐,“利用直流電非平衡磁控濺鍍系統製備氮化鈦鋯薄膜結構與性質之研究”,清華大學, 碩士論文, 2012[19] W. Bunjongpru, “Very low drift and high sensitivity of nanocrystal-TiO2 sensing membrane on pH-ISFET fabricated by CMOS compatible process”, Applied Surface Science 267, 206-211, 2013
[20] T. M. Pan and J. C. Lin, “Effects of Post-Deposition Annealing and Oxygen Content on the Structural and pH-Sensitive Properties of Thin Nd2O3 Films”, IEEE Sens. J., 9, 1173, 2009
[21] T. M. Pan and K. M. Liao, “Comparison of structural and sensing characteristics of Pr2O3 and PrTiO3 sensing membrane for pH-ISFET application ”, Sens. Actuators B, 133, 97, 2008
[22] T.-M. Pan and K.-M. Liao, “Structural and Sensing Properties of High-k PrTiO3 Sensing Membranes for pH-ISFET Applications”, IEEE Trans Biomed Eng, 56, 471, 2009
[23] T.-M. Pan, “Thin Sm2TiO5 Film Electrolyte Insulator Semiconductor for pH Detection and Urea Biosensing”, Journal of The Electrochemical Society, 157 (8) J275-J280 ,2010
[24] 江資聞, “Ion selectivity Improvements of Niobium oxide by phase Modification”, 長庚大學, 碩士論文, 2013
[25] K. Nomura, et al, “Amorphous oxide semiconductors for high-performance flexiblethin-film transistors”, Japanese Journal of Applied Physics, vol. 45, pp. 4303-4308, 2006
[26] T. Zednicek, S. Zednicek and Z. Sita, “Niobium Oxide Technology Roadmap”, AVX Czech Republic s.r.o.
[27] E. Gusev, “Defects in High-k Gate Dielectric Stacks Mathematics”, Physics and Chemistry, Vol. 220, 2006
[28] P. Bergveld, R. E. G. van Hal and J. C. T. Eijkel, “The remarkable similarity between the acid-base properties of ISFETs and proteins and the consequences for the design of ISFET biosensors”, biosensors &; bioelectronics 10, pp. 405-414, 1995
[29] T. -M. Pan, et al, “Structural and Sensing Properties of High-k Lu2O3 Electrolyte-Insulator-Semiconductor pH Sensors”, Manuscript submitted November 3, 2010; revised manuscript received December 13, 2010. Published February 11, 2011
[30] T. M. Pan and K. M. Liao, “Structural properties and sensing characteristics of Y2O3 sensing membrane for pH-ISFET”, Sens. Actuators B, 127, 480, 2007
[31] T. M. Pan, J. C. Lin, M. H. Wu and C. S. Lai, “Study of high-k Er2O3 thin layers as ISFET sensitive insulator surface for pH detection”, Sens. Actuators B, 138, 619, 2009
[32] T. M. Pan and K. M. Liao, “Development of a High-k Pr2O3 Sensing Membrane for pH-ISFET Application”, IEEE Sens. J., 8, 1856, 2008
[33] S.-C. Wang, “Single Si3N4 Layer on Dual Substrate for pH Sensing Micro Sensor”, SAS 2009 – IEEE Sensors Applications Symposium New Orleans, LA, USA - February 17-19, 2009
[34] C.-M. Yang, “Drift and Hysteresis Effects Improved by RTA Treatment on Hafnium Oxide in pH-Sensitive Applications”, Journal of The Electrochemical Society, 155, pp. J326-J330, 2008
[35] 楊家銘, “ISFET/REFET with Inorganic and Organic Ion-sensitive Membranes”, 長庚大學, 博士論文, 2005
[36] 呂增富, “氮化及氟化氧化鉿薄膜感測特性探討”, 長庚大學, 碩士論文, 2005[37] 呂增富, “具可程式化結構與高介電感測薄膜之離子感測電晶體於生物感測之應用”, 長庚大學, 博士論文, 2010[38] P.-K. Shina and T. Mikolajickb, “Alkali- and hydrogen ion sensing properties of LPCVD silicon oxynitride thin films”, Elsevier, accepted 14 ,January, 232-237, 2003
[39] L.-T. Yin, “Characteristics of Silicon Nitride after O2 Plasma Surface Treatment for pH-ISFET Applications”, IEEE Transactions on Biomedical Engineering, vol. 48, NO. 3, MARCH, 2001
[40] P.-K. Shina, “K ion sensing properties of sodium and aluminum coimplanted LPCVD silicon oxynitride thin films”, Applied Surface Science 207, pp. 351–358, 2003
[41] B. Hajji, “pH、pK and pNa detection properties of SiO2/Si3N4 ISFET chemical sensors”, Microelectronics Reliability 40, 783±786, 2000
[42] J. C. Chou, “Study on the amorphous tungsten trioxide ion-sensitive field effect Transistor” Sensors and Actuators B 66, pp. 106–108, 2000
[43] 楊宏熙, “二氧化鈦薄膜之延伸式閘極場效電晶體特性分析與應用於微機電系統技術之研究”,雲林科大, 碩士論文, 2006[44] 蔣境昇, “1x4 線性陣列式酸鹼離子感測器之研製”, 中原大學, 碩士論文, 1992[45] 鄭筱瑄, “酵素固定化之研究與釕生物感測器之研製”, 雲林科技大學, 碩士論文, 1996[46] Naresh K and Pentaa, “Role of hydrogen bonding on the adsorption of several amino acids on SiO2 and Si3N4 and selective polishing of these materials using ceria dispersions”, Colloids and Surfaces A: Physicochem. Eng. Aspects 429, pp. 67–73, 2013
[47] T.-F. Lu and H.-C. Chuang, “ Effects of Thickness Effect and Rapid Thermal Annealing on pH Sensing Characteristics of Thin HfO2 Films Formed by Atomic Layer Deposition”, Japanese Journal of Applied Physics 50, 10PG03, 2011
[48] T.-M. Pan, “Thin Sm2TiO5 Film Electrolyte Insulator-Semiconductor for pH Detection and Urea Biosensing”, Journal of The Electrochemical Society, 157-8, J275-J280, 2010
[49] M. Chen, “Electrochemical impedance spectroscopy study of Ta2O5 based EIOS pH sensors in acid environment”, Sensors and Actuators B 192, pp. 399– 405, 2014
[50] 廖鴻仁, “鈦介層對於氮氧化鈦薄膜之相轉變與其相關性質的影響”, 清華大學, 碩士論文, 1998[51] 馮俊傑, “Study on a home care system based on multi-biosensor”,中原大學, 碩士論文, 1996