|
1. Dieter K. Schroder, “Semiconductor material and device characterization”, 1990. 2. A. C. Beer,“Hall effect and the beauty and challenges of science, The Hall Effect andIts Applications”, 299- 303 (1980). 3. Peschany carier, 109383 Moscow, Russia, “SCTBNORD” Joint Stock Company p.3,(1999) 4. R. Dingle, W. Wiegman, and C. H. Henry, Phys. Rev. Lett. 33, 827 (1974). 5. C. Weisbuch, R. C. Miller, R. Dingle, A.C. Gossard, and W.Wiegmann, Solid State Commu. 37, 219 (1981). 6. F. Bassni and G. P. Parravicini, Electric State and Opitical Transition in Solid andD. E. Aspnes, in L. Peraldo Bicelli, J. Appl. Phys. 62, 4523-4527 (1987). 7. X. Yin, X. Guo, F. H. Pollak and G. D. Petitt, J. M. Woodall, T. P.Chen and C. W.Tu, Appl. Phys. Lett. 60, 1336-1338 (1992). 8. 張鼎正、張顏暉 科儀新知第十四卷第四期 82.2 9. Thaddeusb. B . Massalski , Sinary Alloy(second edition) phase diagrams v2 2009(1996.5). 10.V.llars,P./Prince,Alan,/Okamoto.H./ASM International Society , Handbook of ternary alloy phase diagrams. 11622-11623. 11.Thaddeusb. B . Massalski ,Sinary Alloy(second edition) phase diagrams v3 3402(1996.5). 12.Seebeck, T. J., Magnetic polarization of metals and minerals, Abhandlungen der Deutschen Akademie Wissenschaften zu Berlin, 265 (1823). 13.Pollock, D. D.,Thermoelectricity:theory, Thermometry, tool,ASTM Special Technical Publication 852, American Society for Testing and Materials, Philadelphia, PA, 1985. 14.D.M.Rowe, CRC handbook of thermoelectrics, 1-131(1995). 15.Seebeck, T. J., Uber deen magnetismus der gavenische kette, Abh. K. Akad. Wiss. Berlin, 289 (1821). 16.Seebeck, T. J., Ann. Phys. (Leipzig)[2], 6,1(1826) 17.Seebeck, T. J., Methode, Platinatiegel auf ihr chemische reinheit durck thermomagnetismus zu prufen, Sschweigger`s J.Phys.,46,101(1826). 18.李雅明,【固態電子學】,91-121,235-257 (1997). 19.H.J.Goldsmid, “Electronic Refrigeration”, 1-194 (1986). 20.David Jiles, “Introduction to the Electronic Properties of Materials”, 46-48(1995). 21.Gerald Mahan, Brian Sales, and Jeff Sharp, Physics Today, March 1997,42 (1997). 22.N.Scoville, C.Bajgar, J.P.Fleurial, and J.Vandersande, Thermal conductivity reduction in SiGe alloys by the addition of nanophase particles, NanoStuctured Materials, Vol. 5, No 2, pp.207-223, 1995. 23.孫允武, 物理雙月刊(二十一卷二期), p261-270, 1999年 四月. 24.Koji Yano and Takashi Katoda, J. Appl. Phys. 70, 7036 (1991). 25.D. P. Bour, J. R. Shealy, A. Ksendzov and Fred Pollak, J. Appl. Phys. 64,6456(1988). 26.A. Zalery, S. R. Elliott, J. Non-Cryst.Solids 330, 1-12 (2003). 27.A. Ganjoo, K. Shimakawa, K. Kitano, E. A. Davis, J. Non- Cryst. Solids 299&320, 917-923 (2002). 28.A. V. Kolobov and K. Tanka, “Handbook of advanced electronic and photonic materials and devices”, 5, 47 (Academic Press, San Diego, (2001). 29.A. Ganjoo, N. Yoshida, K. Shimakawa, Recent Res. Dev. Appl. Phys. 2, 129 (1999). 30.A. C. Beer, Hall effect and the beauty and challenges of science, The Hall Effect and Its Applications, pp.299-303, 1980. 31.藍崇文、姜智豪,結晶成長概述-塊晶生長”,第46卷,第二 期,化工(1999) 32.Dieter K. Schroder, Semiconductor material and device characterization, 2rd ed., Wiley-Interscience, New York, 1998. 33.R. A. Laudise, The Growth of Single Crystal, Prentice- Hall, Inc. p.41. 34.吳泰伯,儀器總覽-材料分析儀器,國科會精儀中心,5,1 (2003). 35.J.I.Goldstein et al."Scanning Electron Microscopy and X- ray Microanalysis", 3rd Ed. (Plenum Press, 2003). 36.江建志,劉大釗,儀器總覽-化學分析儀器,國科會精儀中心, 26 (2003). 37.何清華, 二硫化鐵之單經成長與特性研究, 國立台灣工業技術學 院工程技術研究所電子工程技術學程, 民國80年. 38.I. Abdulhalim et al., J. Non-Cryst. Solids 192&193, 482 (1995). 39.D. R. Simons, A. J. Faber, and D. de Waal, Opt.Lett. 20, 468 (1995). 40.Y. Ohishi, M. Yamada, A. Mori, T. Kanamori, M. Shomizu, and S. Sudo, Opt. Lett. 20, 382 (1995). 41.邱聖育,Bi2Te3基熱電致冷材料之粉末冶金製程,國立台灣科技大 學材料科學與工程研究所,1985. 42.L. E. Shelimova , X-RAY diffraction study and electrical and thermal transport properties of nGeTe﹒ mBi2Te3 homologous serises compounds. P6, 2001. 43.E. I . Rogacheva. Oscillations in thickness dependences of room temperature Seebeck Coefficient in SnTe thin films.P2, 2005. 44.R.M.Vlasova,andL,S.Stilbands,J.Tech.Phys,Moscow,25,569 , 1955. 45.D.B.Hyun, J.S.Hwang, T.S.Oh, J.D. Shim and N.V.Kolomoets, Electrical properties of the 85﹪Bi2Te3- 15﹪Bi2Se3 thermoelectric material dopen with SbI3 and CuBr, J. Phys. Chem Solids Vol 59, No.6- 7, pp.1039- 1044, 1998. 46.P. H. O. Rappl , Molecular beam epitaxial growth of high quality Pb1-xSnxTe Layers with 01998
|