臺灣博碩士論文加值系統

本研究成功的將微機電技術與微波電路理論做一完美的結合，以創新的理論設計與製作出了兩種工作頻率在30GHz 的等相位微波衰減器---穿透式與反射式等相位衰減器，並以微機電技術製作出電容式微波開關與等相位微波衰減器，以微機電的方法製作高頻開關與衰減器不但面積小且性能優異，價格也會比化合物半導體便宜，擁有大量生產的利基。
傳統上高頻元件的製作皆以砷化鎵為基板的主要材料，本研究採用高阻值的矽晶圓為基板材料，利用此法不但高頻性能不受影響且可將製作成本降低。
訊號在改變振幅時相位不變是通訊系統上一個極重要的需求，本文所設計的穿透式衰減器乃利用相位補償的方法使訊號能在衰減過程中保持等相位；而反射式衰減器則巧妙的利用九十度耦合器的特性使訊號的相位誤差能夠在輸出端互相消去以保持相位不變，只須改變電阻值就能有不同的衰減振幅，在電路的模擬上採用HFSS和Microwave office兩套軟體，以前者模擬三維結構體之S參數，並利用後者粹取出等效電路以驗証所設計的元件。
在製程上，採用溼式蝕刻法將開關釋放以降低元件製作的時間，增加了批次量產的可能性，並將衰減器與電容式開關的製程做一整合，使製作開關的過程中只須多一道光罩即可將衰減器完成。

After successfully combining MEMS technology with microwave theorem , this thesis develops the new ideals and fabricates two kinds of attenuator with constant phase at 30GHz－transmission type and reflection type constant phase attenuator. This thesis uses MEMS technique to fabricate the microwave capacitive switch and attenuators. These devices that are fabricated by MEMS techniques are not only small area but also outstanding performance. Their costs are cheaper than semiconductor devices and have the opportunities of mass production.
Unlike conventional high frequency microwave devices that take GaAs as the substrate material, this thesis uses high resistivity silicon wafer as the substrate material. High frequency devices with using this processes method are not only unrestricted performance but also cost down.
Constant phase is an extreme important demand of the communication system, this thesis uses phase compensation method in transmission type attenuator and error canceling method in reflection type attenuator to achieve the goals, respectively. This thesis skillfully uses the quadrature coupler to cancel signal phase errors at output port and can gets differential attenuations as long as changes resistances. In the circuit simulation, this thesis uses HFSS and Microwave office to simulate S parameters of 3-D devices and extracts the devices model respectively.
In the processes, this thesis introduces wet-etching to release the structures. This method can decrease the time of the devices fabrication and increase possibility of mass production. This thesis also integrates the processes of the attenuators and capacitive switches, it only needs a additional mask before completing microwave capacitive switch.

中文摘要………………………………………………………………………..i
英文摘要………………………………………………………………………iii
誌謝……………………………………………………………………………iv
目錄…………………………………………………………………………….v
圖表列………………………………………………………………………...vii
第一章 緒論………………………………………………………………….1
1.1 前言…………………………………………………………………..1
1.2 研究動機……………………………………………………………..3
1.3 文獻回顧……………………………………………………………..5
1.3.1 電容式微波開關……………………………………………...5
1.3.2 等相位微波衰減器…………………………………………...6
1.4 章節提要……………………………………………………………..9
第二章 電容式微機電微波開關…………………………………………...10
2.1 設計流程……………………………………………………………10
2.2 微波開關操作原理…………………………………………………11
2.3 開關模擬……………………………………………………………14
2.3.1 驅動電壓的模擬…………………………………………….14
2.3.2 高頻參數模擬與粹取……………………………………….15
2.4 製程設計……………………………………………………………17
2.4.1 光罩設計…………………………………………………….17
2.4.2 電鍍原理…………………………………………………….18
2.4.3 製作流程…………………………………………………….19
2.5 開關量測與結果分析………………………………………………27
2.5.1 驅動電壓之量測…………………………………………….27
2.5.2 暫態響應之量測…………………………………………….28
2.5.3 S參數之量測………………………………………………29
2.5.4 參數粹取與計算…………………………………………….32
2.6 結論…………………………………………………………………34
第三章 穿透式等相位衰減器……………………………………………...35
3.1 傳統衰減器之缺點…………………………………………………35
3.2 衰減器的功用………………………………………………………37
3.3 理論推導……………………………………………………………41
3.4 電路模擬……………………………………………………………44
3.5 製程設計與考量……………………………………………………49
3.5.1 光罩設計…………………………………………………….49
3.5.2 實驗流程……………………………………………………49
3.6 量測結果與討論…………………………………………………...53
3.7 結論………………………………………………………………...56
第四章 反射式等相位衰減器……………………………………………..57
4.1 理論推導………………………………………………………….57
4.1.1 九十度耦合器的原理……………………………………..57
4.1.2反射式等相位衰減器之原理……………………………….59
4.2 電路模擬………………………………………………………….61
4.3 製程設計與考量…………………………………………………...64
4.3.1 光罩設計…………………………………………………..64
4.3.2 製作流程…………………………………………………..65
4.4 實驗結果…………………………………………………………...68
4.5 討論………………………………………………………………...69
第五章 結論與未來展望…………………………………………………..70
5.1 總結………………………………………………………………...70
5.2 改良方式…………………………………………………………...71
5.2.1 降低驅動電壓………………………………………………71
5.2.2 改善開關與衰減器之高頻性能……………………………71
5.3 未來展望…………………………………………………………...73
參考文獻……………………………………………………………………..74

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