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研究生:余美鳳
研究生(外文):Mei-Feng YU
論文名稱:以無電鍍法製備氧化亞銅薄膜及其特性分析
論文名稱(外文):Preparation of cuprous oxide thin film by Electroless Plating Process
指導教授:陳弘穎陳弘穎引用關係
指導教授(外文):Hong-Ying Chen
學位類別:碩士
校院名稱:國立高雄應用科技大學
系所名稱:化學工程與材料工程系
學門:工程學門
學類:化學工程學類
論文種類:學術論文
論文出版年:2009
畢業學年度:97
語文別:中文
論文頁數:73
中文關鍵詞:氧化銅氧化亞銅退火石英微量天平氫氧化鈉關係圖硫酸銅氧化銅混合液
外文關鍵詞:copper、cupric oxide、cuprous oxide、annealing、quartz crystal microbalanceAND
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本研究係以不同的溶液配方及浸鍍方式,利用無電鍍法,成功地在ITO試片上浸鍍出氧化亞銅薄膜。
我們發現以硫酸銅與硫代硫酸鈉當做鍍液,直接在ITO試片浸鍍後會產生氧化銅的薄膜,即使再經過退火其結果並無明顯的不同;改用A(硫酸銅與硫代硫酸鈉混合液)和B溶液(氫氧化鈉溶液)交互浸鍍的方式,會有氧化亞銅薄膜的產生且隨著浸鍍的次數增加氧化亞銅薄膜的厚度亦會增加,其穿透度亦會下降。在研究過程中發現固定試片的材質對浸鍍成膜的速度會有差異,但對形成氧化亞銅薄膜的結果並無影響。
最佳的結果是使用硫酸銅、酒石酸鉀鈉與甲醛混合液(配方五)進行浸鍍時,在pH12.9以上,浸鍍時間在5hr以上可成功的在ITO試片上浸鍍出氧化亞銅薄膜,並利用QCM與浸鍍時間的關係圖 ∆m=f (t) 觀察氧化亞銅薄膜的成長情況。
In this study, the electroless plating with different solutions is applied to fabricate the cuprous oxide film on ITO.The cupric oxide films would be formed while the solution consisting of copper(II) sulfate (CuSO4) and sodium thiosulfate (Na2S2O3) was used. The microstructure was retained after annealing. The cuprous oxide films would be formed by alternative dipping between A solution (CuSO4 and Na2S2O3) and B solution (NaOH ). The thickness of cuprous oxide films monotonically increased with dipping times, but the transmittance of the films would be decreased. The clip materials which were used to fix the sample would significantly influence the deposition rate of cuprous oxide films.
The best dipping condition of cuprous oxide films on ITO substrates comes out when we use the solution consisting of CuSO4, NaKC4H4O6, and formaldehyde mixture above pH12.9 and 5 hours dipping time. The growth of cuprous oxide films could be monitored by quartz crystal microbalance as a function of growth time.
中文摘要………………………………….……………………………..I
ABSTRACT………………………………………………...…………..II
誌 謝…………………………………………………………………III
總目錄…………………………………………………….…………..…IV
表目錄………………………………………………………..……..….VIII
圖目錄………………………………………………………………..….IX
第一章 前言……………………………………….……………….……1
1-1 銅及其氧化物簡介………………………………….…….……1
1-1-1銅………………….…..………………………….…….…….1
1-1-2氧化銅…………….……………………………..…….….….1
1-1-3氧化亞銅………….…………………………..…..…………2
1-2 研究動機………………………………………….….………….4
1-3 研究目的.................................................................…..................5
第二章 文獻回顧……………..……………………………………….6
2-1 氧化亞銅的製備方法………………...………………….…...6
2-1-1 無電鍍法........................................................................…...6
2-2 浸漬法………………………………......................…...............8
2-3 氧化亞銅薄膜與石英晶體振盪器(quartz crystal microbalance,QCM)……………………………………………………..………9
2-3-1 目的……………………………………………………….......9
2-3-2原理…………………………………..………………………...9
第三章 實驗方法...................................................................................12
3-1 實驗流程圖…………………………………………………....12
3-2 銅薄膜的製備…………………………………………………..13
3-2-1 ITO試片前處理……………………………………..…...…13
3-2-2氧化亞銅薄膜之製備……………………………………....13
3-2-3 實驗藥品……………………………….. ……………….....15
3-2-4製備銅薄膜實驗流程圖……………….. ……………….....16
3-3 退火………………………………………………………….....18
3-4 石英微量天平實驗………………………………………….…20
3-4-1溶液成分(配方五) ……..……………………………….…20
3-4-2 反應式………………….……………………………….…20
3-5微結構分析………………….……………………………….…21
3-5-1 X光繞射分析…………………………....………………...21
3-6 光學性質分析……………………………………………….....22
3-6-1 紫外光/可見光吸收光譜..…...………………...…………22
3-7 電阻分析…...……………….……………….……...………....23
3-8 熱針………………………………………….……...………...23
第四章 實驗結果……………………………………………………...25
4-1 X光繞射分析………….…………………………………..…25
4-1-1 X光繞射分析- 配方一…………………………….….....25
4-1-2 X光繞射分析 - 配方二…………………………..…..…28
4-1-3 X光繞射分析 - 配方三…………………………..……..30
4-1-4 X光繞射分析 - 配方四……………………………..…..33
4-1-5 X光繞射分析 - 配方五………………………………....34
4-2 光學性質分析.…………………………….……………...……37
4-2-1 紫外光 / 可見光吸收光譜…………....………………..….37
4-3電阻與載子類型分析……………….……….….………......….39
4-4石英微天平分析……………….…………….……….....…..….41
第五章 結論..…………………………....…………….……....…...…46
參考文獻................................................................................................48
附錄I溶液調整pH值及自製石英微量天平…..………………........53
附錄II硫酸銅與酒石酸鉀鈉的添加量比較過程……………….…..58


表目錄
表1-1銅、氧化銅和氧化亞銅物理化學性質…………………………3
表3-1 實驗藥品規格與廠商.................................................................15
表4-1 不同配方下晶體結構................................................................40
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