臺灣博碩士論文加值系統

鍺錫半導體已經是四族主動元件的主要材料，在這論文中，利用快速熱熔磊晶法在矽基板上製作鍺錫金半金漸變式光偵測器，利用快速熱熔磊晶法可以製作出3~4%的鍺錫合金。
利用SAD和EDS方法分別分析錫在條狀鍺的晶體結構和濃度分布，由分析結果可以發現利用快速熱熔磊晶法製作出的鍺錫合金為單晶結構，而且結晶品質良好。此外，透過拉曼頻譜分析，同樣分析出單晶的鍺錫合金，並且得到錫在鍺錫合金中的濃度分布。最後，透過量測元件光電響應及光導電性的公式，求得錫在金屬電極下的濃度分布。

Germanium-Tin (GeSn) semiconductor alloy has been considered as a candidate for implementing active Group IV optoelectronics. In this thesis, a Ge1-xSnx metal-semiconductor-metal (MSM) photodetector fabricated on Si substrate by rapid melt growth method with graded Sn concentration up to 5-10 %, which is higher than the solid solubility (~ 1 %) of Sn in Ge is demonstrated.
The crystal orientation and elemental composition of the GeSn alloy are characterized by selected area diffraction (SAD) pattern and energy dispersion spectroscopy (EDS), showing a monocrystalline semiconductor quality and Sn concentration profile. This crystal quality of GeSn alloy is also investigated by Raman spectroscopy. Finally, we measure the photocurrent of the device and verify the GeSn MSM photodetector has a mid-IR photoresponse at wavelength of 2 μm.

Abstract i
ACKNOWLEDGEMENT ii
TABLE OF CONTENTS iii
List of Figures v
List of Tables xii
CHAPTER 1: Introduction 1
1.1 Motivation and Background 1
1.2 Thesis Organization 7
CHAPTER 2: Introduction of GeSn photodetectors 8
2.1 SiGeSn Material Characteristics and Applications 8
2.2 SiGe waveguides 9
2.3 GeSn photodetectors 12
2.4 Rapid Melt Growth Method (RMG) 17
2.4.1 RMG process of SiGe 20
2.4.2 Applications of GeSn by RMG process 23
2.4.3 Scheil’s Equation for the RMG method 28
2.5 Metal-Semiconductor-Metal Photodetectors 30
CHAPTER 3: Device Design and Fabrication 35
3.1 Device Design 35
3.2 Simulation of Extinction Coefficients 38
3.2.1 SiyGe1-y 39
3.2.2 Ge1-xSnx 41
3.3 Optical Loss with inter-layers of different materials below strips 43
3.4 Fabrication Process 45
CHAPTER 4: Experimental Results 51
4.1 TEM Analysis 51
4.2 Micro-Raman Spectroscopy 55
4.3 I-V Characteristics 60
4.3.1 The Dark Current and Photocurrent 61
4.3.2 Photoresponse for different Sn concentration 62
CHAPTER 5: Conclusion &; Future Work 70
Reference 73
APPENDIX A. Runcard and Recipes 77

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