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研究生:馮念中
研究生(外文):Nina-Jhong Fong
論文名稱:利用垂直Bridgman法成長Ge1-xSnxTe(x=0,0.8,0.9,1)晶體與其性質分析
論文名稱(外文):Characterization of Ge1-xSnxTe (x=0,0.8,0.9,1)Alloy Grown by Vertical Bridgman Method
指導教授:吳慶成
指導教授(外文):Cing-Cheng Wu
學位類別:碩士
校院名稱:國立東華大學
系所名稱:材料科學與工程學系
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:2006
畢業學年度:94
語文別:中文
論文頁數:77
中文關鍵詞:拉曼光譜霍爾量測熱電布里茲曼
外文關鍵詞:BridgmanthermoelectricRamanHall measurement.
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本論文以垂直式布里茲曼(Vertical Bridgman method)法成長Ge1-xSnxTe(x=0,0.8,0.9,1)晶體,以X-ray繞射(XRD)分析材料的結晶性、以金相顯微分析和掃瞄式電子顯微鏡(SEM)觀察材料的表面型態、以電子探針顯微分析儀(EPMA)鑑定材料的組成及利用拉曼光譜(Raman Spectroscopy)鑑定材料長晶品質。樣品是在高真空之可控溫腔體,量測溫度範圍50∼400K,進行Seebeck係數、電阻率、熱傳導係數量測討論其ZT值,並在室溫下進行霍爾量測以了解霍爾遷移率及載子濃度。本論文將討論Ge1-xSnxTe(x=0,0.8,0.9,1)晶體熱電性質和溫度、不同成分下之間的關係。
In this study, Ge1-xSnxTe(x=0,0.8,0.9,1) crystals have been grown by vertical Bridgman method. The crystallinity and composition were investigated by X-Ray diffraction, SEM , EPMA and Raman spectroscopy techniques. The Seebeck coefficient, thermal conductivity, and resistivity measurement were carried out between 50K and 400K. The Hall measurement were completed at room temperature. The Figure of merit (ZT) for these semiconductor alloys were determined from these experimental results. The composition and temperature dependence of the thermoelectric properties for Ge1-xSnxTe(x=0,0.8,0.9,1) crystals were discussed.
摘要……………………………………………Ⅰ
英文摘要………………………………………Ⅱ
目錄……………………………………………Ⅲ
圖目錄…………………………………………Ⅵ
表目錄…………………………………………Ⅸ
一、前言………………………………………1
二、研究背景與理論基礎……………………3
2.1研究背景…………………………………3
2.2 量測理論基礎……….….….…………6
2.2.1 Seebeck效應………………….……6
2.2.2熱傳導.………..……………………9
2.2.3電學性質……………………………10
2.2.4 熱電材料的物理性質………………13
2.2.5霍爾效應...........….……………15
2.2.6 拉曼光譜………………………………………………19
三、實驗方法與步驟………………………………………………….22
3.1實驗流程…………………………………………………….21
3.2晶體成長….…………………………………………………22
3.2.1材料之製備.......….…………………………………22
3.2.2鍍碳膜與封管……………………………………………22
3.2.3 垂直布里茲曼晶體(Bridgman)成長系統…………………….26
3.3結晶品質分析…………………………………………………31
3.3.1 X-Ray繞射分析…….……………………………………31
3.3.2掃描式電子顯微分......…..…………………………32
3.3.3電子微探儀分析…………….……………………………32
3.3.4拉曼光譜...............……………….………………33
3.4熱電特性量測…………………………………………………34
3.4.1量測系統………………………………….……….………34
3.4.2實驗控制程式…………………………………………….35
3.4.3電阻率量測………………………………………………38
3.4.4 Seebeck係數量測………………………………………..40
3.4.5熱傳導率量測………..…………………………………..42
3.4.6霍爾效應量測………….…………………………………44
四、實驗結果與討論……………………………………………47
4.1晶體品質分析..…………………………..……………….47
4.1.1晶體外觀…………………………………..……………47
4.1.2金相與SEM結果分析………………………..………49
4.1.3 EPMA結果分析..………………………………………49
4.1.4 X-Ray繞射結果分析..………………………….………53
4.1.5 拉曼光譜分析..………………………………………56
4.2熱電特性結果分析………………………………………58
4.2.1 Seebeck係數……………………………………………58
4.2.2熱傳導係數……………………………………………62
4.2.3電阻率………………………………………………….66
4.2.4 ZT值…….….…………………………………………70
4.2.4霍爾量測……...………………………………………71
五、結論………………………………………………………72
參考資料………………………………………………………74
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